STW58N60DM2AG

STW58N60DM2AG Automotive-grade N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW58N60DM2AG 600 V 0.060 Ω 50 A 360 W  3   2 1     TO-247 Figure 1: Internal schematic diagram D(2) Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. G(1) S(3) AM15572v1_no_tab Table 1: Device summary July 2015 Order code Marking Package Packing STW58N60DM2AG 58N60DM2 TO-247 Tube DocID027912 Rev 2 This is information on a product in full production. 1/12 www.st.com Contents STW58N60DM2AG Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ...................................................................................... 8 4 Package information ........................................................................ 9 4.1 5 2/12 TO-247 package information ............................................................. 9 Revision history .............................................................................. 11 DocID027912 Rev 2 STW58N60DM2AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 50 Drain current (continuous) at Tcase = 100 °C 31 IDM(1) Drain current (pulsed) 200 A PTOT W VGS ID Parameter Total dissipation at Tcase = 25 °C 360 dv/dt (2) Peak diode recovery voltage slope 50 dv/dt (3) MOSFET dv/dt ruggedness 50 Tstg Tj Storage temperature Operating junction temperature -55 to 150 A V/ns °C Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 50 A, di/dt=800 A/μs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value 0.35 50 Unit °C/W Table 4: Avalanche characteristics Symbol IAS (1) (2) EAS Parameter Value Unit Avalanche current, repetitive or not repetitive 12 A Single pulse avalanche energy 800 mJ Notes: (1) (2) Pulse width limited by Tjmax. starting Tj = 25 °C, ID = IAS, VDD = 50 V. DocID027912 Rev 2 3/12 Electrical characteristics 2 STW58N60DM2AG Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 10 VGS = 0 V, VDS = 600 V, Tcase = 125 °C 100 Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 25 A 0.052 0.060 Ω Min. Typ. Max. Unit - 4100 - - 190 - - 3.2 - IDSS Zero gate voltage drain current IGSS 3 µA Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 325 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.2 - Ω Qg Total gate charge - 90 - - 18 - - 44 - Min. Typ. Max. - 24 - - 60 - - 130 - - 12 - VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 480 V, ID = 50 A, VGS = 10 V (see Figure 15: "Gate charge test circuit") Qgs Gate-source charge Qgd Gate-drain charge pF nC Table 7: Switching times Symbol td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf 4/12 Parameter Test conditions VDD = 300 V, ID = 25 A RG = 4.7 Ω (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform") Fall time DocID027912 Rev 2 Unit ns STW58N60DM2AG Electrical characteristics Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 50 A ISDM Source-drain current (pulsed) - 200 A - 1.6 V VSD(1) Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM VGS = 0 V, ISD = 50 A - 140 ns - 0.7 µC Reverse recovery current - 10.6 A trr Reverse recovery time - 245 ns Qrr Reverse recovery charge - 2.6 µC IRRM Reverse recovery current - 21 A ISD = 50 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") ISD = 50 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID027912 Rev 2 5/12 Electrical characteristics 2.1 STW58N60DM2AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance 6/12 Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID027912 Rev 2 STW58N60DM2AG Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Source- drain diode forward characteristics DocID027912 Rev 2 7/12 Test circuits 3 STW58N60DM2AG Test circuits Figure 14: Switching times test circuit for resistive load Figure 15: Gate charge test circuit Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform 8/12 DocID027912 Rev 2 STW58N60DM2AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 package information Figure 20: TO-247 package outline DocID027912 Rev 2 9/12 Package information STW58N60DM2AG Table 9: TO-247 package mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/12 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID027912 Rev 2 3.65 5.50 5.50 5.70 STW58N60DM2AG 5 Revision history Revision history Table 10: Document revision history Date Revision Changes 12-Jun-2015 1 First release. 20-Jul-2015 2 Updated title and features. Minor text changes. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 12/12 DocID027912 Rev 2