STW80N06-10

® STW80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA T YPE STW80N06-10 s s s s s s s s V DSS 60 V R DS(on) < 0.010 Ω ID 80 A TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION 1 2 3 TO-247 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCRONOUS RECTIFICATION s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM ( • ) P tot dV/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0 ) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 2 5 C Drain Current (continuous) at T c = 1 00 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 60 60 ± 20 80 60 320 180 1.2 5 -65 to 175 175 Unit V V V A A A W W/ o C V/ns o o C C (•) Pulse width limited by safe operating area October 1998 1/5 STW80N06-10 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.83 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IAR E AS E AR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m ax, δ < 1 %) Single Pulse Avalanche Energy (starting T j = 2 5 o C, I D = I AR , V DD = 2 5 V) Repetitive Avalanche Energy (pulse width limited by T j m ax, δ < 1 %) Avalanche Current, Repetitive or Not-Repetitive (T c = 1 00 o C, pulse width limited by T j m ax, δ < 1 %) Max Value 60 600 150 42 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A V GS = 0 Min. 60 10 100 ± 1 00 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating x 0.8 Gate-body Leakage Current (V DS = 0 ) V GS = ± 20 V T c = 1 25 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 2 50 µ A T c = 1 00 o C 80 Min. 2 Typ. 3 0.0085 Max. 4 0.01 0.02 Unit V Ω Ω A V GS = 1 0V I D = 4 0 A V GS = 1 0V I D = 4 0 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz ID = 40 A V GS = 0 Min. Typ. 25 5900 900 230 Max. Unit S pF pF pF 2/5 STW80N06-10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 3 0 V ID = 4 0 A R G = 4 .7 Ω V GS = 1 0 V (see test circuit, figure 3) V DD = 4 8 V I D = 80 A RG = 50 Ω V GS = 1 0 V (see test circuit, figure 5) V DD = 4 0 V ID = 80 A V GS = 1 0 V Min. Typ. 32 160 240 Max. 42 200 Unit ns ns A/ µ s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 230 30 60 280 nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 4 8 V I D = 4 0 A R G = 4 .7 Ω VGS = 1 0 V (see test circuit, figure 5) Min. Typ. 35 175 240 Max. 46 230 300 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 80 A V GS = 0 I SD = 8 0 A di/dt = 100 A/ µ s V DD = 3 0 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 80 320 1.5 125 0.6 10 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area (1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 3/5 STW80N06-10 TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 4/5 STW80N06-10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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