STW70N60DM2

STW70N60DM2 N-channel 600 V, 0.037 Ω typ., 66 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW70N60DM2 600 V 0.042 Ω 66 A 446 W   3 2     1 TO-247 Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Figure 1: Internal schematic diagram  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STW70N60DM2 70N60DM2 TO-247 Tube December 2015 DocID026843 Rev 4 This is information on a product in full production. 1/12 www.st.com Contents STW70N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/12 TO-247 package information ............................................................. 9 Revision history ............................................................................ 11 DocID026843 Rev 4 STW70N60DM2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 66 Drain current (continuous) at Tcase = 100 °C 42 IDM(1) Drain current (pulsed) 264 A PTOT W VGS ID Total dissipation at Tcase = 25 °C 446 dv/dt(2) Peak diode recovery voltage slope 50 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature Tj Operating junction temperature A V/ns -55 to 150 °C Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 66 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 0.28 °C/W 50 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax) 10 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 1500 mJ DocID026843 Rev 4 3/12 Electrical characteristics 2 STW70N60DM2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 10 VGS = 0 V, VDS = 600 V, Tcase = 125 °C 100 Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 33 A 0.037 0.042 Ω Min. Typ. Max. Unit - 5508 - - 241 - - 2.8 - IDSS Zero gate voltage drain current IGSS 3 µA Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 470 - pF RG Intrinsic gate resistance f = 1 MHz, ID= 0 A - 2 - Ω Qg Total gate charge - 121 - Qgs Gate-source charge - 26 - Qgd Gate-drain charge VDD = 480 V, ID = 66 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 61 - VDS = 100 V, f = 1 MHz, ID = 0 A pF nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/12 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 33 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and ) DocID026843 Rev 4 Min. Typ. Max. - 32 - - 67 - - 112 - - 10.4 - Unit ns STW70N60DM2 Electrical characteristics Table 8: Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 66 A ISDM(1) Source-drain current (pulsed) - 264 A VSD(2) Forward on voltage VGS = 0 V, ISD = 66 A - 1.6 V ISD = 66 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 150 ns - 0.75 µC - 10.5 A ISD = 66 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 250 ns - 2.5 µC - 20.7 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID026843 Rev 4 5/12 Electrical characteristics 2.1 STW70N60DM2 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance d 6/12 Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID026843 Rev 4 STW70N60DM2 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Source- drain diode forward characteristics DocID026843 Rev 4 7/12 Test circuits 3 STW70N60DM2 Test circuits Figure 15: Test circuit for gate charge behavior Figure 14: Test circuit for resistive load switching times Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform 8/12 DocID026843 Rev 4 Figure 19: Switching time waveform STW70N60DM2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 package information Figure 20: TO-247 package outline DocID026843 Rev 4 9/12 Package information STW70N60DM2 Table 9: TO-247 package mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/12 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID026843 Rev 4 3.65 5.50 5.50 5.70 STW70N60DM2 5 Revision history Revision history Table 10: Document revision history Date Revision Changes 04-Sep-2014 1 First release. 18-May-2015 2 Document status promoted from preliminary to production data. Added Section 2.1 Electrical characteristics (curves). 08-Jul-2015 3 Text and formatting changes throughout document in Section Electrical characteristics: - updated Tables Dynamic and Source-drain diode 09-Dec-2015 4 Updated Table 4: "Avalanche characteristics". DocID026843 Rev 4 11/12 STW70N60DM2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 12/12 DocID026843 Rev 4