STW65N60DM6

STW65N60DM6, STWA65N60DM6 Datasheet N-channel 600 V, 60 mΩ typ., 46 A MDmesh DM6 Power MOSFETs in a TO‑247 and TO‑247 long leads packages Features Order code STW65N60DM6 STWA65N60DM6 1 2 3 1 2 RDS(on) max. ID 600 V 71 mΩ 46 A 3 TO-247 long leads TO-247 VDS D(2, TAB) G(1) • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications • S(3) AM01476v1_tab Switching applications Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status links STW65N60DM6 STWA65N60DM6 Product summary Order code STW65N60DM6 Marking 65N60DM6 Package TO-247 Packing Tube Order code STWA65N60DM6 Marking 65N60DM6 Package TO-247 long leads Packing Tube DS12314 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office. www.st.com STW65N60DM6, STWA65N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 46 Drain current (continuous) at TC = 100 °C 29 IDM (1) Drain current (pulsed) 140 A PTOT Total power dissipation at TC = 25 °C 368 W dv/dt(2) Peak diode recovery voltage slope 100 V/ns di/dt(2) Peak diode recovery current slope 1000 A/μs dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns Tstg Storage temperature range VGS ID TJ Parameter Operating junction temperature range -55 to 150 A °C °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 46 A, VDS (peak) < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 480 V. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 0.34 °C/W 50 °C/W Value Unit 6 A 900 mJ Table 3. Avalanche characteristics Symbol DS12314 - Rev 5 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR; VDD = 50 V) page 2/14 STW65N60DM6, STWA65N60DM6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 600 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 23 A VGS = 0 V, VDS = 600 V, TC = 125 Unit V VGS = 0 V, VDS = 600 V IDSS Max. 1 °C(1) 100 μA ±5 μA 4.00 4.75 V 60 71 mΩ Min. Typ. Max. Unit - 2500 - pF - 125 - pF - 4 - pF 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic characteristics Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 204 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.7 - Ω Qg Total gate charge - 65.2 - nC Qgs Gate-source charge - 16.8 - nC Qgd Gate-drain charge - 30.2 - nC VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 480 V, ID = 42 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) 1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12314 - Rev 5 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 19 A, - 21 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 22 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 56 - ns - 9 - ns Fall time page 3/14 STW65N60DM6, STWA65N60DM6 Electrical characteristics Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 46 A Source-drain current (pulsed) - 140 A 1.6 V Forward on voltage VGS = 0 V, ISD = 46 A - trr Reverse recovery time ISD = 38 A, di/dt = 100 A/μs, - 116 ns Qrr Reverse recovery charge VDD = 60 V - 0.58 µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 10 A trr Reverse recovery time ISD = 38 A, di/dt = 100 A/μs, - 208 ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 1.98 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 19 A IRRM 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS12314 - Rev 5 page 4/14 STW65N60DM6, STWA65N60DM6 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) ZthJC (°C/W) GADG250320211403SOA IDM 0.4 ar ea ) S( on D O is pe lim rat ite ion d in by t R his tp =10 µs 10 10 1 TJ≤150 °C TC=25 °C VGS=10 V single pulse -1 10 10 -1 10 0 VDS (V) 2 10 -2 RthJC = 0.34 °C/W VGS =10V ton 10 T -3 10 -6 10 -5 10 10 -4 -3 10 tp (s) 10 -1 -2 Figure 4. Typical output characteristics GIPD031020181119TCH 120 VGS =9V 100 VDS = 20V 100 VGS =8V 80 duty = ton / T Single pulse ID (A) GIPD031020181119OCH 120 0.05 tp =1 ms tp =10 ms Figure 3. Typical output characteristics ID (A) 0.2 tp =100 µs 10 1 10 -1 0.1 RDS(on) max. V(BR)DSS 0 0.3 duty=0.5 tp =1 µs 10 2 10 GADG250320211419ZTH 80 60 60 VGS =7V 40 40 20 20 0 0 4 8 12 VGS =6V 16 Figure 5. Typical drain-source on-resistance RDS(on) (mΩ) 0 4 VDS (V) GADG250320211420RID VDS (V) 600 64 500 VGS =10V 6 7 8 9 VGS (V) Figure 6. Typical gate charge characteristics 66 62 5 400 GADG220320211445QVG VDD = 480 V, ID = 42 A 12 Qg 10 VDS VGS Qgd Qgs VGS (V) 8 60 300 6 58 200 4 56 100 2 54 0 DS12314 - Rev 5 6 12 18 24 30 36 42 ID (A) 0 0 10 20 30 40 50 60 70 0 Qg (nC) page 5/14 STW65N60DM6, STWA65N60DM6 Electrical characteristics curves Figure 7. Typical capacitance characteristics C (pF) Figure 8. Normalized gate threshold vs temperature VGS(th) (norm.) GIPD031020181120CVR GIPD031020181121VTH 1.1 10 4 CISS 1.0 10 3 0.9 10 2 10 1 COSS f = 1 Mhz ID = 250 µA 0.8 0.7 CRSS 10 0 10 -1 10 0 10 1 10 2 VDS (V) Figure 9. Normalized on resistance vs temperature RDS(on) (norm.) GIPD031020181122RON -25 25 75 125 Tj (°C) Figure 10. Typical output capacitance stored energy Eoss (µJ) GIPD041020181405SDF 24 2.5 20 2.0 1.5 0.6 -75 16 VGS = 10 V 12 1.0 8 0.5 0.0 -75 4 -25 25 75 125 Tj (°C) Figure 11. Normalized breakdown voltage vs temperature V(BR)DSS (norm.) GIPD031020181123BDV 0 0 100 200 300 400 VSD (V) GADG220320211451SDF TJ = -50°C 0.9 TJ = 25°C 1.00 0.8 ID = 1 mA 0.95 TJ = 150°C 0.7 0.90 DS12314 - Rev 5 VDS (V) 1.0 1.05 0.85 -75 600 Figure 12. Typical reverse diode forward characteristics 1.1 1.10 500 0.6 -25 25 75 125 Tj (°C) 0.5 0 6 12 18 24 30 36 42 ISD (A) page 6/14 STW65N60DM6, STWA65N60DM6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD RG VGS IG= CONST VGS VD + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit D G A D.U.T. S 25 Ω A A B B B G RG VD 3.3 µF D + L 100 µH fast diode 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi pulse width _ AM01471v1 AM01470v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD VGS 0 VDS 10% 90% 10% AM01473v1 AM01472v1 DS12314 - Rev 5 page 7/14 STW65N60DM6, STWA65N60DM6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 19. TO-247 package outline aaa 0075325_10 DS12314 - Rev 5 page 8/14 STW65N60DM6, STWA65N60DM6 TO-247 package information Table 8. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 aaa DS12314 - Rev 5 Typ. 5.50 5.70 0.04 0.10 page 9/14 STW65N60DM6, STWA65N60DM6 TO-247 long leads package information 4.2 TO-247 long leads package information Figure 20. TO-247 long leads package outline 8463846_3 DS12314 - Rev 5 page 10/14 STW65N60DM6, STWA65N60DM6 TO-247 long leads package information Table 9. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 P 3.50 Q 5.60 S 6.05 aaa DS12314 - Rev 5 4.30 3.60 3.70 6.00 6.15 6.25 0.04 0.10 page 11/14 STW65N60DM6, STWA65N60DM6 Revision history Table 10. Document revision history Date Version 02-Nov-2017 1 Changes Initial release. Removed maturity status indication from cover page. The document status is production data. Updated title and features in cover page. 03-Oct-2018 2 Updated Updated Section 1 Electrical ratings, Section 2 Electrical characteristics. Added Section 2.1 Electrical characteristics curves. Minor text changes. DS12314 - Rev 5 17-Jun-2020 3 Updated Table 1. Absolute maximum ratings. 31-Mar-2021 4 Updated Table 1. Absolute maximum ratings, Table 2. Thermal data, Table 4. On/off states, Table 7. Source drain diode, Figure 1. Safe operating area, Figure 2. Maximum transient thermal impedance and Figure 6. Gate charge vs gate-source voltage. 21-May-2021 5 Updated Section 4.2 TO-247 long leads package information. Minor text changes. page 12/14 STW65N60DM6, STWA65N60DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS12314 - Rev 5 page 13/14 STW65N60DM6, STWA65N60DM6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS12314 - Rev 5 page 14/14