STW69N65M5

STFW69N65M5 STW69N65M5 N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET in TO-3PF and TO-247 packages Datasheet − production data Features Order codes VDSS @ TJmax RDS(on) max STFW69N65M5 STW69N65M5 710 V < 0.045 Ω ID 58 A 1 ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability 3 ■ Excellent switching performance ■ 100% avalanche tested 2 2 1 3 1 TO-247 TO-3PF Applications ■ Switching applications Figure 1. Internal schematic diagram Description $ These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. ' 3 !-V Table 1. Device summary Order codes Marking STFW69N65M5 Package TO-3PF 69N65M5 STW69N65M5 September 2012 This is information on a product in full production. Packaging Tube TO-247 Doc ID 022906 Rev 2 1/16 www.st.com 16 Contents STFW69N65M5, STW69N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-3PF VGS Gate-source voltage ± 25 ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (2) PTOT dv/dt (3) Drain current (pulsed) Total dissipation at TC = 25 °C 58 Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc=25°C) Tstg Storage temperature V (1) 58 A 36.5 (1) 36.5 A (1) 232 A 330 W 232 79 Peak diode recovery voltage slope VISO Tj TO-247 15 V/ns 3500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area 3. ISD ≤ 58 A, di/dt ≤400 A/µs; VDS peak < V(BR)DSS, VDD=400 V Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Table 4. Symbol Unit TO-3PF TO-247 1.58 0.38 °C/W 50 °C/W Value Unit Avalanche characteristics Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) 12 A EAS Single pulse avalanche energy (starting tj=25°C, Id= IAR; Vdd=50) 1410 mJ Doc ID 022906 Rev 2 3/16 Electrical characteristics 2 STFW69N65M5, STW69N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Symbol Ciss Coss Crss Co(tr)(1) Co(er) (2) Typ. Max. Unit 650 V 1 100 µA µA ± 100 nA 4 5 V 0.037 0.045 Ω Min. Typ. Max. Unit - 6420 170 11 - pF pF pF - 536 - pF - 146 - pF - 1.2 - Ω - 143 38 64 - nC nC nC VGS = ± 25 V VGS(th) Table 6. Min. 3 VGS = 10 V, ID = 29 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 Equivalent capacitance time related VDS = 0 to 520 V, VGS = 0 Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 29 A, VGS = 10 V (see Figure 18) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/16 Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 Table 7. Symbol td(v) tr(v) tf(i) tc(off) Table 8. Electrical characteristics Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 38 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 102 13.5 10 19 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 58 232 A A ISD = 58 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 58 A, di/dt = 100 A/µs VDD = 100 V (see Figure 19) - 480 11 46 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 58 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 19) - 592 16 53 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022906 Rev 2 5/16 Electrical characteristics STFW69N65M5, STW69N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3PF Figure 3. Thermal impedance for TO-3PF !-V )$ ! TO3PF K δ=0.5  0.2 IS EA N AR S $3O I TH 2 IN AX N IO YM T RA DB PE / MITE ,I   —S 10 0.05 MS    0.02 0.01 Single pulse 3INLGE PULSE Figure 4. -1 MS 4J # 4C #   0.1 —S -2  6$36 Safe operating area for TO-247 10 -5 10 -4 -2 -3 10 10 10 -1 10 tp (s) Figure 5. Thermal impedance for TO-247 Figure 7. Transfer characteristics !-V )$ !  —S ON —S $ 3 / ,I PER M AT ITE IO D NI BY N M THI AX SA 2 RE A IS   MS MS 4J # 4C #  3INLGE PULSE   Figure 6.    6$36 Output characteristics !-V )$ !  6'36 6              6/16 6     6$36  6  !-V )$ !  6$36    Doc ID 022906 Rev 2       6'36 STFW69N65M5, STW69N65M5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. !-V 6'3 6  6'3 6$$6 6$3  )$!       !-V 2$3ON /HM   6'36         Static drain-source on-resistance          1GN# Figure 10. Capacitance variations         )$! Figure 11. Output capacitance stored energy !-V # P& !-V %OSS —*   #ISS    #OSS     #RSS       Figure 12. Normalized gate threshold voltage vs temperature AM05459v2 VGS(th) (norm) 1.10   6$36 ID=250 µA VDS=VGS       6$36 Figure 13. Normalized on-resistance vs temperature RDS(on) (norm) 2.1 AM05460v2 VGS=10V ID=29A 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 Doc ID 022906 Rev 2 0 25 50 75 100 TJ(°C) 7/16 Electrical characteristics STFW69N65M5, STW69N65M5 Figure 14. Source-drain diode forward characteristics Figure 15. Normalized BVDSS vs temperature AM05461v1 VSD (V) AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 Figure 16. Switching losses vs gate resistance(1) !-V %  *  )$! 6$$6 6'36 %ON   %OFF        2' 1. Eon including reverse recovery of a SiC diode 8/16 Doc ID 022906 Rev 2 0 25 50 75 100 TJ(°C) STFW69N65M5, STW69N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit 6$$ 6 K K N&  &  2, & 6'3 )'#/.34 6$$  6I66'-!8 6$ 2'  & $54 $54 6' K 07 K K 07 !-V !-V Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit ! ! $54 &!34 $)/$% " " , ! $ ' 3 6$ , (  & "   & $ 6$$  &  & 6$$ )$ ' 2' 3 6I $54 0W !-V Figure 21. Unclamped inductive waveform !-V Figure 22. Switching time waveform Inductive Load Turn - off 6"2 $33 Id 6$ 90%Vds 90%Id td(v) )$Vgs 90%Vgs on )$ )) Vgs(I(t)) 6$$ 6$$ 10%Id 10%Vds Vds tr(v) !-V Doc ID 022906 Rev 2 tf(i) tc(off) AM05540v1 9/16 Package mechanical data 4 STFW69N65M5, STW69N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 Table 9. Package mechanical data TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 Doc ID 022906 Rev 2 15.70 10 10.20 11/16 Package mechanical data STFW69N65M5, STW69N65M5 Figure 23. TO-3PF drawing L3 L D E A C D1 Dia L2 L6 L7 F2(3x) F(3x) G1 H G R L5 N L4 7627132_C 12/16 Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 Table 10. Package mechanical data TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 Doc ID 022906 Rev 2 5.50 5.70 13/16 Package mechanical data STFW69N65M5, STW69N65M5 Figure 24. TO-247 drawing 0075325_G 14/16 Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 5 Revision history Revision history Table 11. Document revision history Date Revision 27-Feb-2012 1 First release. 2 – Modified: note 3 of Table 2, values in Table 4, typ. values in Table 6, 7 and 8 – Curves inserted – Minor text changes 28-Sep-2012 Changes Doc ID 022906 Rev 2 15/16 STFW69N65M5, STW69N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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