STW65N65DM2AG

STW65N65DM2AG Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A Power MOSFET MDmesh™ DM2 in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW65N65DM2AG 650 V 0.05 Ω 60 A 446 W • 3 2 • • 1 TO-247 • • • • Figure 1: Internal schematic diagram Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STW65N65DM2AG 65N65DM2 TO-247 Tube August 2015 DocID028164 Rev 1 This is information on a product in full production. 1/12 www.st.com Contents STW65N65DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/12 TO-247 package information ............................................................. 9 Revision history ............................................................................ 11 DocID028164 Rev 1 STW65N65DM2AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS ID (1) IDM PTOT Parameter Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 60 Drain current (continuous) at Tcase = 100 °C 38 Drain current (pulsed) 240 A W Total dissipation at Tcase = 25 °C 446 dv/dt (2) Peak diode recovery voltage slope 50 dv/dt (3) MOSFET dv/dt ruggedness 50 Tstg Tj Storage temperature Operating junction temperature A V/ns -55 to 150 °C Value Unit Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 60 A, di/dt=800 A/μs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS ≤ 520 V. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient 0.28 50 °C/W Table 4: Avalanche characteristics Symbol IAR (1) EAS Parameter Avalanche current, repetitive or not repetitive Single pulse avalanche energy Value Unit 8 A 1100 mJ Notes: (1) starting Tj = 25 °C, ID = IAR, VDD = 50 V. DocID028164 Rev 1 3/12 Electrical characteristics 2 STW65N65DM2AG Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 650 Unit V VGS = 0 V, VDS = 650 V 10 VGS = 0 V, VDS = 650 V, Tcase = 125 °C 100 ±5 µA 4 5 V 0.042 0.05 Ω Min. Typ. Max. Unit - 5500 - - 210 - - 3 - IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 30 A 3 µA Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V pF Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 456 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 3.3 - Ω Qg Total gate charge - 120 - Qgs Gate-source charge - 27 - Qgd Gate-drain charge VDD = 520 V, ID = 60 A, VGS = 10 V (see Figure 15: "Gate charge test circuit") - 58 - Coss eq. (1) nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/12 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 325 V, ID = 30 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform") DocID028164 Rev 1 Min. Typ. Max. - 33 - - 13.5 - - 114 - - 11.5 - Unit ns STW65N65DM2AG Electrical characteristics Table 8: Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 60 A (1) Source-drain current (pulsed) - 240 A (2) Forward on voltage - 1.6 V ISDM VSD VGS = 0 V, ISD = 60 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 60 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") ISD = 60 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 154 ns - 0.94 µC - 12.2 A - 288 ns - 3.65 µC - 25.4 A Notes: (1) (2) Pulse width is limited by safe operating area. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID028164 Rev 1 5/12 Electrical characteristics 2.1 6/12 STW65N65DM2AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID028164 Rev 1 STW65N65DM2AG Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Source- drain diode forward characteristics DocID028164 Rev 1 7/12 Test circuits 3 STW65N65DM2AG Test circuits Figure 14: Switching times test circuit for resistive load Figure 15: Gate charge test circuit Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform 8/12 DocID028164 Rev 1 STW65N65DM2AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 20: TO-247 package outline 0075325_H DocID028164 Rev 1 9/12 Package information STW65N65DM2AG Table 9: TO-247 package mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/12 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID028164 Rev 1 3.65 5.50 5.50 5.70 STW65N65DM2AG 5 Revision history Revision history Table 10: Document revision history Date Revision 04-Aug-2015 1 DocID028164 Rev 1 Changes Initial release. 11/12 STW65N65DM2AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 12/12 DocID028164 Rev 1