STW70N60M2-4

STW70N60M2 N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2 Power MOSFET in a TO-247 package Datasheet − production data Features 2 3 1 TO-247 Order codes VDS @ TJmax RDS(on) max ID STW70N60M2 650 V 0.040 Ω 68 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications Figure 1. Internal schematic diagram • Switching applications D(2) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STW70N60M2 70N60M2 TO-247 Tube September 2014 This is information on a product in full production. DocID024327 Rev 4 1/13 www.st.com 13 Contents STW70N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 DocID024327 Rev 4 STW70N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 68 A ID Drain current (continuous) at TC = 100 °C 43 A IDM (1) Drain current (pulsed) 272 A PTOT Total dissipation at TC = 25 °C 450 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C Value Unit 0.28 °C/W 50 °C/W Value Unit dv/dt (2) dv/dt(3) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 68 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V. 3. VDS ≤ 480 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax ) 10 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= 10 A; VDD=50) 1500 mJ DocID024327 Rev 4 3/13 Electrical characteristics 2 STW70N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Unit 600 V 1 µA 100 µA ±10 µA 3 4 V 0.030 0.040 Ω Min. Typ. Max. Unit - 5200 - pF - 250 - pF - 5 - pF VGS = ± 25 V VGS(th) Max. 2 VGS = 10 V, ID = 34 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 395 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 - 3.3 - Ω Qg Total gate charge - 118 - nC Qgs Gate-source charge - 25 - nC Qgd Gate-drain charge VDD = 480 V, ID = 68 A, VGS = 10 V (see Figure 15) - 47 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 300 V, ID = 34 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and Figure 19) DocID024327 Rev 4 Min. Typ. Max. Unit - 32 - ns - 17 - ns - 155 - ns - 9 - ns STW70N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 68 A ISDM (1) Source-drain current (pulsed) - 272 A VSD (2) Forward on voltage 1.6 V ISD trr ISD = 68 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 68 A, di/dt = 100 A/µs VDD = 60 V (see Figure 18) ISD = 68 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 18) - 0.98 - 520 ns - 12 µC - 45 A - 680 ns - 18 µC - 50 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024327 Rev 4 5/13 Electrical characteristics 2.1 STW70N60M2 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM09125v1 AM17966v1 ID (A) K δ=0.5 100 0.2 10 t ra io n in pe ed O imit L th by is ar ax ea R D 10µs is S( on ) 0.1 100µs 0.05 -1 m 10 0.02 1ms 0.01 Zth=k Rthj-c d=tp/t 10ms Single pulse 1 Tj=150°C Tc=25°C Single pulse tp t -2 0.1 0.1 1 10 100 10 -4 10 VDS(V) Figure 4. Output characteristics -2 -3 -1 10 10 tp (s) 10 Figure 5. Transfer characteristics AM17967v1 ID (A) AM17968v1 ID (A) VGS=7, 8, 9, 10V VDS=17V 150 150 6V 120 120 90 90 5V 60 60 30 30 4V 0 0 8 4 12 16 3V VDS(V) Figure 6. Gate charge vs gate-source voltage AM17969v1 VDS VGS (V) 0 (V) 500 0.0315 8 400 0.031 6 300 0.0305 4 200 0.03 2 100 0.0295 0 Qg(nC) 0.029 VDD=480V ID=68A VDS 0 0 20 40 60 80 100 120 4 2 8 6 VGS(V) Figure 7. Static drain-source on-resistance RDS(on) (Ω) 10 6/13 0 DocID024327 Rev 4 AM17970v1 VGS=10V 0 10 20 30 40 50 60 ID(A) STW70N60M2 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM17971v1 C (pF) AM17972v1 Eoss (µJ) 10000 Ciss 30 1000 Coss 20 100 10 10 Crss 1 0.1 1 10 100 Figure 10. Normalized gate threshold voltage vs temperature AM17973v1 VGS(th) 0 VDS(V) (norm) 0 400 500 VDS(V) Figure 11. Normalized on-resistance vs temperature AM17974v1 RDS(on) ID=34A ID=250µA 2.2 1 1.8 0.9 1.4 0.8 1 0.7 0.6 0 50 100 TJ(°C) Figure 12. Normalized VDS vs temperature 0.2 -50 0 50 100 TJ(°C) Figure 13. Source-drain diode forward characteristics AM15975v1 VDS AM17976v1 VSD (V) (norm) ID=1mA 1.09 1 1.05 0.9 1.01 0.8 0.97 0.7 0.93 0.6 0.89 -50 300 (norm) 1.1 0.6 -50 200 100 TJ=-50°C TJ=25°C TJ=150°C 0.5 0 50 100 TJ(°C) DocID024327 Rev 4 0 10 20 30 40 50 60 ISD(A) 7/13 Test circuits 3 STW70N60M2 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 8/13 0 DocID024327 Rev 4 10% AM01473v1 STW70N60M2 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID024327 Rev 4 9/13 Package mechanical data STW70N60M2 Figure 20. TO-247 drawing 0075325_G 10/13 DocID024327 Rev 4 STW70N60M2 Package mechanical data Table 9. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024327 Rev 4 5.70 11/13 Revision history 5 STW70N60M2 Revision history Table 10. Document revision history 12/13 Date Revision Changes 28-Feb-2013 1 First release. 13-Mar-2013 2 – Minor text changes – Modified: test condition in Table 7 12-Dec-2013 3 – Modified: title – Modified: Table 4, RDS(on) typical value in Table 5, the entire typical values in Table 6, 7 and 8 – Updated: Section 3: Test circuits – Added: Section 2.1: Electrical characteristics (curves) – Minor text changes 01-Sep-2014 4 – Updated values inTable 4 – Updated description and features in cover page – Minor text changes DocID024327 Rev 4 STW70N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID024327 Rev 4 13/13