STW57N65M5-4

STW57N65M5-4 N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package Datasheet − production data Features Order code VDS @ TJmax RDS(on) max ID STW57N65M5-4 710 V 0.063 Ω 42 A • Higher VDS rating 2 • Higher dv/dt capability 4 3 • Excellent switching performance thanks to the extra driving source pin 1 TO247-4 • Easy to drive • 100% avalanche tested Figure 1. Internal schematic diagram Drain(1) Applications • High efficiency switching applications: – Servers – PV inverters – Telecom infrastructure – Multi kW battery chargers Gate(4) Description Driver source(3) Power source(2) AM10177v1 This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STW57N65M5-4 57N65M5 TO247-4 Tube June 2013 This is information on a product in full production. DocID024559 Rev 2 1/14 www.st.com 14 Contents STW57N65M5-4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 9 DocID024559 Rev 2 STW57N65M5-4 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 42 A ID Drain current (continuous) at TC = 100 °C 26.5 A IDM (1) Drain current (pulsed) 168 A PTOT Total dissipation at TC = 25 °C 250 W 11 A 960 mJ dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) 50 V/ns - 55 to 150 °C 150 °C Value Unit 0.50 °C/W 50 °C/W VGS Parameter IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Tstg Tj MOSFET dv/dt ruggedness Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 42 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V 3. VDS ≤ 520 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID024559 Rev 2 3/14 Electrical characteristics 2 STW57N65M5-4 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 21 A resistance Unit 650 V 1 100 µA µA ± 100 nA 4 5 V 0.056 0.063 Ω Min. Typ. Max. Unit - 4200 - pF - 115 - pF - 9 - pF VGS = ± 25 V VGS(th) Max. 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 303 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 93 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.3 - Ω Qg Total gate charge - 98 - nC Qgs Gate-source charge - 23 - nC Qgd Gate-drain charge VDD = 520 V, ID = 21 A, VGS = 10 V (see Figure 16) - 40 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/14 DocID024559 Rev 2 STW57N65M5-4 Electrical characteristics Table 6. Switching times Symbol Parameter td(V) Voltage delay time tr(V) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 28 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) (see Figure 20) Crossing time Min. Typ. Max. Unit - 79 - ns - 9 - ns - 8 - ns - 14 - ns Min. Typ. Table 7. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 42 A ISDM (1) Source-drain current (pulsed) - 168 A VSD (2) Forward on voltage - 1.5 V ISD ISD = 42 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 42 A, di/dt = 100 A/µs VDD = 100 V (see Figure 17) ISD = 42 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 17) - 418 ns - 8 µC - 40 A - 528 ns - 12 µC - 44 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024559 Rev 2 5/14 Electrical characteristics 2.1 STW57N65M5-4 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM14705v1 ID (A) 100 s ai re n) s a DS(o i th R in ax n io by m t a er ted Op imi L 10 10μs 100μs 1ms 10ms Tj=150°C Tc=25°C 1 Single pulse 0.1 10 1 0.1 VDS(V) 100 Figure 4. Output characteristics Figure 5. Transfer characteristics AM14706v1 ID (A) VGS= 9, 10 V 100 AM14707v1 ID (A) VDS= 25 V 100 VGS= 8 V 80 80 VGS= 7 V 60 60 40 40 VGS= 6 V 20 0 4 0 16 12 8 20 0 VDS(V) Figure 6. Gate charge vs gate-source voltage AM14708v1 VGS (V) VDS (V) 500 VDD=520V 10 ID=21A VDS 8 400 6 300 4 200 2 100 3 4 5 6 7 8 9 VGS(V) Figure 7. Static drain-source on-resistance AM14709v1 RDS(on) (Ω) 0.062 VGS=10V 0.060 0.058 0.056 0 0 6/14 20 40 60 80 0 100 Qg(nC) 0.054 0.052 0.05 DocID024559 Rev 2 0 10 20 30 ID(A) STW57N65M5-4 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM14710v1 C (pF) AM14711v1 Eoss (μJ) 18 16 10000 Ciss 14 1000 12 10 100 8 Coss 6 10 4 Crss 2 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM04972v1 VGS(th) (norm) 0 0 VDS(V) 100 400 200 300 500 600 VDS(V) Figure 11. Normalized on-resistance vs temperature AM05501v2 RDS(on) (norm) ID=250μA 2.1 1.10 ID= 21 A 1.9 VGS= 10 V 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04974v1 VSD (V) 0.5 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 13. Normalized VDS vs temperature AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 0.6 TJ=150°C 1.00 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 DocID024559 Rev 2 0 25 50 75 100 TJ(°C) 7/14 Electrical characteristics STW57N65M5-4 Figure 14. Switching losses vs gate resistance (1) AM11171v1 E (µJ) 800 Eon 700 600 500 400 Eoff 300 200 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode. 8/14 DocID024559 Rev 2 STW57N65M5-4 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 mF 2200 RL mF IG=CONST VDD VGS RG 100Ω Vi=20V=VGMAX VD 2200 mF D.U.T. PW D.U.T. VG 2.7kΩ 47kΩ GND1 (driver signal) GND2 (power) 1kΩ PW GND1 AM15855v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM15856v1 Figure 18. Unclamped inductive load test circuit A D G GND2 L D.U.T. FAST DIODE B B L=100mH S B D 25 W 3.3 mF VD 1000 mF 2200 mF VDD 3.3 mF VDD ID G S RG Vi GND2 GND1 D.U.T. Pw GND1 AM15857v1 Figure 19. Unclamped inductive waveform V(BR)DSS GND2 AM15858v1 Figure 20. Switching time waveform &RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII ,G VD 9GV ,G 7GHOD\RII RII IDM 9JV 9JV RQ ID 9JV,W  VDD VDD ,G 9GV 9GV 7ULVH AM01472v1 DocID024559 Rev 2 7IDOO 7FU RVV RYHU  $0Y 9/14 Package mechanical data 4 STW57N65M5-4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/14 DocID024559 Rev 2 STW57N65M5-4 Package mechanical data Table 8. TO247-4 mechanical data mm. Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 1.29 1.20 P1 1.25 7.40 P2 2.40 Q 5.60 S 2.50 2.60 6.00 6.15 T 9.80 10.20 U 6.00 6.40 DocID024559 Rev 2 11/14 Package mechanical data STW57N65M5-4 Figure 21. TO247-4 drawing B$ 12/14 DocID024559 Rev 2 STW57N65M5-4 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 17-Apr-2013 1 First release. 28-Jun-2013 2 – Modified: Figure 1, 15, 16, 17, 18 – Minor text changes DocID024559 Rev 2 13/14 STW57N65M5-4 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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