STW5NA100

STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA T YPE STW5NA100 STH5NA100FI s s s s s s V DSS 1000 V 1000 V R DS(on) < 3.5 Ω < 3.5 Ω ID 4.6 A 2.9 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 3 2 1 3 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW5NA100 V DS VDGR V GS ID ID I DM ( • ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0 ) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 2 5 o C Drain Current (continuous) at T c = 1 00 C Drain Current (pulsed) Total Dissipation at T c = 2 5 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Unit STH5NA100FI V V V 2.9 1.8 18.4 60 0.48 4000 A A A W W/ o C V o o 1000 1000 ± 30 4.6 2.9 18.4 150 1.2  -65 to 150 150 C C 1/6 (•) Pulse width limited by safe operating area October 1997 STW5NA100-STH5NA100FI THERMAL DATA TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOWATT218 2.1 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m ax, δ < 1 %) Single Pulse Avalanche Energy (starting T j = 2 5 o C, I D = I AR , VDD = 5 0 V) Max Value 4.2 160 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A VGS = 0 Min. 1000 50 250 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating Gate-body Leakage Current (V DS = 0 ) V GS = ± 3 0 V T c = 1 00 o C ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 1 0V Test Conditions ID = 2 50 µ A I D = 2 .1 A 4.2 Min. 2.25 Typ. 3 2.9 Max. 3.75 3.5 Unit V Ω Ω A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz I D = 2 .1 A V GS = 0 Min. 2 Typ. 5.5 1650 127 31 2150 165 41 Max. Unit S pF pF pF 2/6 STW5NA100-STH5NA100FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 5 00 V 2.1 A R G = 4 .7 Ω V DD = 8 00 V I D = 4 .2 A ID = V GS = 1 0 V V GS = 1 0 V 59 9.4 26.5 83 nC nC nC Min. Typ. 14 12 Max. 20 16 Unit ns ns SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 8 00 V R G = 4 .7 Ω I D = 4 .2A V GS = 1 0 V Min. Typ. 94 30 142 Max. 132 42 199 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 .2 A I SD = 4 .2 A V DD = 3 0 V V GS = 0 di/dt = 100 A/ µ s o T j = 1 50 C 1000 14 28 Test Conditions Min. Typ. Max. 4.6 18.4 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STW5NA100-STH5NA100FI TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 4/6 STW5NA100-STH5NA100FI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 D1 C D M U F H 123 L1 L4 P025C 5/6 G STW5NA100-STH5NA100FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6