STW77N65M5

STW77N65M5 N-channel 650 V, 0.033 Ω, 69 A, MDmesh™ V Power MOSFET TO-247 Features Order code VDSS @Tjmax. RDS(on) max. ID STW77N65M5 710 V < 0.038 Ω 69 A ■ Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested 2 3 1 TO-247 Application Switching applications Figure 1. Internal schematic diagram Description $ This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STW77N65M5 77N65M5 TO-247 Tube February 2011 Doc ID 15322 Rev 3 1/14 www.st.com 14 Contents STW77N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/14 .............................................. 9 Doc ID 15322 Rev 3 STW77N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage 25 V ID Drain current (continuous) at TC = 25 °C 69 A ID Drain current (continuous) at TC = 100 °C 41.5 A IDM (1) Drain current (pulsed) 276 A PTOT Total dissipation at TC = 25 °C 400 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 15 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 2000 mJ 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.31 °C/W 50 °C/W 300 °C VGS Parameter dv/dt (2) Peak diode recovery voltage slope Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 69 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Doc ID 15322 Rev 3 3/14 Electrical characteristics 2 STW77N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.033 0.038 Ω Min. Typ. Max. Unit VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 34.5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 9800 200 6 - pF pF pF Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 590 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 194 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.2 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 34.5 A, VGS = 10 V (see Figure 16) - 185 45 65 - nC nC nC Ciss Coss Crss 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/14 Doc ID 15322 Rev 3 STW77N65M5 Electrical characteristics Table 6. Symbol td(V) tr(V) tf(i) tc(off) Table 7. Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) (see Figure 20) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 160 22 20 40 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 69 276 A A ISD = 69 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 69 A, di/dt = 100 A/µs VDD = 100 V (see Figure 17) - 570 14 48 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 69 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 17) - 700 20 58 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15322 Rev 3 5/14 Electrical characteristics STW77N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM04964v1 ID (A) 10µs D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 100 10 100µs 1ms 10ms Tj=150°C Tc=25°C 1 Single pulse 0.1 0.1 Figure 4. 10 1 VDS(V) 100 Output characteristics AM04965v1 ID (A) VGS=10V 140 AM04966v1 ID (A) VDS=25V 140 7V 120 120 100 100 80 80 60 60 6V 40 40 20 20 5V 0 0 Figure 6. 5 10 15 20 25 0 0 VDS(V) 30 Gate charge vs gate-source voltage Figure 7. AM04969v1 VGS (V) VGS VDD=520V 12 VDS ID=34.5A 2 4 500 400 0.030 300 0.025 200 0.020 100 0.015 10 VGS(V) Static drain-source on resistance AM04968v1 RDS(on) (Ω) 0.035 8 6 VGS=10V 10 8 6 4 2 0 0 6/14 50 100 150 200 0 Qg(nC) 0.01 0 Doc ID 15322 Rev 3 10 20 30 40 50 60 ID(A) STW77N65M5 Figure 8. Electrical characteristics Capacitance variations Figure 9. AM04970v1 C (pF) Output capacitance stored energy AM04971v1 Eoss (µJ) 40 100000 35 10000 Ciss 30 25 1000 20 Coss 100 15 10 10 Crss 1 0.1 1 10 100 5 0 0 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM04972v1 VGS(th) (norm) 1.10 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on resistance vs temperature AM05501v1 RDS(on) (norm) 2.1 ID= 34.5 A 1.9 VGS= 10 V 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics 0 25 50 75 100 125 TJ(°C) Figure 13. Normalized BVDSS vs temperature AM04974v1 VSD (V) 0.5 -50 -25 TJ=-50°C 1.2 AM04967v1 BVDSS (norm) 1.07 ID = 1mA 1.05 1.0 1.03 0.8 TJ=25°C 0.6 1.01 0.99 TJ=150°C 0.4 0.97 0.2 0.95 0 0 10 20 30 40 50 ISD(A) 0.93 -50 -25 Doc ID 15322 Rev 3 0 25 50 75 100 TJ(°C) 7/14 Electrical characteristics STW77N65M5 Figure 14. Switching losses vs gate resistance (1) AM04973v1 E (µJ) Eoff 1600 VDD=400V VGS=10V 1400 TJ=25°C ID=40A 1200 Eon 1000 800 600 400 200 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/14 Doc ID 15322 Rev 3 STW77N65M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 20. Switching time waveform #ONCEPTWAVEFORMFOR)NDUCTIVE,OAD4URN OFF )D VD )D 6DS 4DELAY OFF OFF IDM 6GS 6GS ON ID 6GS)T VDD VDD 6DS )D 6DS 4R ISE AM01472v1 Doc ID 15322 Rev 3 4FALL 4CROSS OVER !-V 9/14 Package mechanical data 4 STW77N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/14 Doc ID 15322 Rev 3 STW77N65M5 Package mechanical data Table 8. TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 15322 Rev 3 11/14 Package mechanical data STW77N65M5 Figure 21. TO-247 drawing 0075325_F 12/14 Doc ID 15322 Rev 3 STW77N65M5 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 20-Jan-2009 1 First release. 14-Jul-2009 2 Document status promoted from preliminary data to datasheet. 03-Feb-2011 3 Section 2.1: Electrical characteristics (curves) has been updated. Doc ID 15322 Rev 3 13/14 STW77N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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