STW75N60DM6

STW75N60DM6, STWA75N60DM6 Datasheet N-channel 600 V, 32 mΩ typ., 72 A MDmesh DM6 Power MOSFETs in TO-247 and TO-247 long leads packages Features Order codes STW75N60DM6 1 2 3 1 2 TO-247 long leads TO-247 STWA75N60DM6 3 D(2, TAB) VDS RDS(on) max. ID 600 V 36 mΩ 72 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications G(1) • S(3) AM01476v1_tab Switching applications Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW75N60DM6 STWA75N60DM6 Product summary Order code STW75N60DM6 Marking 75N60DM6 Package TO-247 Packing Tube Order code STWA75N60DM6 Marking 75N60DM6 Package TO-247 long leads Packing Tube DS12280 - Rev 4 - September 2023 For further information contact your local STMicroelectronics sales office. www.st.com STW75N60DM6, STWA75N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 72 A Drain current (continuous) at TC = 100 °C 45 A Drain current (pulsed) 240 A Total power dissipation at TC = 25 °C 446 W dv/dt(2) Peak diode recovery voltage slope 100 V/ns di/dt(2) Peak diode recovery current slope 1000 A/μs dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns TSTG Storage temperature range - 55 to 150 °C Value Unit 0.28 °C/W 50 °C/W Value Unit 9 A 1.7 J VGS ID ID IDM (1) PTOT TJ Parameter Operating junction temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 72 A, VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Table 3. Avalanche characteristics Symbol IAR EAS DS12280 - Rev 4 Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) page 2/14 STW75N60DM6, STWA75N60DM6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current IGSS Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 μA VGS = 0 V, VDS = 600 V, TJ = 125 °C(1) 100 Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 μA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 4 4.75 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 36 A 32 36 mΩ Min. Typ. Max. Unit - 4850 - pF - 380 - pF - 3.5 - pF 3.25 1. Specified by design, not tested in production. Table 5. Dynamic characteristics Symbol Parameter Test conditions Ciss Input capacitance Coes Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 771 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 2.3 - Ω Qg Total gate charge - 117 - nC Qgs Gate-source charge - 24 - nC Qgd Gate-drain charge - 71 - nC VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 480 V, ID = 72 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Switching times Symbol td(on) tr td(off) tf DS12280 - Rev 4 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Current fall time VDD = 300 V, ID = 36 A, RG = 4.7 Ω (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform Min. Typ. Max. Unit - 36 - ns - 107 - ns - 102 - ns - 10 - ns page 3/14 STW75N60DM6, STWA75N60DM6 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 72 A ISDM (1) Source-drain current (pulsed) - 240 A VSD (2) Forward on voltage - 1.6 V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current VGS = 0 V, ISD = 72 A ISD = 72 A, di/dt = 100 A/μs, VDD = 60 V, (see Figure 15. Test circuit for inductive load switching and diode recovery times) ISD = 72 A, di/dt = 100 A/μs, VDD = 60 V, TJ = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 140 ns - 0.7 µC - 10 A - 260 ns - 3.1 µC - 24 A 1. Pulse width is limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DS12280 - Rev 4 page 4/14 STW75N60DM6, STWA75N60DM6 Electrical characteristics (curves) 3 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Thermal impedance GIPG160720181119SOA AM09125v1 K Operation in this area is limited by R DS(on) d=0.5 10 2 0.2 0.1 0.05 -1 10 10 1 tp =100 µs TJ≤150 °C TC=25 °C VGS=10 V single pulse 10 0 10 -1 10 -1 10 0 10 1 tp =1 ms tp =10 ms VDS (V) 10 2 tp t -2 10 -4 10 VGS =7 V 120 80 VGS =6 V 40 2 4 6 8 10 40 VGS =5 V 12 VDS (V) Figure 5. Gate charge vs gate-source voltage VGS (V) GIPG160720181118QVG VDS (V) VDD = 480 V ID = 72 A 12 RDS(on) (mΩ) 500 34 8 400 33 6 300 32 4 200 31 2 100 30 0 Qg (nC) 29 0 VDS 20 40 60 80 100 120 5 6 7 8 9 VGS (V) Figure 6. Static drain-source on-resistance 35 0 0 DS12280 - Rev 4 0 4 600 10 VDS =12 V 160 80 0 0 t p(s) 10 GIPG160720181117TCH 200 VGS =8 V 120 -1 10 10 ID (A) VGS = 9, 10 V 160 -2 -3 Figure 4. Transfer characteristics GIPG160720181117OCH 200 Zth =k * RthJC d=t p/t Single pulse Figure 3. Output characteristics ID (A) 0.02 0.01 GIPG160720181115RID VGS = 10 V 10 20 30 40 50 60 70 ID (A) page 5/14 STW75N60DM6, STWA75N60DM6 Electrical characteristics (curves) Figure 7. Capacitance variations C (pF) GIPG160720181116CVR 10 4 Figure 8. Normalized gate threshold voltage vs temperature VGS(th) (norm.) CISS GIPG160720181105VTH ID =250 μA 1.1 1.0 10 3 COSS 10 2 f = 1 MHz 10 1 CRSS 0.9 0.8 0.7 10 0 10 -1 10 0 10 1 VDS (V) 10 2 Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) GIPG160720181114RON VGS = 10 V 2.5 0.6 -75 1.00 1.0 0.95 0.5 0.90 75 125 TJ(°C) Figure 11. Output capacitance stored energy E (µJ) GADG160720181346EOS 1.0 32 0.9 24 0.8 16 0.7 8 0.6 DS12280 - Rev 4 300 400 500 600 VDS (V) 25 75 VSD (V) 40 200 -25 TJ (°C) 125 Figure 12. Source-drain diode forward characteristics 1.1 100 TJ (°C) ID = 1 mA 0.85 -75 48 0 0 125 GIPG160720181115BDV 1.10 1.5 25 75 V(BR)DSS (norm.) 1.05 -25 25 Figure 10. Normalized V(BR)DSS vs temperature 2.0 0.0 -75 -25 0.5 0 GIPG160720181116SDF Tj = -50 °C Tj = 25 °C Tj = 150 °C 10 20 30 40 50 60 70 ISD (A) page 6/14 STW75N60DM6, STWA75N60DM6 Test circuits 4 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 16. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS12280 - Rev 4 10% 0 ID VDS 10% 90% 10% AM01473v1 page 7/14 STW75N60DM6, STWA75N60DM6 Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 5.1 TO-247 package information Figure 19. TO-247 package outline aaa 0075325_10 DS12280 - Rev 4 page 8/14 STW75N60DM6, STWA75N60DM6 TO-247 package information Table 8. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 aaa DS12280 - Rev 4 Typ. 5.50 5.70 0.04 0.10 page 9/14 STW75N60DM6, STWA75N60DM6 TO-247 long leads package information 5.2 TO-247 long leads package information Figure 20. TO-247 long leads package outline 8463846_5 DS12280 - Rev 4 page 10/14 STW75N60DM6, STWA75N60DM6 TO-247 long leads package information Table 9. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 M 0.35 P 3.50 Q 5.60 S 6.05 aaa DS12280 - Rev 4 4.30 0.95 3.60 3.70 6.00 6.15 6.25 0.04 0.10 page 11/14 STW75N60DM6, STWA75N60DM6 Revision history Table 10. Document revision history Date Revision 16-Oct-2017 1 Changes First release. Modified Table 1. Absolute maximum ratings, Table 3. Avalanche characteristics, 03-Aug-2018 2 Table 4. On/off states, Table 5. Dynamic characteristics, Table 6. Switching times and Table 7. Source drain diode. Added Section 3 Electrical characteristics (curves). Minor text changes. 21-Jul-2020 3 Updated Table 1. Absolute maximum ratings. Updated Table 1. Absolute maximum ratings. Updated Table 2. Thermal data. 26-Sep-2023 4 Updated Table 4. On/off states. Updated Section 5 Package information. Minor text changes. DS12280 - Rev 4 page 12/14 STW75N60DM6, STWA75N60DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS12280 - Rev 4 page 13/14 STW75N60DM6, STWA75N60DM6 IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2023 STMicroelectronics – All rights reserved DS12280 - Rev 4 page 14/14