STW70N60DM6-4

STW70N60DM6-4 Datasheet N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFET in a TO247-4 package Features 1 2 4 3 TO247-4 Drain(1, TAB) Gate(4) Order code VDS RDS(on) max. ID STW70N60DM6-4 600 V 42 mΩ 62 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Excellent switching performance thanks to the extra driving source pin Applications Driver source (3) • Power source (2) AM10177v2Z Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status links STW70N60DM6-4 Product summary Order code STW70N60DM6-4 Marking 70N60DM6 Package TO247-4 Packing Tube DS12995 - Rev 2 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com STW70N60DM6-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 62 A ID Drain current (continuous) at TC = 100 °C 39 A Drain current (pulsed) 220 A Total power dissipation at TC = 25 °C 390 W dv/dt(2) Peak diode recovery voltage slope 100 V/ns di/dt(2) Peak diode recovery current slope 1000 A/µs dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns Tstg Storage temperature range VGS IDM (1) PTOT TJ Parameter Operating junction temperature range -55 to 150 °C °C 1. Pulse width is limited by safe operating area. 2. ISD ≤ 62 A, VDS (peak) < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 480 V. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 0.32 °C/W 50 °C/W Value Unit 7 A 1850 mJ Table 3. Avalanche characteristics Symbol DS12995 - Rev 2 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) page 2/12 STW70N60DM6-4 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 600 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance VGS = 10 V, ID= 31 A VGS = 0 V, VDS = 600 V, TJ = 125 Unit V VGS = 0 V, VDS = 600 V IDSS Max. 5 °C(1) 100 μA ±5 μA 4 4.75 V 36 42 mΩ Min. Typ. Max. Unit - 4360 - - 235 - - 13 - 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic characteristics Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 286 - RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.5 - Qg Total gate charge - 99 - Qgs Gate-source charge - 28 - Qgd Gate-drain charge - 44 - VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 480 V, ID = 62 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) pF Ω nC 1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Switching times Symbol td(on) tr td(off) tf DS12995 - Rev 2 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 31 A, - 27 - ns Rise time RG = 4.7 Ω , VGS = 10 V - 15 - ns Turn-off delay time (see Figure 13. Switching times test circuit for resistive load and Figure 18. Switching time waveform) - 100 - ns - 11 - ns Fall time page 3/12 STW70N60DM6-4 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 62 A ISDM(1) Source-drain current (pulsed) - 220 A VSD(2) Forward on voltage VGS = 0 V, ISD = 62 A - 1.6 V trr Reverse recovery time ISD = 62 A, di/dt = 100 A/μs, - 138 - ns Qrr Reverse recovery charge VDD = 60 V - 0.69 - µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 10 - A trr Reverse recovery time ISD = 62 A, di/dt = 100 A/μs, - 340 - ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 4.6 - µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 27 - A IRRM 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS12995 - Rev 2 page 4/12 STW70N60DM6-4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) 10 GADG081020181656SOA AM09125v1 K d=0.5 2 Operation in this area is limited by RDS(on) 0.2 0.1 tp =10 µs 10 1 tp =100 µs 10 0 0.05 10 -1 0.02 0.01 tp =1 ms 10 -1 Single pulse, TC = 25 °C, TJ ≤ 150 °C, VGS = 10 V 10 -2 10 -1 10 0 10 1 tp tp =10 ms VDS (V) 10 2 t -2 10 -4 10 Figure 3. Output characteristics ID (A) Zth =k *Rthj-c d=t p /t Single pulse 10 -3 10 -2 10 -1 t p (s) Figure 4. Transfer characteristics ID (A) GADG081020181655OCH VGS = 9, 10 V 200 GADG081020181655TCH 200 VGS = 8 V 160 160 VDS = 18 V VGS = 7 V 120 120 80 80 VGS = 6 V 40 40 VGS = 5 V 0 0 4 8 12 16 VDS (V) Figure 5. Gate charge vs gate-source voltage VDS (V) GADG081020181656QVG VDD = 480 V, ID = 62 A 600 VGS (V) 0 4 10 38 8 37 300 6 36 200 4 35 100 2 34 VDS 0 0 DS12995 - Rev 2 20 40 60 80 100 120 0 Qg (nC) 7 RDS(on) (mΩ) 39 400 6 8 9 VGS (V) Figure 6. Static drain-source on-resistance 12 500 5 33 0 GADG081020181654RID VGS = 10 V 10 20 30 40 50 60 ID (A) page 5/12 STW70N60DM6-4 Electrical characteristics (curves) Figure 8. Coss stored energy vs VDS Figure 7. Capacitance variations C (pF) E (μJ) GADG081020181655CVR GADG081020181656EOS 40 10 4 CISS 10 3 10 2 32 24 COSS f = 1 MHz 16 8 10 1 10 -1 CRSS 10 10 0 10 1 2 VDS (V) Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG081020181654VTH 100 200 300 400 500 600 VDS (V) Figure 10. Normalized on-resistance vs temperature RDS(on) (norm.) GADG081020181654RON 2.5 1.1 2.0 1.0 VGS = 10 V 1.5 0.9 ID = 250 µA 0.8 1.0 0.5 0.7 0.6 -75 0 0 -25 25 75 125 Tj (°C) Figure 11. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG081020181655BDV 0.0 -75 -25 25 75 Tj (°C) Figure 12. Source-drain diode forward characteristics VSD (V) GADG081020181655SDF Tj = -50 °C 1.1 1.10 125 1.0 1.05 0.9 Tj = 25°C 1.00 ID = 1 mA 0.8 0.95 0.90 0.85 -75 DS12995 - Rev 2 Tj = 150 °C 0.7 0.6 -25 25 75 125 Tj (°C) 0.5 0 10 20 30 40 50 60 ISD (A) page 6/12 STW70N60DM6-4 Test circuits 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Test circuit for gate charge behavior VDD RL RL + VD VGS 3.3 µF 2200 µF VDD IG= CONST VGS RG + pulse width D.U.T. 2200 μF PW D.U.T. 100 Ω 2.7 kΩ VG 47 kΩ GND1 (driver signal) GND2 (power) 1 kΩ GND1 AM15855v1 GND2 GADG180720181011SA Figure 15. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE Figure 16. Unclamped inductive load test circuit A L D G S L=100µH B B D 25Ω VD 3.3 µF B + 1000 µF 2200 µF 3.3 µF + VDD VDD ID G S RG D.U.T. Vi D.U.T. Pw GND2 GND1 GND1 GND2 AM15858v1 AM15857v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12995 - Rev 2 page 7/12 STW70N60DM6-4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO247-4 package information Figure 19. TO247-4 package outline 8405626_2 DS12995 - Rev 2 page 8/12 STW70N60DM6-4 TO247-4 package information Table 8. TO247-4 mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 1.29 1.20 P1 7.40 P2 2.40 Q 5.60 S DS12995 - Rev 2 1.25 2.50 2.60 6.00 6.15 T 9.80 10.20 U 6.00 6.40 page 9/12 STW70N60DM6-4 Revision history Table 9. Document revision history DS12995 - Rev 2 Date Revision 16-Apr-2019 1 06-Jul-2020 2 Changes First release. Updated Table 1. Absolute maximum ratings. Updated Table 7. Source drain diode. page 10/12 STW70N60DM6-4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS12995 - Rev 2 page 11/12 STW70N60DM6-4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12995 - Rev 2 page 12/12