STW60N10

STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 s s s s s s s s V DSS 100 V 100 V 100 V R DS( on) < 0.025 Ω < 0.025 Ω < 0.025 Ω ID 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 2 3 2 TO-218 1 ISOWATT218 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STH/STW60N10 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Unit STH60N10FI V V V 36 22 240 70 0.56 4000 -65 to 150 150 A A A W W/o C V o o 100 100 ± 20 60 42 240 200 1.33  -65 to 175 175 C C (•) Pulse width limited by safe operating area May 1993 1/11 STH60N10/FI STW60N10 THERMAL DATA TO-218/TO-247 ISOWATT218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 0.75 30 0.1 300 1.79 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) o Max Value 60 720 180 37 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VG S = 0 Min. 100 250 1000 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 20 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Conditions ID = 250 µ A T c = 100 o C 60 Min. 2 Typ. 2.9 0.02 Max. 4 0.025 0.05 Unit V Ω Ω A V GS = 10 V I D = 30 A V GS = 10 V ID = 30 A V DS > ID( on) x RD S(on) max V GS = 10 V DYNAMIC Symbol gfs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz I D = 30 A VG S = 0 Min. 25 Typ. 35 4000 1100 250 5000 1400 350 Max. Unit S pF pF pF 2/11 STH60N10/FI STW60N10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 80 V ID = 30 A VGS = 10 V R G = 50 Ω (see test circuit, figure 3) V DD = 80 V ID = 60 A R G = 50 Ω VGS = 10 V (see test circuit, figure 5) V DD = 80 V ID = 30 A V GS = 10 V Min. Typ. 90 270 270 Max. 130 380 Unit ns ns A/ µ s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 120 16 60 170 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 80 V ID = 60 A R G = 50 Ω VGS = 10 V (see test circuit, figure 5) Min. Typ. 200 210 410 Max. 280 290 570 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM( • ) VS D (∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A VG S = 0 180 1 11 I SD = 60 A di/dt = 100 A/µ s T j = 150 o C V DD = 30 V (see test circuit, figure 5) Test Conditions Min. Typ. Max. 60 240 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218 3/11 STH60N10/FI STW60N10 Thermal Impedeance For TO-218 and TO-247 Thermal Impedance For ISOWATT218 Derating Curve For TO-218 and TO-247 Derating Curve For ISOWATT218 Output Characteristics Transfer Characteristics 4/11 STH60N10/FI STW60N10 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/11 STH60N10/FI STW60N10 Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/11 STH60N10/FI STW60N10 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/11 STH60N10/FI STW60N10 TO-247 MECHANICAL DATA mm MIN. A A1 A2 b b1 b2 C D e E L L1 Q ØP 3.05 0.4 20.4 5.43 15.3 15.57 3.7 5.3 3.5 4.3 5.84 3.71 1.5 1 4.7 TYP. MAX. 5.3 2.87 2.5 1.4 2.25 3.43 0.8 21.18 5.47 15.95 0.120 0.015 0.803 0.213 0.602 0.613 0.145 0.208 0.137 0.169 0.230 0.146 0.059 0.039 MIN. 0.185 inch TYP. MAX. 0.208 0.113 0.098 0.055 0.088 0.135 0.031 0.833 0.215 0.628 DIM. A A2 D L Q L1 b1 A1 E 8/11 b2 e ø b C STH60N10/FI STW60N10 TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R Ø – 4 3.95 31 12.2 4.1 – 0.157 0.5 1.1 10.8 14.7 – 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 – 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H Ø F R 1 2 3 P025A G 9/11 STH60N10/FI STW60N10 ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.45 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.017 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 10/11 STH60N10/FI STW60N10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11