STWA70N65DM6

STWA70N65DM6 Datasheet N-channel 650 V, 36 mΩ typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long leads package Features D(2, TAB) G(1) Order code VDS RDS(on) max. ID STWA70N65DM6 650 V 40 mΩ 68 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications • Switching applications S(3) AM01476v1_tab Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STWA70N65DM6 Product summary Order code STWA70N65DM6 Marking 70N65DM6 Package TO-247 long leads Packing Tube DS12313 - Rev 5 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com STWA70N65DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 68 A ID Drain current (continuous) at TC = 100 °C 43 A Drain current (pulsed) 260 A Total power dissipation at TC = 25 °C 450 W dv/dt (2) Peak diode recovery voltage slope 100 V/ns di/dt(2) Peak diode recovery current slope 1000 A/μs dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns TSTG Storage temperature range VGS IDM (1) PTOT TJ Parameter Operating junction temperature range -55 to 150 °C °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 68 A, VDS (peak) < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 520 V. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 0.28 °C/W 50 °C/W Value Unit 8 A 1.8 J Table 3. Avalanche characteristics Symbol DS12313 - Rev 5 Parameter IAR Avalanche current, repetitive or not repetitive (tp limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR; VDD = 50 V) page 2/12 STWA70N65DM6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 650 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 34 A VGS = 0 V, VDS = 650 V, TC = 125 °C Unit V VGS = 0 V, VDS = 650 V IDSS Max. 10 (1) 100 μA ±5 μA 4 4.75 V 36 40 mΩ Min. Typ. Max. Unit - 4900 - - 280 - - 3 - 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic characteristics Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 859 - RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 2.3 - Qg Total gate charge - 125 - Qgs Gate-source charge - 33 - Qgd Gate-drain charge - 56 - VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 520 V, ID = 68 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) pF Ω nC 1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12313 - Rev 5 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 325 V, ID = 34 A, - 30.4 - ns Rise time RG = 4.7 Ω , VGS = 10 V - 52 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 107 - ns - 10.8 - ns Fall time page 3/12 STWA70N65DM6 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 68 A ISDM (1) Source-drain current (pulsed) - 260 A VSD (2) Forward on voltage - 1.6 V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Qrr IRRM VGS = 0 V, ISD = 68 A - 170 - ns (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 1.08 - µC - 12.7 - A Reverse recovery time ISD = 68 A, di/dt = 100 A/μs, - 308 - ns Reverse recovery charge VDD = 60 V, TJ = 150 °C - 4.16 - µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 27 - A ISD = 68 A, di/dt = 100 A/μs, VDD = 60 V 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS12313 - Rev 5 page 4/12 STWA70N65DM6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) Zthj-c (°C/W) GADG280620190757SOA Operation in this area is limited by RDS(on) IDM 0.2 tp = 1 µs 102 tp = 10 µs GADG280620190822ZTH 0.3 duty = 0.5 0.4 10-1 V(BR)DSS 101 0.1 RDS(on) max. tp = 100 µs 10-2 0.05 100 TC = 25 °C, TJ ≤ 150 °C single pulse 10-1 10-1 100 101 single pulse tp = 1 ms VDS (V) 102 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics ID (A) ID (A) GADG060620191330OCH VGS = 9, 10 V 240 200 240 200 VGS = 8 V 160 120 VGS = 7 V 80 80 VGS = 6 V 40 0 0 2 4 6 8 10 12 40 VDS (V) Figure 5. Typical gate charge characteristics VDS (V) GADG060620191331QVGVGS VDD = 520 V, ID = 68 A 600 (V) 0 4 10 38 8 37 300 6 36 200 4 35 100 2 34 500 DS12313 - Rev 5 Qgs Qgd 30 60 90 120 150 0 Qg (nC) 6 7 RDS(on) (mΩ) 39 Qg 5 8 9 VGS (V) Figure 6. Typical drain-source on-resistance 12 0 0 VDS = 12 V 160 120 400 GADG060620191331TCH 33 0 GADG060620191329RID VGS =10 V 10 20 30 40 50 60 ID (A) page 5/12 STWA70N65DM6 Electrical characteristics (curves) Figure 7. Typical capacitance characteristics C (pF) Figure 8. Typical output capacitance stored energy EOSS (µJ) GADG060620191330CVR GADG060620191332EOS 50 10 4 CISS 40 10 3 30 10 2 COSS f = 1 MHz 20 CRSS 10 1 10 0 10 -1 10 10 0 10 1 10 2 VDS (V) Figure 9. Normalized gate threshold vs temperature VGS(th) (norm.) GADG050620191111VTH 1.1 0 0 200 300 400 500 600 VDS (V) Figure 10. Normalized on-resistance vs. temperature RDS(on) (norm.) GADG050620191125RON 2.5 ID = 250 µA 1.0 2.0 0.9 1.5 0.8 1.0 0.7 0.5 0.6 -75 100 -25 25 75 125 TJ (°C) Figure 11. Normalized breakdown voltage vs temperature V(BR)DSS (norm.) GADG060620191329VTH 0.0 -75 VGS = 10 V -25 25 TJ (°C) VSD (V) GADG060620191330SDF TJ = -50 °C 1.0 ID = 1 mA 1.05 125 Figure 12. Typical reverse diode forward characteristics 1.1 1.10 75 0.9 TJ = 25 °C 1.00 0.8 0.95 0.90 0.85 -75 DS12313 - Rev 5 TJ = 150 °C 0.7 0.6 -25 25 75 125 TJ (°C) 0.5 0 10 20 30 40 50 60 ISD (A) page 6/12 STWA70N65DM6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD VD IG= CONST VGS + pulse width RG VGS D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12313 - Rev 5 page 7/12 STWA70N65DM6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 long leads package information Figure 19. TO-247 long leads package outline 8463846_2_F DS12313 - Rev 5 page 8/12 STWA70N65DM6 TO-247 long leads package information Table 8. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS12313 - Rev 5 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 9/12 STWA70N65DM6 Revision history Table 9. Document revision history Date Version 06-Dec-2017 1 Changes Initial release. Update Table 1, Table 3, Table 4, Table 5, Table 6 and Table 7. 09-Jul-2019 2 Added Section 2.1 Update Figure 14. DS12313 - Rev 5 21-Feb-2020 3 The part number STW70N65DM6 have been moved to a separate datasheet and the document has been updated accordingly. 16-Mar-2020 4 Updated Table 7. Source-drain diode. 02-Jul-2020 5 Updated Table 1. Absolute maximum ratings. page 10/12 STWA70N65DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS12313 - Rev 5 page 11/12 STWA70N65DM6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12313 - Rev 5 page 12/12