STW80NF10

N-CHANNEL 100V - 0.012Ω - 80A TO-247 LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STW80NF10 s s s s STW80NF10 VDSS 100 V RDS(on) < 0.015 Ω ID 80 A TYPICAL RDS(on) = 0.012Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 1 3 TO-247 DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (*) ID IDM (q) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ±20 80 50 320 300 2 9 245 –65 to 175 175 (1) I SD ≤80A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j = 25°C, I D = 80A, VDD = 50V Unit V V V A A A W W/°C V/ns mJ °C °C (q) Pulse width limited by safe operating area (*) Limited by wire bonding April 2001 1/8 STW80NF10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.5 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±20V Min. 100 1 10 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 40 A VDS > ID(on) x RDS(on)max, VGS = 10V 80 Min. 2 Typ. 3 0.012 Max. 4 0.015 Unit V Ω A DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =40 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 20 4300 600 240 Max. Unit S pF pF pF 2/8 STW80NF10 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 50V, ID = 40A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 80V, ID = 80A, VGS = 10V Min. Typ. 40 145 140 23 51 189 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) Parameter Turn-off-Delay Time Test Conditions VDD = 27V, ID = 40A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Vclamp =80V, ID =80A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 134 Max. Unit ns tf td(off) tf tc Symbol ISD ISDM (1) VSD (2) trr Fall Time Off-voltage Rise Time Fall Time Cross-over Time Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time ISD = 80A, VGS = 0 ISD = 80A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) Test Conditions Min. 115 111 125 185 Typ. Max. 80 320 1.5 155 ns ns ns ns Unit A A V ns SOURCE DRAIN DIODE Qrr IRRM Reverse Recovery Charge Reverse Recovery Current 850 11 nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 STW80NF10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STW80NF10 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW80NF10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW80NF10 TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 7/8 STW80NF10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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