STW5NB100

® STW5NB100 N - CHANNEL 1000V - 4Ω - 4.3A - TO-247 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STW5NB100 s s s s s s s V DSS 1000 V R DS(on) < 4.4 Ω ID 4.3 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot Parameter Drain-source Voltage (V GS = 0 ) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 2 5 C Drain Current (continuous) at T c = 1 00 o C Drain Current (pulsed) Total Dissipation at T c = 2 5 C Derating Factor dv/dt (1) T stg Tj June 1998 Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 1000 1000 ± 30 4.3 2.7 17 160 1.28 4 -65 to 150 150 (1) ISD ≤ 4 Α , di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 (•) Pulse width limited by safe operating area STW5NB100 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.78 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m ax) Single Pulse Avalanche Energy (starting T j = 2 5 o C, I D = I AR , VDD = 5 0 V) Max Value 4.3 373 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A VGS = 0 Min. 1000 1 50 ± 1 00 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating o C Gate-body Leakage Current (V DS = 0 ) V GS = ± 3 0 V T c = 1 25 I GSS ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 1 0 V Test Conditions ID = 2 50 µ A ID = 2 A 4.3 Min. 3 Typ. 4 4 Max. 5 4.4 Unit V Ω A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz ID = 2 A V GS = 0 Min. 1.5 Typ. 3 1400 117 7 1800 152 10 Max. Unit S pF pF pF 2/5 STW5NB100 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 5 00 V R G = 4 .7 Ω ID = 2 A V GS = 1 0 V Min. Typ. 20 9 32 12 11 Max. 28 13 45 Unit ns ns nC nC nC V DD = 8 00 V ID = 4 A V GS = 1 0 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 8 00 V R G = 4 .7 Ω ID = 4 A V GS = 1 0 V Min. Typ. 15 12 20 Max. 21 17 28 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 .3 A I SD = 4 A V DD = 1 00 V V GS = 0 d i/dt = 100 A/ µ s o T j = 1 50 C 750 5.4 14.5 Test Conditions Min. Typ. Max. 4.3 17 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STW5NB100 TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 4/5 STW5NB100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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