STW62NM60N

STW62NM60N N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet − production data Features Order code VDS RDS(on) max ID STW62NM60N 600 V 0.049 Ω 65 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance TO-247 Applications ■ 3 1 Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STW62NM60N 62NM60N TO-247 Tube December 2012 This is information on a product in full production. Doc ID 018945 Rev 3 1/13 www.st.com 13 Contents STW62NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 018945 Rev 3 STW62NM60N 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 65 A ID Drain current (continuous) at TC = 100 °C 41 A Drain current (pulsed) 260 A Total dissipation at TC = 25 °C 450 W IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 10 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 480 mJ Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.28 °C/W 50 °C/W IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤65 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Doc ID 018945 Rev 3 3/13 Electrical characteristics 2 STW62NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, Tj=125 °C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ±20 V ±0.1 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 32.5 A 0.04 0.049 Ω V(BR)DSS Table 5. Symbol 600 2 V Dynamic Min. Typ. VDS = 100 V, f = 1 MHz, VGS = 0 - 5800 250 12 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 1000 - pF RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 65 A, VGS = 10 V, (see Figure 14) Ciss Coss Crss Coss eq. (1) Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance Max. Unit Ω 2 - 174 28 92 - nC nC nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. Table 6. Symbol td(on) tr td(off) tf 4/13 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 32.5 A RG = 4.7 Ω VGS = 10 V (see Figure 13) Doc ID 018945 Rev 3 Min. Typ. - 30 35 65 210 Max. Unit - ns ns ns ns STW62NM60N Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions Min. Typ. Max. Unit - 65 260 A A 1.6 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 65 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 65 A, di/dt = 100 A/µs VDD = 100 V (see Figure 15) - 470 10 45 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 65 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 15) - 570 15 50 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Doc ID 018945 Rev 3 5/13 Electrical characteristics STW62NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. AM09125v1 AM15501v1 ID (A) K δ=0.5 0.2 O Li per m at ite io d ni by n m this ax a R rea is 100 S( on ) 10µs D 10 Thermal impedance 0.1 100µs 0.05 -1 10 0.02 1ms 0.01 10ms Tj=150°C Tc=25°C 1 Single pulse Single pulse -2 0.1 0.1 10 1 Figure 4. 10 -4 10 VDS(V) 100 Output characteristics Figure 5. AM15502v1 ID (A) VGS= 8, 9, 10 V 160 120 AM15512v1 ID (A) VDS= 15 V 80 VGS= 5 V 40 40 VVGS=4V GS= 4 V 0 0 Figure 6. 4 8 12 16 0 VDS(V) 0 Gate charge vs gate-source voltage Figure 7. AM15513v1 VDS VGS (V) 10 6/13 tp (s) 10 120 VGS= 6 V 80 8 400 0.041 6 300 0.04 4 200 0.039 2 100 0.038 0 Qg(nC) 0.037 40 80 120 160 VGS(V) AM15514v1 VGS=10V 0.042 0 8 6 Static drain-source on-resistance (V) VDD=480 V ID=65 A VDS 4 2 RDS(on) (Ω) 500 0 -1 10 Transfer characteristics 160 VGS= 7 V -2 -3 10 Doc ID 018945 Rev 3 0 10 20 30 40 50 60 ID(A) STW62NM60N Figure 8. Electrical characteristics Capacitance variations Figure 9. AM15515v1 C (pF) Source-drain diode forward characteristics AM15516v1 VSD (V) 1.2 TJ=-50°C 1.1 10000 Ciss 1 0.9 1000 0.8 TJ=25°C Coss 0.7 100 TJ=150°C 0.6 10 0.1 1 100 10 Crss VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM15393v1 VGS(th) (norm) ID =250 µA 0.5 0 10 1.00 1.7 0.95 1.5 0.90 1.3 0.85 1.1 0.80 0.9 0.75 0.7 0.70 -50 -25 0.5 -50 -25 50 75 100 125 TJ(°C) 50 60 ISD(A) AM15387v1 RDS(on) (norm) 2.1 1.9 25 40 Figure 11. Normalized on-resistance vs temperature 1.05 0 30 20 ID= 32,5 A VGS= 10 V 0 25 50 75 100 TJ(°C) Figure 12. Normalized BVDSS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 1.08 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 -50 -25 0 25 50 75 100 TJ(°C) Doc ID 018945 Rev 3 7/13 Test circuits 3 STW62NM60N Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 018945 Rev 3 10% AM01473v1 STW62NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 018945 Rev 3 9/13 Package mechanical data Table 8. STW62NM60N TO-247 mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/13 Typ. 5.45 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 Doc ID 018945 Rev 3 5.50 5.70 STW62NM60N Package mechanical data Figure 19. TO-247 drawing 0075325_G Doc ID 018945 Rev 3 11/13 Revision history 5 STW62NM60N Revision history Table 9. Document revision history Date Revision 27-Jun-2011 1 First release. 14-Jul-2011 2 RDS(on) value has been corrected. 3 – Minor text changes – Document status promoted from preliminary to production data – Modified: RDS(on)max and ID values – Modified: ID, IDM, PTOT, IAS values and note 2 on Table 2 – Modified: Rtjcase on Table 3, IGSS max value, VGS typical value on Table 4 – Modified: max and typical values on Table 7 – Inserted: Section 2.1: Electrical characteristics (curves) 19-Dec-2012 12/13 Changes Doc ID 018945 Rev 3 STW62NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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