STWA57N65M5

STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID 710 V 0.063 Ω 42 A STW57N65M5 STWA57N65M5 • Worldwide best RDS(on)*area amongst the silicon based devices 3 2 1 • Higher VDSS rating, high dv/dt capability TO-247 TO-247 long leads • Excellent switching performance • Easy to drive, 100% avalanche tested Figure 1. Internal schematic diagram Applications • Switching applications ' Description * 6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages STW57N65M5 TO-247 57N65M5 STWA57N65M5 December 2013 This is information on a product in full production. Packaging Tube TO-247 long leads DocID024050 Rev 2 1/16 www.st.com Contents STW57N65M5, STWA57N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 DocID024050 Rev 2 STW57N65M5, STWA57N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate- source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 42 A ID Drain current (continuous) at TC = 100 °C 26.5 A IDM (1) Drain current (pulsed) 168 A PTOT Total dissipation at TC = 25 °C 250 W 11 A IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 960 mJ Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns -55 to 150 °C 150 °C Value Unit 0.50 °C/W 50 °C/W dv/dt (2) dv/dt (3) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 42 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 520 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID024050 Rev 2 3/16 16 Electrical characteristics 2 STW57N65M5, STWA57N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C 1 100 μA μA IGSS Gate-body leakage current (VDS = 0) ±100 nA 4 5 V 0.056 0.063 Ω Min. Typ. Max. Unit - 4200 - pF - 115 pF - 9 pF - 93 - pF - 303 - pF f = 1 MHz, ID=0 - 1.3 - Ω VDD = 520 V, ID = 21 A, VGS = 10 V (see Figure 17 and 20) - 98 - nC - 23 nC - 40 nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on Static drain-source onVGS = 10 V, ID = 21 A resistance 3 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(er)(1) Equivalent output capacitance energy related Co(tr)(2) Equivalent output capacitance time related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 520 V RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/16 DocID024050 Rev 2 STW57N65M5, STWA57N65M5 Electrical characteristics Table 6. Switching times Symbol td(V) Parameter Voltage delay time tr(V) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 28 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17 and 20) Crossing time Min. Typ. Max. Unit - 73 - ns - 15 - ns - 12 - ns - 19 - ns Min. Typ. Table 7. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Test conditions ISD = 42 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 42 A, di/dt = 100 A/μs VDD = 100 V (see Figure 17) ISD = 42 A, di/dt = 100 A/μs VDD = 100 V, Tj = 150 °C (see Figure 17) Max. Unit - 42 168 A A - 1.5 V - 418 ns - 8 μC - 40 A - 528 ns - 12 μC - 44 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID024050 Rev 2 5/16 16 Electrical characteristics 2.1 STW57N65M5, STWA57N65M5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM14705v1 ID (A) 100 s ai re n) s a DS(o i th R in ax n io by m t a er ted Op imi L 10 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 1 Single pulse 0.1 10 1 0.1 VDS(V) 100 Figure 4. Output characteristics Figure 5. Transfer characteristics AM14706v1 ID (A) VGS= 9, 10 V 100 AM14707v1 ID (A) VDS= 25 V 100 VGS= 8 V 80 80 VGS= 7 V 60 60 40 40 VGS= 6 V 20 0 4 0 16 12 8 20 0 VDS(V) Figure 6. Gate charge vs gate-source voltage AM14708v1 VGS (V) VDS (V) 500 VDD=520V 10 ID=21A VDS 8 400 6 300 4 200 2 100 3 4 5 6 7 8 9 VGS(V) Figure 7. Static drain-source on-resistance AM14709v1 RDS(on) (Ω) 0.062 VGS=10V 0.060 0.058 0.056 0 0 6/16 20 40 60 80 0 100 Qg(nC) 0.054 0.052 0.05 DocID024050 Rev 2 0 10 20 30 ID(A) STW57N65M5, STWA57N65M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM14710v1 C (pF) AM14711v1 Eoss (µJ) 18 16 10000 Ciss 14 1000 12 10 100 8 Coss 6 10 4 Crss 2 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM04972v1 VGS(th) (norm) 0 0 VDS(V) 100 400 200 300 500 600 VDS(V) Figure 11. Normalized on-resistance vs temperature AM05501v2 RDS(on) (norm) ID=250µA 2.1 1.10 ID= 21 A 1.9 VGS= 10 V 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04974v1 VSD (V) 0.5 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 13. Normalized VDS vs temperature AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 0.6 TJ=150°C 1.00 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 DocID024050 Rev 2 0 25 50 75 100 TJ(°C) 7/16 16 Electrical characteristics STW57N65M5, STWA57N65M5 Figure 14. Switching losses vs gate resistance (1) AM14712v1 E (μJ) 800 Eon VDD=400V VGS=10V ID=28A 600 Eoff 400 200 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/16 DocID024050 Rev 2 STW57N65M5, STWA57N65M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform V(BR)DSS Figure 20. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 DocID024050 Rev 2 Tfall Tcross --over AM05540v2 9/16 16 Package mechanical data 4 STW57N65M5, STWA57N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID024050 Rev 2 STW57N65M5, STWA57N65M5 Package mechanical data Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024050 Rev 2 5.70 11/16 16 Package mechanical data STW57N65M5, STWA57N65M5 Figure 21. TO-247 drawing 0075325_G 12/16 DocID024050 Rev 2 STW57N65M5, STWA57N65M5 Package mechanical data Table 9. TO-247 long leads mechanical data mm Dim. Min. Typ. Max. A 4.90 5.15 D 1.85 2.10 E 0.55 0.67 F 1.07 1.32 F1 1.90 2.38 F2 2.87 3.38 G 10.90 BSC H 15.77 16.02 L 20.82 21.07 L1 4.16 4.47 L2 5.49 5.74 L3 20.05 20.30 L4 3.68 3.93 L5 6.04 6.29 M 2.25 2.55 V 10° V1 3° V3 20° Dia. 3.55 3.66 DocID024050 Rev 2 13/16 16 Package mechanical data STW57N65M5, STWA57N65M5 Figure 22. TO-247 long leads drawing 7395426_G 14/16 DocID024050 Rev 2 STW57N65M5, STWA57N65M5 5 Revision history Revision history Table 10. Document revision history Date Revision 17-Dec-2012 1 First release. 2 – Modified: Figure 1 – Added: MOSFET dv/dt ruggedness parameter in Table 2 and note 3 – Modified: test conditions Co(er) and Co(tr) in Table 5 – Updated: the entire Section 2.1: Electrical characteristics (curves) except Figure 14: Switching losses vs gate resistance – Updated: Section 4: Package mechanical data – Minor text changes 13-Dec-2013 Changes DocID024050 Rev 2 15/16 16 STW57N65M5, STWA57N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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