STW88N65M5

STW88N65M5 STWA88N65M5 N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDSS @Tjmax. RDS(on) max. ID 710 V 0.029 Ω 84 A STW88N65M5 STWA88N65M5 2 3 • Worldwide best RDS(on) in TO-247 1 • Higher VDSS rating TO-247 TO-247 long leads • Higher dv/dt capability • Excellent switching performance • Easy to drive Figure 1. Internal schematic diagram • 100% avalanche tested Applications ' • High efficiency switching applications: – Servers – PV inverters – Telecom infrastructure – Multi kW battery chargers * Description 6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages STW88N65M5 TO-247 88N65M5 STWA88N65M5 July 2014 This is information on a product in full production. Packaging Tube TO-247 long leads DocID022522 Rev 5 1/16 www.st.com 16 Contents STW88N65M5, STWA88N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 DocID022522 Rev 5 STW88N65M5, STWA88N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 84 A ID Drain current (continuous) at TC = 100 °C 50.5 A IDM (1) Drain current (pulsed) 336 A PTOT Total dissipation at TC = 25 °C 450 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 15 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 2000 mJ 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.28 °C/W 50 °C/W VGS Parameter dv/dt (2) Peak diode recovery voltage slope Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 84 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID022522 Rev 5 3/16 Electrical characteristics 2 STW88N65M5, STWA88N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. Unit 650 V VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA VDS = 0, VGS = ± 25 V ± 100 nA 4 5 V 0.024 0.029 Ω Min. Typ. Max. Unit - 8825 - pF - 223 - pF - 11 - pF VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on- resistance 3 VGS = 10 V, ID = 42 A Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 778 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 202 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.79 - Ω Qg Total gate charge - 204 - nC Qgs Gate-source charge - 51 - nC Qgd Gate-drain charge VDD = 520 V, ID = 42 A, VGS = 10 V (see Figure 16) - 84 - nC VGS = 0, VDS = 100 V, f = 1 MHz 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/16 DocID022522 Rev 5 STW88N65M5, STWA88N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter td(V) Voltage delay time tr(V) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 56 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) (see Figure 20) Crossing time Min. Typ. Max. Unit - 141 - ns - 16 - ns - 29 - ns - 56 - ns Min. Typ. Table 7. Source drain diode Symbol ISD Parameter Test conditions Source-drain current ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 84 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 84 A, di/dt = 100 A/µs VDD = 100 V (see Figure 17) ISD = 84 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 17) Max. Unit - 84 A - 336 A - 1.5 V - 544 ns - 14 µC - 50 A - 660 ns - 20 µC - 60 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID022522 Rev 5 5/16 Electrical characteristics 2.1 STW88N65M5, STWA88N65M5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM10392v1 ID (A) 10 D S( on ) 100 O Li per m at ite io d ni by n m this ax a R rea is Tj=150°C Tc=25°C Single pulse 10µs 100µs 1ms 10ms 1 0.1 0.1 10 1 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM10393v1 ID (A) VGS=9, 10V 250 AM10394v1 ID (A) VDS=30V 250 225 200 8V 200 175 150 7V 150 125 100 100 75 50 50 6V 0 0 5 10 20 15 25 25 0 VDS(V) Figure 6. Gate charge vs gate-source voltage AM10395v1 VGS (V) VDS (V) VDD=520V ID=42A 14 VDS 3 4 5 6 7 8 9 VGS(V) Figure 7. Static drain-source on resistance AM10396v1 RDS(on) (Ω) VGS=10V 500 0.026 12 400 10 8 300 6 0.024 200 0.022 4 100 2 0 0 6/16 50 100 150 200 0 Qg(nC) 0.020 0 DocID022522 Rev 5 10 20 30 40 50 60 70 80 ID(A) STW88N65M5, STWA88N65M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM10397v1 C (pF) AM10398v1 Eoss (µJ) 40 100000 35 10000 Ciss 30 25 1000 20 Coss 100 15 10 Crss 10 5 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM04972v1 VGS(th) (norm) 0 0 VDS(V) 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on-resistance vs temperature AM05501v2 RDS(on) (norm) ID=250µA 2.1 1.10 ID= 42 A 1.9 VGS= 10 V 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04974v1 VSD (V) 0.5 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 13. Normalized V(BR)DSS vs temperature AM10399v1 V(BR)DSS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 0.6 TJ=150°C 1.00 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 DocID022522 Rev 5 0 25 50 75 100 TJ(°C) 7/16 Electrical characteristics STW88N65M5, STWA88N65M5 Figure 14. Switching losses vs gate resistance (1) AM11171v1 E (μJ) Eon VDD=400V VGS=10V TJ=25°C 3000 ID=56A Eoff 2000 1000 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/16 DocID022522 Rev 5 STW88N65M5, STWA88N65M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform V(BR)DSS Figure 20. Switching time waveform &RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII ,G VD 9GV ,G 7GHOD\RII RII IDM 9JV 9JV RQ ID 9JV,W  VDD VDD ,G 9GV 9GV 7ULVH AM01472v1 DocID022522 Rev 5 7IDOO 7FU RVV RYHU  $0Y 9/16 Package mechanical data 4 STW88N65M5, STWA88N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID022522 Rev 5 STW88N65M5, STWA88N65M5 Package mechanical data Figure 21. TO-247 drawing 0075325_G DocID022522 Rev 5 11/16 Package mechanical data STW88N65M5, STWA88N65M5 Table 8. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 12/16 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID022522 Rev 5 5.70 STW88N65M5, STWA88N65M5 Package mechanical data Figure 22. TO-247 long leads drawing 7395426_G DocID022522 Rev 5 13/16 Package mechanical data STW88N65M5, STWA88N65M5 Table 9. TO-247 long leads mechanical data mm Dim. Min. Typ. A 4.90 5.15 D 1.85 2.10 E 0.55 0.67 F 1.07 1.32 F1 1.90 2.38 F2 2.87 3.38 G 10.90 BSC H 15.77 16.02 L 20.82 21.07 L1 4.16 4.47 L2 5.49 5.74 L3 20.05 20.30 L4 3.68 3.93 L5 6.04 6.29 M 2.25 2.55 V 10° V1 3° V3 20° Dia. 14/16 Max. 3.55 3.66 DocID022522 Rev 5 STW88N65M5, STWA88N65M5 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 23-Nov-2011 1 First release. 09-Dec-2011 2 Document status promoted from preliminary data to datasheet. 12-Jun-2012 3 Updated title on the cover page. 30-Nov-2012 4 Added new part number: STWA88N65M5 Updated: Section 4: Package mechanical data 16-Jul-2014 5 – Updated: Figure 4 and 5 – Minor text changes DocID022522 Rev 5 15/16 STW88N65M5, STWA88N65M5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 16/16 DocID022522 Rev 5