STW6N95K5

STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5 Datasheet N-channel 950 V, 1 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages Features TAB TAB Order codes 3 DPAK 1 VDS RDS(on) max. ID PTOT 950 V 1.25 Ω 9A 90 W STD6N95K5 TO-220 TAB 2 1 3 STP6N95K5 STU6N95K5 STW6N95K5 12 IPAK 3 TO-247 1 2 D(2, TAB) 3 • DPAK 950 V worldwide best RDS(on) • • • • Worldwide best FOM (figure of merit) Ultra low gate charge 100% avalanche tested Zener-protected Applications G(1) • S(3) Product status link AM01475V1 Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. STD6N95K5 STP6N95K5 STU6N95K5 STW6N95K5 DS6666 - Rev 5 - March 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Parameter Gate- source voltage Value Unit ± 30 V ID Drain current (continuous) at TC = 25 °C 9 A ID Drain current (continuous) at TC = 100 °C 6 A IDM (1) Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25 °C 90 W IAR (2) Max current during repetitive or single pulse avalanche 3 A 90 mJ Peak diode recovery voltage slope 4.5 V/ns MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C EAS dv/dt (3) dv/dt (4) Tj Tstg Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) Operating junction temperature range Storage temperature range 1. Pulse width limited by safe operating area. 2. Pulse width limited by TJmax. 3. ISD ≤ 9 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS 4. VDS ≤ 760 V Table 2. Thermal data Value Symbol Parameter TO-220, IPAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-amb Rthj-pcb (1) Thermal resistance junction-pcb DPAK TO-247 1.39 62.5 °C/W 50 50 Unit °C/W °C/W 1. When mounted on 1 inch² FR-4 board, 2 oz Cu DS6666 - Rev 5 page 2/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Min. VGS= 0 V, ID = 1 mA Typ. 950 Zero gate voltage drain current IGSS Gate body leakage current VDS = 0, VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID= 3 A VGS = 0 V, VDS = 950 V, Tc=125 Unit V VGS = 0 V, VDS = 950 V IDSS Max. 1 µA 50 µA ±10 µA 4 5 V 1 1.25 Ω Min. Typ. Max. Unit - 450 - pF - 30 - pF - 1.6 - pF - 45 - pF - 19 - pF - 7 - Ω - 13 - nC - 3 - nC - 7 - nC °C(1) 3 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr) (1) Equivalent capacitance time related Co(er) (2) Equivalent capacitance energy related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS=0 V, VDS =100 V, f=1 MHz VGS = 0 V, VDS = 0 to 760 V f = 1 MHz, ID=0 A VDD = 760 V, ID = 6 A, VGS = 0 to 10 V, (see Figure 17. Test circuit for gate charge behavior) 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. Table 5. Switching times Symbol td(on) tr td(off) tf DS6666 - Rev 5 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 475 V, ID = 3 A, RG=4.7 Ω, VGS=10 V (see Figure 16. Test circuit for resistive load switching times and Figure 21. Switching time waveform) Min. Typ. Max. Unit - 12 - ns - 12 - ns - 33 - ns - 21 - ns page 3/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical characteristics Table 6. Source drain diode Symbol ISD ISDM(1) (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 9 A Source-drain current (pulsed) - 24 A 1.6 V Forward on voltage ISD= 6 A, VGS=0 V - trr Reverse recovery time ISD= 6 A, VDD= 60 V - 372 ns Qrr Reverse recovery charge di/dt = 100 A/µs, - 4 µC Reverse recovery current (see Figure 18. Test circuit for inductive load switching and diode recovery times) - 22 A trr Reverse recovery time ISD= 6 A,VDD= 60 V - 522 ns Qrr Reverse recovery charge di/dt=100 A/µs, Tj=150 °C - 5 µC Reverse recovery current (see Figure 18. Test circuit for inductive load switching and diode recovery times) - 20 A Min Typ. Max. Unit ±30 - - V VSD IRRM IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 7. Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS = ± 1mA, ID= 0 A The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS6666 - Rev 5 page 4/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for DPAK and IPAK AM07105v1 ID (A) Figure 2. Thermal impedance for DPAK and IPAK GC20460 K Tj=150°C Tc=25°C Single pulse 10 on ) 100 100µs D S( O Li per m at ite io d ni by n m this ax a R rea is 10µs 1 1ms 10ms 0.1 0.01 0.1 10 1 VDS(V) 100 Figure 3. Safe operating area for TO-220 and TO-247 10-1 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 4. Thermal impedance for TO-220 and TO-247 AM07107v1 ID (A) Tj=150°C Tc=25°C Single pulse ) 10µs D S( on O Li per m at ite io d ni by n m this ax a R rea is 10 1 100µs 1ms 10ms 0.1 0.01 0.1 10 1 VDS(V) 100 Figure 5. Output characteristics Figure 6. Transfer characteristics AM07108v1 ID (A) VGS=10V 12 AM07109v1 ID (A) VDS=15V 8 10 6 8 7V 6 4 4 6V 2 2 5V 0 0 DS6666 - Rev 5 5 10 15 20 25 VDS(V) 0 0 2 4 6 8 VGS(V) page 5/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage AM07110v1 VDS VGS (V) 12 VDS (V) 700 VDD=760V ID=6A 600 10 500 8 AM07111v1 RDS(on) (Ohm) 1.03 VGS=10V 1.01 0.99 0.97 400 6 300 4 2 0 Figure 8. Static drain-source on-resistance 0 4 2 6 8 10 12 0.91 100 0.89 Figure 9. Capacitance variations 0.87 0.5 1.5 1.0 2.0 2.5 3.0 ID(A) Figure 10. Output capacitance storage energy AM07112v1 C (pF) 0.93 200 0 Qg(nC) 14 0.95 AM07113v1 Eoss (µJ) 22 20 1000 18 1 Ciss 16 14 100 12 10 10 Coss f = 1 MHz Crss 1 0.1 8 6 4 2 1 100 10 VDS(V) Figure 11. Normalized gate threshold voltage vs temperature AM07114v1 VGS(th) (norm) ID=100 µA 1.2 0 0 100 200 400 500 600 700 800 900 VDS(V) Figure 12. Normalized on-resistance vs temperature AM07115v1 RDS(on) (norm) VGS=10V ID=3A 2.5 1.1 300 2.0 1.0 1.5 0.9 0.8 1.0 0.7 0.5 0.6 0.5 0.4 -75 DS6666 - Rev 5 0 -75 -25 25 75 125 -25 25 75 125 TJ(°C) TJ(°C) page 6/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical characteristics (curves) Figure 13. Source-drain diode forward characteristics AM07118v1 VSD (V) 0.95 Figure 14. Normalized V(BR)DSS vs temperature AM07116v1 V(BR)DSS (norm) ID=1 mA 1.2 TJ=-50°C 1.1 0.85 TJ=25°C 1.0 0.75 0.9 TJ=150°C 0.65 0.55 2.0 3.0 4.0 5.0 0.8 6.0 0.7 -75 ISD(A) -25 25 75 125 TJ(°C) Figure 15. Maximum avalanche energy vs starting Tj AM07117v1 EAS (mJ) 100 ID=3 A VDD=50 V 90 80 70 60 50 40 30 20 10 0 0 DS6666 - Rev 5 20 40 60 80 100 120 140 TJ(°C) page 7/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Test circuits 3 Test circuits Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times Figure 19. Unclamped inductive load test circuit L D G A D.U.T. S 25 Ω A A 100 µH fast diode B B B VD 3.3 µF D G + RG 1000 + µF 2200 + µF 3.3 µF VDD ID VDD D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform V(BR)DSS ton VD td(on) IDM toff td(off) tr 90% tf 90% 10% ID VDD 10% 0 VDD VGS 0 VDS 90% 10% AM01472v1 AM01473v1 DS6666 - Rev 5 page 8/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS6666 - Rev 5 page 9/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type A2 package information 4.1 DPAK (TO-252) type A2 package information Figure 22. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev24 DS6666 - Rev 5 page 10/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type A2 package information Table 8. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS6666 - Rev 5 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type C2 package information 4.2 DPAK (TO-252) type C2 package information Figure 23. DPAK (TO-252) type C2 package outline 0068772_C2_24 DS6666 - Rev 5 page 12/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type C2 package information Table 9. DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.20 5.60 6.60 6.70 5.50 0.90 1.25 0.51 BSC 0.60 L6 DS6666 - Rev 5 6.10 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 13/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type C2 package information Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_24 DS6666 - Rev 5 page 14/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS6666 - Rev 5 page 15/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) packing information Figure 26. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS6666 - Rev 5 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 16/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 TO-220 type A package information 4.4 TO-220 type A package information Figure 27. TO-220 type A package outline 0015988_typeA_Rev_21 DS6666 - Rev 5 page 17/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 TO-220 type A package information Table 11. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS6666 - Rev 5 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 18/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 IPAK (TO-251) type A package information 4.5 IPAK (TO-251) type A package information Figure 28. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS6666 - Rev 5 page 19/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 IPAK (TO-251) type A package information Table 12. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H DS6666 - Rev 5 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° 1.00 page 20/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 TO-247 package information 4.6 TO-247 package information Figure 29. TO-247 package outline 0075325_9 DS6666 - Rev 5 page 21/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 TO-247 package information Table 13. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS6666 - Rev 5 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 22/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Ordering information 5 Ordering information Table 14. Ordering information DS6666 - Rev 5 Order code Marking Package Packing STD6N95K5 6N95K5 DPAK Tape and reel STP6N95K5 6N95K5 TO-220 Tube STU6N95K5 6N95K5 IPAK Tube STW6N95K5 6N95K5 TO-247 Tube page 23/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Revision history Table 15. Document revision history Date Revision Changes 12-Jan-2010 1 First release. 01-Jul-2010 2 Document status promoted from preliminary data to datasheet. Inserted new device in IPAK. 31-Aug-2012 3 Updated Table 1: Device summary, Table 2: Absolute maximum ratings, and Table 3: Thermal data. Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data. Minor text changes in the cover page. The part number STF6N95K5 has been moved to a separate datasheet. 16-May-2014 4 Added: MOSFET dv/dt ruggedness parameter in Table 2 Updated: Section 4: Package mechanical data Minor text changes Removed maturity status indication and updated title and description from cover page. The document status is production data. 22-Mar-2018 5 Updated Section 1 Electrical ratings, Section 2 Electrical characteristics. Updated Figure 9. Capacitance variations and Figure 12. Normalized on-resistance vs temperature. Updated Section 4 Package information. Minor text changes. DS6666 - Rev 5 page 24/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Contents Contents 1 Electrical ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 DPAK (TO-252) packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.4 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.5 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.6 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 DS6666 - Rev 5 page 25/26 STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6666 - Rev 5 page 26/26