STW78N65M5

STW78N65M5 Automotive-grade N-channel 650 V, 0.024 Ω typ., 69 A, MDmesh™ V Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS @Tjmax. RDS(on) max. ID STW78N65M5 710 V 0.032 Ω 69 A • Designed for automotive applications and AEC-Q101 qualified 2 3 • Higher VDSS rating 1 • Higher dv/dt capability • Excellent switching performance TO-247 • Easy to drive • 100% avalanche tested Figure 1. Internal schematic diagram Applications • Switching applications ' Description * 6 $0Y This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STW78N65M5 78N65M5 TO-247 Tube August 2013 This is information on a product in full production. DocID023457 Rev 4 1/14 www.st.com Contents STW78N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 9 DocID023457 Rev 4 STW78N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 69 A ID Drain current (continuous) at TC = 100 °C 41.5 A IDM (1) Drain current (pulsed) 276 A PTOT VGS Parameter Total dissipation at TC = 25 °C 450 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C 150 °C Value Unit 0.28 °C/W 50 °C/W Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 69 A, di/dt = 400 A/µs, VDS peak < V(BR)DSS, VDD = 400 V 3. VDS ≤ 520 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 15 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 2000 mJ DocID023457 Rev 4 3/14 14 Electrical characteristics 2 STW78N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage (VGS = 0) Test conditions ID = 1 mA Min. Typ. Max. Unit 650 V IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 4 5 V 0.024 0.032 Ω Min. Typ. Max. Unit - 9000 - pF - 210 - pF - 9 - pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 34.5 A resistance 3 Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 768 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 205 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.5 - Ω Qg Total gate charge - 203 - nC Qgs Gate-source charge - 50 - nC Qgd Gate-drain charge VDD = 520 V, ID = 34.5 A, VGS = 10 V (see Figure 16) - 84 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/14 DocID023457 Rev 4 STW78N65M5 Electrical characteristics Table 7. Switching times Symbol Parameter td(V) Voltage delay time tr(V) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) (see Figure 20) Crossing time Min. Typ. Max. Unit - 163 - ns - 14 - ns - 14 - ns - 26 - ns Min. Typ. Table 8. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 69 A ISDM (1) Source-drain current (pulsed) - 276 A VSD (2) Forward on voltage - 1.5 V ISD ISD = 69 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 69 A, di/dt = 100 A/µs VDD = 100 V (see Figure 17) ISD = 69 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 17) - 504 ns - 13 µC - 49 A - 635 ns - 19 µC - 59 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID023457 Rev 4 5/14 14 Electrical characteristics 2.1 STW78N65M5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15574v1 10 D S( on ) 100 O Li per m at ite io d ni by n m this ax a R rea is ID (A) 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse 1 0.1 0.1 10 1 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM10393v1 ID (A) VDS=30V 225 VGS=10V 250 AM10394v1 ID (A) 200 8V 175 200 150 125 150 7V 100 100 75 50 50 6V 0 0 5 10 15 20 25 VDS(V) Figure 6. Gate charge vs gate-source voltage AM15575v1 VGS (V) 25 0 3 4 6 7 8 9 VGS(V) Figure 7. Static drain-source on-resistance AM10396v1 RDS(on) (Ω) VGS=10V VDD=520V ID=34.5A 12 5 0.026 10 8 0.024 6 4 0.022 2 0 0 6/14 50 100 150 200 250 Qg(nC) 0.020 0 DocID023457 Rev 4 10 20 30 40 50 60 70 80 ID(A) STW78N65M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM15577v1 C (pF) AM10398v1 Eoss (µJ) 40 100000 35 10000 Ciss 30 25 1000 20 Coss 100 15 10 10 Crss 5 1 0.1 1 100 10 0 0 1000 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM04972v1 VGS(th) (norm) 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on-resistance vs temperature AM15573v1 RDS(on) (norm) ID=250µA 1.10 VDS=10 V ID=34.5 A 2.5 VDS=VGS 2 1.00 1.5 0.90 1 0.80 0.5 0.70 -50 -25 0 25 50 75 100 Figure 12. Source-drain diode forward characteristics AM04974v1 VSD (V) 0 -55 TJ(°C) 5 -25 35 65 95 125 TJ(°C) Figure 13. Normalized VDS vs temperature AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 0.6 TJ=150°C 1.00 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 DocID023457 Rev 4 0 25 50 75 100 TJ(°C) 7/14 14 Electrical characteristics STW78N65M5 Figure 14. Switching losses vs gate resistance (1) AM15576v1 E (µJ) VDD=400V VGS=10V ID=40A 2500 Eon 2000 1500 Eoff 1000 500 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/14 DocID023457 Rev 4 STW78N65M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform V(BR)DSS Figure 20. Switching time waveform &RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII ,G VD 9GV ,G 7GHOD\RII RII IDM 9JV 9JV RQ ID 9JV,W  VDD VDD ,G 9GV 9GV 7ULVH AM01472v1 DocID023457 Rev 4 7IDOO 7FU RVV RYHU  $0Y 9/14 14 Package mechanical data 4 STW78N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/14 DocID023457 Rev 4 STW78N65M5 Package mechanical data Table 9. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID023457 Rev 4 5.70 11/14 14 Package mechanical data STW78N65M5 Figure 21. TO-247 drawing 0075325_G 12/14 DocID023457 Rev 4 STW78N65M5 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 16-Jul-2012 1 First release. 22-Jan-2013 2 Modified: RDS(on) on first page, ID, IDM on Table 2, note 2 on Table 2, typical values on Table 6, 7, max and typical values on Table 8, Figure 2, 6, 8, 9, 11 and 14 07-Aug-2013 3 – – – – – 08-Aug-2013 4 – Minor text changes – Modified: Figure 14 Minor text changes Modified: Applications in first page Added: MOSFET dv/dt ruggedness parameter in Table 2 Added: Table 4: Avalanche characteristics Modified: Figure 15, 16, 17 and 18 DocID023457 Rev 4 13/14 14 STW78N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 DocID023457 Rev 4