STWA20N95DK5

STW20N95DK5, STWA20N95DK5 Datasheet N-channel 950 V, 275 mΩ typ., 18 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages Features Order code STW20N95DK5 STWA20N95DK5 1 2 3 1 2 RDS(on) max. ID 950 V 330 mΩ 18 A 3 TO-247 long leads TO-247 VDS D(2, TAB) • • Fast-recovery body diode Best RDS(on) x area • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Applications • Switching applications G(1) Description S(3) AM01475v1_noZen These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on) * area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters. Product status links STW20N95DK5 STWA20N95DK5 Product summary Order code STW20N95DK5 Marking 20N95DK5 Package TO-247 Packing Tube Order code STWA20N95DK5 Marking 20N95DK5 Package TO-247 long leads Packing Tube DS12132 - Rev 3 - August 2021 For further information contact your local STMicroelectronics sales office. www.st.com STW20N95DK5, STWA20N95DK5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±30 V Drain current (continuous) at TC = 25 °C 18 Drain current (continuous) at TC = 100 °C 11 IDM(1) Drain current (pulsed) 72 A PTOT Total power dissipation at TC = 25 °C 250 W dv/dt(2) Peak diode recovery voltage slope 50 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature range VGS ID TJ Parameter Operating junction temperature range -55 to 150 A °C °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 18 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 760 V. 3. VDS ≤ 760 V. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance, junction-to-case 0.5 °C/W RthJA Thermal resistance, junction-to-ambient 50 °C/W Value Unit 6 A 520 mJ Table 3. Avalanche characteristics Symbol DS12132 - Rev 3 Parameter IAR Maximum current during repetitive or single pulse avalanche EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR ,VDD = 50 V) page 2/15 STW20N95DK5, STWA20N95DK5 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. ID = 1 mA, VGS = 0 V Typ. 950 Zero gate voltage drain current IGSS Gate source leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDD = VGS, ID = 100 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 9 A VGS = 0 V, VDS = 950 V, TC = 125 Unit V VGS = 0 V, VDS = 950 V IDSS Max. 1 µA 100 µA ±10 µA 4 5 V 275 330 mΩ Min. Typ. Max. Unit - 1600 - pF - 76 - pF - 5 - pF - 169 - pF - 60 - pF - 4 - Ω - 50.7 - nC - 7.8 - nC - 34.2 - nC °C(1) 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate source charge Qgd Gate drain charge Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V VGS = 0 V, VDS = 0 to 760 V f = 1 MHz, ID = 0 A VDD = 760 V, ID = 18 A, VGS = 0 to 10 V (see Figure 15. Test circuit for gate charge behavior) 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12132 - Rev 3 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDS = 475 V, ID= 9 A, - 23 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 23 - ns Turn-off delay time (see Figure 14. Test circuit for resistive load switching times and Figure 19. Switching time waveform) - 74 - ns - 25.4 - ns Fall time page 3/15 STW20N95DK5, STWA20N95DK5 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 18 A Source-drain current (pulsed) - 72 A 1.5 V Forward on voltage ISD = 18 A, VGS = 0 V - trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs, - 150 ns Qrr Reverse recovery charge VDD = 60 V - 1 µC IRRM Reverse recovery current (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 13.5 A trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs, - 264 ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 2.9 µC Reverse recovery current (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 22 A IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS12132 - Rev 3 page 4/15 STW20N95DK5, STWA20N95DK5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Thermal impedance GC18460 GIPG061120171029SOA ) DS (on O is pera lim tio ite n i db nt y R his a rea tp =10 µs 101 tp =100 µs TJ ≤ 150 °C, TC = 25 °C, Single pulse 100 100 101 tp =1 ms tp =10 ms VDS (V) 102 Figure 4. Transfer characteristics Figure 3. Output characteristics ID (A) ID (A) GIPG051220171104OCH VGS = 9, 10, 11 V 40 8V 32 GIPG051220171103TCH 40 VDS = 20 V 32 24 24 7V 16 16 8 8 6V 0 0 4 8 12 16 VDS (V) Figure 5. Gate charge vs gate-source voltage VGS (V) GIPG061120171013QVG VDS (V) VDD = 760 V ID = 18 A 0 4 750 315 8 600 295 6 450 275 4 300 255 2 150 235 0 Qg (nC) 215 0 0 0 DS12132 - Rev 3 VDS 10 20 30 40 50 7 RDS(on) (mΩ) 335 10 6 8 9 VGS (V) Figure 6. Static drain-source on-resistance 900 12 5 GIPG051220171049RID VGS = 10 V 3 6 9 12 15 18 ID (A) page 5/15 STW20N95DK5, STWA20N95DK5 Electrical characteristics (curves) Figure 7. Capacitance variations C (pF) Figure 8. Output capacitance stored energy EOSS (µJ) GIPG061120171011CVR GIPG061120171011EOS 24 104 20 Ciss 103 16 12 102 Coss f = 1 MHz 101 100 10-1 Crss 100 101 102 VDS (V) Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GIPG061120171017VTH 4 0 0 150 300 450 600 750 900 VDS (V) Figure 10. Normalized on-resistance vs temperature RDS(on) (norm.) GIPG061120171020RON 2.4 ID = 100 µA 1.1 8 VGS = 10 V 2.0 1.0 1.6 0.9 1.2 0.8 0.8 0.7 0.4 0.6 -75 -25 25 75 125 TJ (°C) Figure 11. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) 1.12 GIPG061120171016BDV 0.0 -75 -25 25 75 1.08 TJ (°C) Figure 12. Source-drain diode forward characteristics VSD (V) GIPG061120171018SDF TJ = -50 °C 1.1 ID = 1 mA 125 1.0 1.04 TJ = 25 °C 0.9 1.00 0.8 0.96 0.7 0.92 0.88 -75 DS12132 - Rev 3 TJ = 150 °C -25 25 75 125 TJ (°C) 0.6 4 8 12 16 ISD (A) page 6/15 STW20N95DK5, STWA20N95DK5 Electrical characteristics (curves) Figure 13. Maximum avalanche energy vs starting TJ EAS (mJ) GIPG061120171021EAS 500 400 300 200 100 0 -75 DS12132 - Rev 3 Single pulse ID = 6 A VDD =50 V -25 25 75 125 TJ (°C) page 7/15 STW20N95DK5, STWA20N95DK5 Test circuits 3 Test circuits Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 17. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS12132 - Rev 3 10% 0 ID VDS 10% 90% 10% AM01473v1 page 8/15 STW20N95DK5, STWA20N95DK5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 20. TO-247 package outline aaa 0075325_10 DS12132 - Rev 3 page 9/15 STW20N95DK5, STWA20N95DK5 TO-247 package information Table 8. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 aaa DS12132 - Rev 3 Typ. 5.50 5.70 0.04 0.10 page 10/15 STW20N95DK5, STWA20N95DK5 TO-247 long leads package information 4.2 TO-247 long leads package information Figure 21. TO-247 long leads package outline 8463846_3 DS12132 - Rev 3 page 11/15 STW20N95DK5, STWA20N95DK5 TO-247 long leads package information Table 9. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 P 3.50 Q 5.60 S 6.05 aaa DS12132 - Rev 3 4.30 3.60 3.70 6.00 6.15 6.25 0.04 0.10 page 12/15 STW20N95DK5, STWA20N95DK5 Revision history Table 10. Document revision history Date Revision 10-May-2017 1 Changes Initial release Datasheet promoted from preliminary data to production data. Modified title and features table on cover page 06-Nov-2017 2 Modified Table 2: "Absolute maximum ratings", Table 4: "Thermal data", Table 5: "On/off states", Table 6: "Dynamic", Table 7: "Switching times" and Table 8: "Source-drain diode". Added Section 2.1: "Electrical characteristics (curves)". Minor text changes. Updated Table 1. Absolute maximum ratings. 11-Aug-2021 3 Updated Figure 3. Output characteristics, Figure 4. Transfer characteristics and Figure 6. Static drain-source on-resistance. Updated Section 4 Package information. Minor text changes. DS12132 - Rev 3 page 13/15 STW20N95DK5, STWA20N95DK5 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS12132 - Rev 3 page 14/15 STW20N95DK5, STWA20N95DK5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS12132 - Rev 3 page 15/15