STW5NK100Z

STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET Features Type STF5NK100Z STP5NK100Z STW5NK100Z ■ ■ ■ ■ ■ VDSS (@TJMAX) 1000 V 1000 V 1000 V RDS(on)max < 3.7 Ω < 3.7 Ω < 3.7 Ω ID 3 3.5 A 3.5 A 3.5 A TO-220 1 2 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 2 1 3 Applications ■ Switching application Figure 1. Internal schematic diagram D(2) Description The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products. Table 1. Device summary Marking F5NK100Z P5NK100Z W5NK100Z Package TO-220FP TO-220 TO-247 G(1) S(3) AM01476v1 Order code STF5NK100Z STP5NK100Z STW5NK100Z Packaging Tube Tube Tube May 2009 Doc ID 10850 Rev 5 1/15 www.st.com 15 Contents STP5NK100Z, STF5NK100Z, STW5NK100Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM(2) PTOT Absolute maximum ratings Value Parameter TO-220, TO-247 Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 3.5 2.2 14 125 1 4000 4.5 2500 1000 ± 30 3.5 (1) 2.2 (1) 14 (1) 30 0.24 TO-220FP V V A A A W W/°C V V/ns V Unit VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; Tc= 25°C) Operating junction temperature Storage temperature -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 3. Symbol Rthj-case Rthj-a Tl Thermal data Value Parameter TO-220, TO-247 Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1 62.5 300 TO-220FP 4.2 °C/W °C/W °C Unit Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by TJMAX) Single pulse avalanche energy (starting Tj=25 °C, Id=Iar, Vdd=50 V) Doc ID 10850 Rev 5 Value 3.5 250 Unit A mJ 3/15 Electrical characteristics STP5NK100Z, STF5NK100Z, STW5NK100Z 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125 °C Min. 1000 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Gate body leakage current VGS = ± 20 V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100 µA VGS = 10 V, ID = 1.75 A 3 3.75 2.7 4.5 3.7 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2) td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Test conditions Min. Typ. 4 1154 106 21.3 46.8 22.5 7.7 51.5 19 42 7.3 21.7 59 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Forward transconductance VDS =15 V, ID = 1.75 A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge VDS =25 V, f=1 MHz, VGS=0 - VGS=0, VDS =0 V to 800 V VDD=500 V, ID= 1.75 A, RG=4.7 Ω, VGS=10 V (see Figure 21) VDD=800 V, ID = 3.5 A VGS =10 V (see Figure 22) - - - 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Electrical characteristics Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.5 A, VGS=0 ISD= 3.5 A, di/dt = 100 A/µs, VDD=30 V (see Figure 23) ISD= 3.5 A, di/dt = 100 A/µs, VDD=35 V, Tj=150 °C (see Figure 23) Test conditions Min. 605 3.09 10.5 742 4.2 11.2 Typ. Max. 3.5 14 1.6 Unit A A V ns µC A ns µC A - - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V Gate-source breakdown voltage Igs=± 1 mA (open drain) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 10850 Rev 5 5/15 Electrical characteristics STP5NK100Z, STF5NK100Z, STW5NK100Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 10850 Rev 5 7/15 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STP5NK100Z, STF5NK100Z, STW5NK100Z Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVdss vs temperature Figure 18. Maximum avalanche energy vs temperature 8/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Test circuits 3 Test circuits Figure 20. Unclamped inductive waveform Figure 19. Unclamped inductive load test circuit Figure 21. Switching times test circuit for resistive load Figure 22. Gate charge test circuit Figure 23. Test circuit for inductive load switching and diode recovery times Doc ID 10850 Rev 5 9/15 Package mechanical data STP5NK100Z, STF5NK100Z, STW5NK100Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Package mechanical data TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J Doc ID 10850 Rev 5 11/15 Package mechanical data STP5NK100Z, STF5NK100Z, STW5NK100Z TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 12/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S Doc ID 10850 Rev 5 13/15 Revision history STP5NK100Z, STF5NK100Z, STW5NK100Z 5 Revision history Table 9. Date 12-Oct-2004 08-Sep-2005 16-Dec-2005 16-Aug-2006 15-May-2009 Document revision history Revision 1 2 3 4 5 First release Complete datasheet Inserted ecopack indication New template, no content change Modified: Section 2.1: Electrical characteristics (curves) Changes 14/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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