STW80NE06-10

STW80NE06-10 N-CHANNEL 60V - 0.0085Ω - 80A TO-247 STripFET™ POWER MOSFET TYPE STW80NE06-10 ■ ■ ■ ■ VDSS RDS(on) ID 60 V < 0.01 Ω 80 A(*) TYPICAL RDS(on) = 0.0085Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 2 1 TO-247 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ DC-DC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ SOLENOID AND RELAY DRIVERS ■ AUTOMOTIVE ENVIRONMENT ) s ( ct o r P INTERNAL SCHEMATIC DIAGRAM e t le o s b O - u d o r P e c u d ) s t( ABSOLUTE MAXIMUM RATINGS Symbol VDGR VGS s b O ID Value Unit Drain-source Voltage (VGS = 0) Parameter 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V Gate- source Voltage ±20 V Drain Current (continuos) at TC = 25°C 80 A Drain Current (continuos) at TC = 100°C 57 A Drain Current (pulsed) 320 A Total Dissipation at TC = 25°C 250 W Derating Factor 1.66 W/°C 7 V/ns –65 to 175 °C 175 °C t e l o VDS ID IDM (●) PTOT dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area October 2000 (1) I SD ≤80A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (*) Current limited by package 1/8 STW80NE06-10 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.6 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Rthj-sink Thermal Resistance Case-sink Typ 0.1 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 80 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 350 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V V(BR)DSS Min. r P e t le b O - Gate Threshold Voltage RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 40 A ID(on) On State Drain Current DYNAMIC o r P e Symbol gfs (1) c u d Parameter Forward Transconductance t e l o VDS > ID(on) x RDS(on)max, VGS = 10V Test Conditions VDS > ID(on) x RDS(on)max, ID =40 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 2 ) s t( µA od 10 µA ±100 nA Typ. Max. Unit 3 4 V 0.0085 0.01 Ω 80 A Min. Typ. Max. Unit 19 38 S 7600 pF Ciss Input Capacitance Coss Output Capacitance 890 pF Crss Reverse Transfer Capacitance 150 pF s b O 2/8 so Test Conditions VDS = VGS, ID = 250µA (t s) uc 1 VGS(th) Unit V VDS = Max Rating, TC = 125 °C Parameter Max. 60 ON (1) Symbol Typ. STW80NE06-10 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Test Conditions Min. VDD = 30V, ID = 40A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) Turn-on Delay Time Rise Time VDD = 48V, ID = 40A, VGS = 10V Typ. Max. Unit 50 ns 150 ns Qg Total Gate Charge Qgs Gate-Source Charge 20 nC Qgd Gate-Drain Charge 50 nC 140 189 nC SWITCHING OFF Symbol td(off) Parameter Test Conditions Min. Typ. Off-voltage Rise Time VDD = 48 V, ID =40 A RG = 4.7Ω, VGS = 10V 45 tf Fall Time (see test circuit, Figure 5) 75 tc Cross-over Time ISD ns 130 Parameter Test Conditions Source-drain Current ISDM (1) Source-drain Current (pulsed) VSD (2) Forward On Voltage ISD = 80A, VGS = 0 trr Reverse Recovery Time ISD = 80A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) Qrr Reverse Recovery Charge IRRM Reverse Recovery Current so ) s ( ct Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. u d o r P e Safe Operating Area e t le b O - Typ. ) s t( ns c u d o r P Min. Unit ns SOURCE DRAIN DIODE Symbol Max. Max. Unit 80 A 320 A 1.5 V 100 ns 0.4 nC 8 A Thermal Impedence t e l o s b O 3/8 STW80NE06-10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance c u d e t le ) s ( ct u d o r P e Gate Charge vs Gate-source Voltage t e l o s b O 4/8 o r P o s b O - Capacitance Variations ) s t( STW80NE06-10 Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature c u d e t le ) s ( ct ) s t( Normalized Drain-Source Breakdown vs Temperature o r P o s b O - u d o r P e t e l o s b O 5/8 STW80NE06-10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit c u d e t le ) s ( ct u d o o s b O - Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times r P e t e l o s b O 6/8 o r P ) s t( STW80NE06-10 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 L 19.7 20.3 0.776 L3 14.2 14.8 0.559 L4 34.6 L5 5.5 M 2 uc 0.779 d o r 1.362 P e let 0.582 0.217 3 ) s ( ct ) s t( 0.626 0.079 0.118 o s b O - u d o r P e t e l o s b O P025P 7/8 STW80NE06-10 c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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