STW62N65M5

STW62N65M5 Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A MDmesh™ M5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW62N65M5 710 V 0.049 Ω 46 A • Designed for automotive applications and AEC-Q101 qualified 2 3 • Extremely low RDS(on) 1 • Low gate charge and input capacitance TO-247 • Excellent switching performance • 100% avalanche tested Applications Figure 1. Internal schematic diagram • Switching applications Description ' This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency. * 6 $0Y Table 1. Device summary Order code Marking Package Packaging STW62N65M5 62N65M5 TO-247 Tube July 2014 This is information on a product in full production. DocID024837 Rev 3 1/14 www.st.com Contents STW62N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 9 DocID024837 Rev 3 STW62N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 46 A ID Drain current (continuous) at TC = 100 °C 26 A IDM (1) Drain current (pulsed) 184 A PTOT Total dissipation at TC = 25 °C 330 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C 150 °C Value Unit 0.38 °C/W 50 °C/W Value Unit 12 A 1400 mJ Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 46 A, di/dt ≤ 200 A/µs; VDS peak < V(BR)DSS, VDD=400 V 3. VDS ≤ 520 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) DocID024837 Rev 3 3/14 14 Electrical characteristics 2 STW62N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. Unit 650 V VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA VDS = 0, VGS = ± 25 V ± 100 nA 4 5 V 0.041 0.049 Ω Min. Typ. Max. Unit - 6420 - pF - 170 - pF - 11 - pF - 536 - pF - 146 - pF f = 1 MHz, ID = 0 - 1.2 - Ω VDD = 520 V, ID = 23 A, VGS = 10 V (see Figure 16) - 142 - nC - 34 - nC - 58 - nC VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 3 VGS = 10 V, ID = 23 A Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS = 0, VDS = 100 V, f = 1 MHz, VGS = 0, VDS = 0 to 520 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/14 DocID024837 Rev 3 STW62N65M5 Electrical characteristics Table 7. Switching times Symbol Parameter td(V) Voltage delay time tr(V) Voltage rise time tc(off) Crossing time tf(i) Test conditions VDD = 400 V, ID = 30 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17 and Figure 20) Current fall time Min. Typ. Max Unit - 101 - ns - 11 - ns - 14 - ns - 8 - ns Min. Typ. Table 8. Source drain diode Symbol ISD Parameter Test conditions Source-drain current - ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage trr VGS = 0, ISD = 46 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 46 A, di/dt = 100 A/µs VDD = 100 V (see Figure 17) ISD = 46 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 17) - Max. Unit 46 A 184 A 1.5 V - 448 ns - 10 µC - 43 A - 548 ns - 14 µC - 51 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024837 Rev 3 5/14 14 Electrical characteristics 2.1 STW62N65M5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance $0Y ,' $  2 /L SHU P DW LWH LR G QL E\ Q P WKL D[ VD 5' UH D 6 LV RQ —V —V    PV PV 7M ƒ& 7F ƒ& 6LQOJH SXOVH     9'69  Figure 4. Output characteristics Figure 5. Transfer characteristics $0Y ,' $  9*6 9 9             9     $0Y 9'' 9       9*69 AM15919v1 RDS(on) (Ω) VGS=10 V 0.044 ,' $  Figure 7. Static drain-source on-resistance  0.043  0.042  0.041  0.040  0.039   6/14    9'69 Figure 6. Gate charge vs gate-source voltage 9*6 9 9'6 9  9    $0Y ,' $ 0.038    4JQ& DocID024837 Rev 3 0 10 20 30 40 ID(A) STW62N65M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy $0Y & S) $0Y (RVV —-   &LVV     &RVV    &UVV       Figure 10. Normalized gate threshold voltage vs temperature AM05459v2 VGS(th) (norm) 1.10   9'69 ID=250 µA VDS=VGS       9'69 Figure 11. Normalized on-resistance vs temperature AM15497v1 RDS(on) (norm) VGS=10 V 2.5 2 1.00 1.5 0.90 1 0.80 0.5 0.70 -50 -25 0 25 50 Figure 12. Source-drain diode forward characteristics AM05461v1 VSD (V) 0 -55 TJ(°C) 75 100 5 -25 35 65 95 TJ(°C) Figure 13. Normalized V(BR)DSS vs temperature AM10399v1 V(BR)DSS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 DocID024837 Rev 3 0 25 50 75 100 TJ(°C) 7/14 14 Electrical characteristics STW62N65M5 Figure 14. Switching losses vs gate resistance(1) AM12258v1 E (µJ) Eon ID=38A VDD=400V VGS=10V 1000 800 600 Eoff 400 200 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/14 DocID024837 Rev 3 STW62N65M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform Inductive Load Turn - off 9%5'66 Id 9' 90%Vds 90%Id td(v) ,'0 Vgs 90%Vgs on ,' )) Vgs(I(t)) 9'' 9'' 10%Id 10%Vds Vds tr(v) $0Y DocID024837 Rev 3 tf(i) tc(off) AM05540v1 9/14 14 Package mechanical data 4 STW62N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/14 DocID024837 Rev 3 STW62N65M5 Package mechanical data Figure 21. TO-247 drawing 0075325_G DocID024837 Rev 3 11/14 14 Package mechanical data STW62N65M5 Table 9. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 12/14 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024837 Rev 3 5.70 STW62N65M5 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 19-Jun-2013 1 First release. 23-May-2014 2 – Modified: Features in cover page – Minor text changes 25-Jul-2014 3 – Modified: note 2 in Table 2 – Modified: symbol, parameters, tc(off) and tf(i) in Table 7 – Minor text changes DocID024837 Rev 3 13/14 14 STW62N65M5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 14/14 DocID024837 Rev 3