STWA20N95K5
N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5
Power MOSFET in a TO-247 long leads package
Datasheet - production data
Features
PTOT
Order code
VDS
RDS(on) max.
ID
STWA20N95K5
950 V
0.330 Ω
17.5 A
250 W
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Figure 1: Internal schematic diagram
Switching applications
Description
D(2)
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
G(1)
S(3)
AM01476v1_No_tab
Table 1: Device summary
Order code
Marking
Package
Packing
STWA20N95K5
20N95K5
TO-247 long leads
Tube
January 2017
DocID025573 Rev 2
This is information on a product in full production.
1/13
www.st.com
Contents
STWA20N95K5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package information ..................................................................... 10
4.1
5
2/13
TO-247 long leads package information ......................................... 10
Revision history ............................................................................ 12
DocID025573 Rev 2
STWA20N95K5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
VGS
Value
Unit
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
17.5
A
ID
Drain current (continuous) at TC = 100 °C
11
A
ID(1)
Drain current (pulsed)
70
A
PTOT
Total dissipation at TC = 25 °C
250
W
ESD
kV
Gate-source human body model (R= 1.5 kΩ, C = 100 pF)
2
dv/dt
(2)
Peak diode recovery voltage slope
6
dv/dt
(3)
MOSFET dv/dt ruggedness
50
Tj
Operating junction temperature range
Tstg
Storage temperature range
V/ns
-55 to 150
°C
Value
Unit
Notes:
(1)Pulse
(2)I
SD
(3)V
width limited by safe operating area.
≤ 17.5 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS
DS
≤ 760 V
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient
50
°C/W
Value
Unit
6
A
200
mJ
Table 4: Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax.)
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,
VDD = 50 V)
DocID025573 Rev 2
3/13
Electrical characteristics
2
STWA20N95K5
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
Parameter
V(BR)DSS
Drain-source breakdown voltage
Test conditions
Min.
VGS = 0 V, ID = 1 mA
950
Typ.
Max.
Unit
V
VGS = 0 V, VDS = 950 V
1
µA
IDSS
Zero-gate voltage drain current
VGS = 0 V, VDS = 950 V
TC = 125 °C(1)
50
µA
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
4
5
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 9 A
0.275
0.330
Ω
Min.
Typ.
Max.
Unit
-
1550
-
pF
-
140
-
pF
-
1
-
pF
-
65
-
pF
178
-
pF
3
Notes:
(1)Defined
by design, not subject to production test
Table 6: Dynamic
Symbol
Ciss
Parameter
Test conditions
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(er)(1)
Equivalent capacitance energy
related
Co(tr)(2)
Equivalent capacitance time
related
VGS = 0 V, VDS = 0 to
760 V
Rg
Intrinsic gate resistance
f = 1 MHz , ID = 0 A
-
3.5
-
Ω
Qg
Total gate charge
-
48
-
nC
Qgs
Gate-source charge
-
9
-
nC
Qgd
Gate-drain charge
VDD = 760 V,
ID = 17.5 A
VGS= 10 V
(see Figure 16: "Test
circuit for gate charge
behavior")
-
32.5
-
nC
Notes:
(1)C
o(er)
is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to
80% VDSS.
(2)C
o(tr)
is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to
80% VDSS.
4/13
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STWA20N95K5
Electrical characteristics
Table 7: Switching times
Symbol
Parameter
Turn-on delay
time
td(on)
tr
Rise time
Turn-off delay
time
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
VDD= 475 V, ID = 9 A, RG = 4.7 Ω
VGS = 10 V
(see Figure 15: "Test circuit for resistive
load switching times" and Figure 20:
"Switching time waveform")
-
18
-
ns
-
9
-
ns
-
65
-
ns
-
18
-
ns
Min.
Typ.
Max.
Unit
Fall time
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Source-drain
current
-
17.5
A
ISDM(1)
Source-drain
current (pulsed)
-
70
A
VSD(2)
Forward on
voltage
ISD = 17.5 A, VGS = 0 V
-
1.5
V
ISD = 17.5 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 17: "Test circuit for
inductive load switching and diode
recovery times")
-
513
ns
-
12
µC
-
46
A
ISD = 17.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17: "Test circuit for
inductive load switching and diode
recovery times")
-
670
ns
-
15
µC
ISD
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
-
44
A
Test conditions
Min.
Typ.
Max.
Unit
IGS = ± 1 mA, ID = 0 A
30
-
-
V
Notes:
(1)Pulse
width limited by safe operating area
(2)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
V(BR) GSO
Parameter
Gate-source breakdown voltage
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
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Electrical characteristics
2.1
STWA20N95K5
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
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STWA20N95K5
Electrical characteristics
Figure 8: Capacitance variation
Figure 9: Output capacitance stored energy
Figure 10: Normalized gate threshold voltage vs
temperature
Figure 12: Maximum avalanche energy vs starting TJ
Figure 11: Normalized on-resistance vs
temperature
Figure 13: Normalized V(BR)DSS vs temperature
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7/13
Electrical characteristics
STWA20N95K5
Figure 14: Source-drain diode forward characteristics
8/13
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STWA20N95K5
3
Test circuits
Test circuits
Figure 15: Test circuit for resistive load
switching times
Figure 16: Test circuit for gate charge
behavior
VDD
RL
IG= CONST
VGS
+
pulse width
2200
μF
100 Ω
D.U.T.
2.7 kΩ
VG
47 kΩ
1 kΩ
AM01469v10
Figure 17: Test circuit for inductive load
switching and diode recovery times
Figure 18: Unclamped inductive load test
circuit
Figure 19: Unclamped inductive waveform
DocID025573 Rev 2
Figure 20: Switching time waveform
9/13
Package information
4
STWA20N95K5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
TO-247 long leads package information
Figure 21: TO-247 long leads package outline
10/13
DocID025573 Rev 2
STWA20N95K5
Package information
Table 10: TO-247 long leads package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
P
3.50
3.60
Q
5.60
S
6.05
L1
4.30
DocID025573 Rev 2
3.70
6.00
6.15
6.25
11/13
Revision history
5
STWA20N95K5
Revision history
Table 11: Document revision history
Date
Revision
21-Nov-2013
1
First release.
2
Datasheet promoted from preliminary to production data.
Modified: title.
Updated: features, applications and description in cover page.
Minor text changes in Section 1: "Electrical ratings" and Section 2:
"Electrical characteristics".
Updated Section 2.1: "Electrical characteristics (curves)".
Updated Section 4.1: "TO-247 long leads package information".
16-Jan-2017
12/13
Changes
DocID025573 Rev 2
STWA20N95K5
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