STW60N65M5

STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh™ V Power MOSFET in TO-247, TO-3PF Features ■ Order codes VDSS @ TJmax RDS(on) max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A Worldwide best RDS(on) * area amongst the silicon based devices 2 Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested e t e ol ) (s Application Switching applications Description u d o 3 1 TO-247 ■ ) s ( ct 1 s b O Figure 1. Pr 1 TO-3PF Internal schematic diagram t c u $ d o r The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. P e ' t e l o bs 3 O Table 1. !-V Device summary Order codes Marking Package Packaging STFW60N65M5 STW60N65M5 60N65M5 TO-3PF TO-247 Tube May 2011 3 2 Doc ID 18222 Rev 2 1/16 www.st.com 16 Contents STFW60N65M5, STW60N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/16 Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-247 VGS Gate-source voltage TO-3PF ± 25 V ID Drain current (continuous) at TC = 25 °C 46 A ID Drain current (continuous) at TC = 100 °C 29 A Drain current (pulsed) 184 (s) IDM (1) PTOT Total dissipation at TC = 25 °C 255 IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc=25°C) Tstg Storage temperature so )- b O du o r P 1400 e t e l ct 79 12 Peak diode recovery voltage slope VISO Tj A 15 W A mJ V/ns 3500 V - 55 to 150 °C 150 °C Max. operating junction temperature s ( t c 1. Pulse width limited by safe operating area 2. ISD ≤ 46 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS Table 3. u d o Thermal data r P e Symbol s b O t e l o Value Parameter Unit TO-247 TO-3PF 0.49 1.58 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Doc ID 18222 Rev 2 °C/W 3/16 Electrical characteristics 2 STFW60N65M5, STW60N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Co(tr)(1) ete e t e ol Parameter u d o s b O Test conditions )- s ( t c VDS = 100 V, f = 1 MHz, VGS = 0 Equivalent capacitance time related Pr Co(er)(2) VGS = 10 V, ID = 23 A Dynamic Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Equivalent capacitance energy related Min. Typ. Max. Unit 650 V 1 100 µA µA 100 nA 5 V 0.049 0.059 Ω Min. Typ. Max. Unit - 6810 141 6.2 - pF pF pF - 480 - pF - 140 - pF - 1 - Ω - 139 34 52 - nC nC nC ) s ( ct VGS = ± 25 V VGS(th) Symbol b O ID = 1 mA, VGS = 0 IDSS Table 5. l o s Test conditions u d o 3 Pr 4 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 23 A, VGS = 10 V (see Figure 17) 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/16 Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 Table 6. Switching times Symbol td (v) tr (v) tf (i) tc(off) Electrical characteristics Parameter Test conditions Parameter ISD Source-drain current Source-drain current (pulsed) ISDM VSD (2) trr Qrr IRRM trr Qrr IRRM - 90 11 13 16 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol (1) Typ. VDD = 400 V, ID = 30 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) (see Figure 21) Voltage delay time Voltage rise time Current fall time Crossing time Table 7. Min. Test conditions Forward on voltage ISD = 46 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 46 A, di/dt = 100 A/µs VDD = 100 V (see Figure 21) Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 46 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 21) 1. Pulse width limited by safe operating area ) (s ) s ( ct - s b O e t e ol u d o - Pr Max. Unit 46 184 A A 1.5 V - 448 10 45 ns µC A - 534 14 52 ns µC A 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% t c u d o r P e t e l o s b O Doc ID 18222 Rev 2 5/16 Electrical characteristics STFW60N65M5, STW60N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3FP Figure 3. Thermal impedance for TO-3FP AM09126v1 ID (A) TO3PF K Tj=150°C δ=0.5 Tc=25°C Single pulse 100 0.2 a e ar is (o is DS th in ax R ion m at by r e d Op mite Li 10 n) 0.1 10µs 100µs -1 10 0.05 1ms 10ms 0.02 ) s ( ct 0.01 1 Single pulse Figure 4. 10 1 100 10 -5 10 VDS(V) Safe operating area for TO-247 ID (A) 10µs is a s hi e ar ) n (o S t R x in n ma tio y ra d b e e p O mit Li 100µs ct u d o 1 r P e 0.1 0.1 10 1 t e l o Figure 6. s b O ) (s D 100 -1 10 tp (s) r P e Thermal impedance for TO-247 1ms 10ms VDS(V) Figure 7. AM09128v1 VGS=10V 7.5V 7V 120 10 s b O Output characteristics ID (A) 140 -2 -3 10 t e l o Tj=150°C Tc=25°C Single pulse 100 -4 10 Figure 5. AM09127v1 10 u d o -2 0.1 0.1 Transfer characteristics AM09129v1 ID (A) 140 VDS=20V 120 100 6.5V 100 80 80 60 60 6V 40 20 40 20 5.5V 0 0 6/16 2 4 6 8 0 10 12 14 16 18 VDS(V) Doc ID 18222 Rev 2 3 4 5 6 7 8 9 VGS(V) STFW60N65M5, STW60N65M5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM09130v1 VGS (V) VDS 12 VDD=520V ID=23A Static drain-source on resistance AM09131v1 RDS(on) (Ω) VGS=10V 0.057 500 0.055 10 400 0.053 8 0.051 300 6 0.049 200 4 0.047 2 100 0 0 Qg(nC) 100 50 0 150 ) s ( ct 0.045 0.043 0 Figure 10. Capacitance variations 20 10 30 u d o 40 ID(A) Figure 11. Output capacitance stored energy AM09132v1 C (pF) Eoss (µJ) e t e ol 25 10000 Ciss Pr AM09133v1 s b O 20 1000 ) (s Coss 100 t c u 10 1 0.1 od 1 r P e 10 100 t e l o O bs 10 Crss 5 0 0 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature VGS(th) 15 AM09134v1 (norm) 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on resistance vs temperature AM09135v1 RDS(on) (norm) ID=250µA 1.10 2.1 ID=23A 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 -50 -25 0 25 50 75 100 125 TJ(°C) 0.5 -50 -25 Doc ID 18222 Rev 2 0 25 50 75 100 125 TJ(°C) 7/16 Electrical characteristics STFW60N65M5, STW60N65M5 Figure 14. Normalized BVDSS vs temperature Figure 15. Switching losses vs gate resistance (1) AM09136v1 1.07 E (μJ) 800 1.05 700 BVDSS (norm) ID=1mA AM09137v1 Eon ID=30A VDD=400V VGS=10V 600 1.03 Eoff 500 1.01 400 0.99 300 0.97 0.95 100 0.93 -50 -25 0 25 50 75 100 125 0 TJ(°C) 0 10 1. Eon including reverse recovery of a SiC diode e t e ol ) (s s b O t c u d o r P e t e l o s b O 8/16 ) s ( ct 200 Doc ID 18222 Rev 2 du 20 o r P 30 40 RG(Ω) STFW60N65M5, STW60N65M5 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. ) s ( t VG 2.7kΩ c u d PW 47kΩ 1kΩ PW D.U.T. AM01468v1 e t e ol o r P AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B A D G S s ( t c 3.3 μF B 25 Ω D 1000 μF RG S r P e 2200 μF 3.3 μF VDD ID Vi D.U.T. Pw let AM01470v1 Figure 20. Unclamped inductive waveform b O L VD VDD u d o G so )- L=100μH s b O V(BR)DSS AM01471v1 Figure 21. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 18222 Rev 2 Tfall Tcross --over AM05540v2 9/16 Package mechanical data 4 STFW60N65M5, STW60N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 10/16 Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 Table 8. Package mechanical data TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 ) s ( ct 11.50 G1 5.45 H 15.30 L 9.80 L2 22.80 L3 26.30 L4 43.20 L5 4.30 L6 24.30 14.60 du N ro R P e Dia ete 10 ol )- s b O s ( t c L7 du o r P 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 1.80 2.20 3.80 4.20 3.40 3.80 t e l o s b O Doc ID 18222 Rev 2 11/16 Package mechanical data STFW60N65M5, STW60N65M5 Figure 22. TO-3PF drawing L3 L D E A C D1 Dia L2 L6 L7 ) s ( ct F2(3x) F(3x) du G1 H ro P e G R t e l o L5 N s b O L4 ) (s t c u d o r P e t e l o s b O 12/16 Doc ID 18222 Rev 2 7627132_C STFW60N65M5, STW60N65M5 Table 9. Package mechanical data TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 ) s ( ct 15.75 e 5.45 L 14.20 L1 3.70 du ete l o s L2 o r P 14.80 4.30 18.50 ∅P 3.55 ∅R 4.50 )- S b O 3.65 5.50 5.50 s ( t c u d o r P e t e l o s b O Doc ID 18222 Rev 2 13/16 Package mechanical data STFW60N65M5, STW60N65M5 Figure 23. TO-247 drawing ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e 0075325_F t e l o s b O 14/16 Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 15-Nov-2010 1 First release. 05-May-2011 2 Document status promoted from preliminary data to datasheet. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 18222 Rev 2 15/16 STFW60N65M5, STW60N65M5 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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