STW58N65DM2AG

STW58N65DM2AG Datasheet Automotive-grade N-channel 650 V, 0.058 Ω typ., 48 A, MDmesh™ DM2 Power MOSFET in a TO-247 package Features 1 2 • • • • • • • 3 TO-247 D(2) G(1) Order code VDS RDS(on) max. ID PTOT STW58N65DM2AG 650 V 0.065 Ω 48 A 360 W AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications • Switching applications S(3) NG1D2S3Z Product status link Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. STW58N65DM2AG Product summary Order code STW58N65DM2AG Marking 58N65DM2 Package TO-247 Packing Tube DS11265 - Rev 3 - July 2018 For further information contact your local STMicroelectronics sales office. www.st.com STW58N65DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 48 Drain current (continuous) at Tcase = 100 °C 30 IDM(1) Drain current (pulsed) 150 A PTOT Total dissipation at Tcase = 25 °C 360 W dv/dt(2) Peak diode recovery voltage slope 50 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range VGS ID TJ Parameter Operating junction temperature range A V/ns -55 to 150 °C Value Unit 1. Pulse width is limited by safe operating area. 2. ISD ≤ 48 A, di/dt=800 A/μs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS 3. VDS ≤ 520 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient 0.35 50 °C/W Table 3. Avalanche characteristics Symbol IAR(1) (2) EAS Parameter Avalanche current, repetitive or not repetitive Single pulse avalanche energy Value Unit 7 A 1300 mJ 1. Pulse width is limited by TJmax. 2. Starting TJ = 25 °C, ID = IAR, VDD = 50 V DS11265 - Rev 3 page 2/13 STW58N65DM2AG Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 650 Unit V VGS = 0 V, VDS = 650 V 10 IDSS Zero gate voltage drain current VGS = 0 V, VDS = 650 V, Tcase = 125 °C(1) 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 24 A 0.058 0.065 Ω Min. Typ. Max. Unit - 4100 - - 160 - - 2.5 - 3 µA 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 375 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.1 - Ω Qg Total gate charge VDD = 520 V, ID = 48 A, - 88 - Qgs Gate-source charge VGS = 0 to 10 V - 22 - Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 37 - Qgd VDS = 100 V, f = 1 MHz, VGS = 0 V pF nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Switching times Symbol td(on) tr td(off) tf DS11265 - Rev 3 Parameter Test conditions Min. Typ. Max. Turn-on delay time VDD = 325 V, ID = 24 A, - 28 - Rise time RG = 4.7 Ω, VGS = 10 V - 31 - Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 157 - - 7.7 - Fall time Unit ns page 3/13 STW58N65DM2AG Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM(1) (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 48 A Source-drain current (pulsed) - 150 A 1.6 V Forward on voltage VGS = 0 V, ISD = 48 A - trr Reverse recovery time ISD = 48 A, di/dt = 100 A/µs, - 135 ns Qrr Reverse recovery charge VDD = 100 V - 0.68 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 10 A trr Reverse recovery time ISD = 48 A, di/dt = 100 A/µs, - 260 ns Qrr Reverse recovery charge - 2.75 µC IRRM Reverse recovery current VDD = 100 V, TJ = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 21 A VSD IRRM 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS11265 - Rev 3 page 4/13 STW58N65DM2AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Thermal impedance K GADG270620181145SOA 10 2 TO247EZx8 tp =10 µs Operation in this area is limited by RDS(on) 10 -1 10 1 tp =100 µs Zth=k*Rthj-c 10 0 tp =1 ms Single pulse T j ≤ 150 °C T c = 25°C 10 -1 tp =10 ms 10 -2 10 -1 10 0 10 1 10 2 VDS (V) Figure 3. Output characteristics ID (A) 80 60 60 4 8 12 V GS (V) GIPG090915FQFBWQVG V DS (V) VDD = 520 V, ID = 48 A 12 DS11265 - Rev 3 GIPG090915FQFBWTCH 20 V GS = 5 V 16 V DS (V) Figure 5. Gate charge vs gate-source voltage 600 400 6 300 4 200 2 100 20 0 2 4 6 8 V GS (V) Figure 6. Static drain-source on-resistance R DS(on) (Ω) GIPG090915FQFBWRID V GS = 10 V 0.066 500 V DS 8 0 0 tp (s) 40 V GS = 6 V 20 10 10 -1 100 80 0 0 10 -2 120 V GS = 7 V 40 10 -3 V DS = 20 V 140 V GS = 8 V 100 10 -4 ID (A) V GS = 9,10 V 120 10 -3 10 -5 Figure 4. Transfer characteristics GIPG090915FQFBWOCH 140 10 -2 40 60 80 100 0 Q g (nC) 0.062 0.058 0.054 0.050 0 8 16 24 32 40 I D (A) page 5/13 STW58N65DM2AG Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations C (pF) GIPG090915FQFBWCVR V GS(th) (norm.) 10 4 GIPG090915FQFBWVTH I D = 250 µA 1.1 C ISS 10 1.0 3 C OSS 10 2 0.9 0.8 f = 1 MHz 10 1 10 0 10 -1 10 0 C RSS 10 1 V DS (V) 10 2 Figure 9. Normalized on-resistance vs temperature R DS(on) (norm.) GIPG090915FQFBWRON V GS = 10 V 2.2 0.7 0.6 -75 -25 25 75 125 T j (°C) Figure 10. Normalized V(BR)DSS vs temperature V (BR)DSS (norm.) GIPG090915FQFBWBDV I D = 1 mA 1.12 1.08 1.8 1.04 1.4 1.00 1.0 0.96 0.6 0.2 -75 0.92 -25 25 75 125 T j (°C) Figure 11. Output capacitance stored energy E OSS (µJ) GIPG090915FQFBWEOS 0.88 -75 -25 25 75 V SD (V) GIPG090915FQFBWSDF T j = -50 °C 1.1 20 T j = 25 °C 0.9 16 T j = 150 °C 0.7 12 8 T j (°C) Figure 12. Source- drain diode forward characteristics 28 24 125 0.5 4 0 0 DS11265 - Rev 3 100 200 300 400 500 600 V DS (V) 0.3 0 8 16 24 32 40 I SD (A) page 6/13 STW58N65DM2AG Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS11265 - Rev 3 page 7/13 STW58N65DM2AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS11265 - Rev 3 page 8/13 STW58N65DM2AG TO-247 package information 4.1 TO-247 package information Figure 19. TO-247 package outline 0075325_9 DS11265 - Rev 3 page 9/13 STW58N65DM2AG TO-247 package information Table 8. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS11265 - Rev 3 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 10/13 STW58N65DM2AG Revision history Table 9. Document revision history Date Version 09-Sep-2015 1 15-Sep-2015 2 Changes Initial release. In section Electrical characteristics (curves): - updated figure Safe operating area Removed maturity status indication from cover page. The document status is production data. 02-Jul-2018 3 Updated Table 1. Absolute maximum ratings and Table 7. Source-drain diode. Updated Figure 1. Safe operating area. Minor text changes DS11265 - Rev 3 page 11/13 STW58N65DM2AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS11265 - Rev 3 page 12/13 STW58N65DM2AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS11265 - Rev 3 page 13/13