STW9NC80Z

N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW9NC80Z n n n n n n STW9NC80Z VDSS 800 V RDS(on) ID(on) x RDS(on)max, VGS = 10V 9.4 Min. 3 Typ. 4 0.82 Max. 5 0.9 Unit V Ω A DYNAMIC Symbol gfs Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =4.7A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 13 3500 230 25 Max. Unit S pF pF pF 2/8 STW9NC80Z ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON (RESISTIVE LOAD) Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 400V, ID = 4.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 640V, ID = 9 A, VGS = 10V Min. Typ. 35 16 72.2 19.5 24.3 101 Max. Unit ns ns nC nC nC SWITCHING OFF (INDUCTIVE LOAD) Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 640V, ID = 9 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 32 42 67 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 9 A, VGS = 0 ISD = 9 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 730 7.2 19.5 Test Conditions Min. Typ. Max. 9.4 38 1.6 Unit A A V ns µC A GATE-SOURCE ZENER DIODE Symbol BVGSO αT Rz Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Dynamic Resistance Test Conditions Igs=± 1mA (Open Drain) T=25°C Note(3) IGS = 50 mA, VGS = 0 Min. 25 1.3 90 Typ. Max. Unit V 10-4/°C Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW9NC80Z Safe Operating Area For TO-247 Thermal Impedance For TO-247 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/8 STW9NC80Z Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW9NC80Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW9NC80Z TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 7/8 STW9NC80Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8