STWA72N60DM2AG

STWA72N60DM2AG Datasheet Automotive-grade N-channel 600 V, 37 mΩ typ., 66 A, MDmesh™ DM2 Power MOSFET in a TO-247 long leads package Features • • • • • • • D(2) Order code VDS RDS(on) max. ID PTOT STWA72N60DM2AG 600 V 42 mΩ 66 A 446 W AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications • Switching applications S(3) AM01476v1_No_tab Product status link Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. STWA72N60DM2AG Product summary Order code STWA72N60DM2AG Marking 72N60DM2 Package TO-247 long leads Packing Tube DS12726 - Rev 1 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STWA72N60DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 66 Drain current (continuous) at Tcase = 100 °C 42 IDM(1) Drain current (pulsed) 220 A PTOT Total dissipation at Tcase = 25 °C 446 W dv/dt(2) Peak diode recovery voltage slope 50 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range VGS ID Tj Parameter Operating junction temperature range A V/ns -55 to 150 °C Value Unit 1. Pulse width is limited by safe operating area. 2. ISD ≤ 66 A, di/dt=800 A/μs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient 0.28 50 °C/W Table 3. Avalanche characteristics Symbol DS12726 - Rev 1 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 8 A 1500 mJ page 2/13 STWA72N60DM2AG Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current IGSS 10 VGS = 0 V, VDS = 600 V, TC = 125 100 °C(1) Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 33 A Unit V VGS = 0 V, VDS = 600 V IDSS Max. µA ±5 µA 4 5 V 37 42 mΩ Min. Typ. Max. Unit - 5508 - - 241 - - 2.8 - 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 470 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 2 - Ω Qg Total gate charge VDD = 480 V, ID = 66 A, - 121 - Qgs Gate-source charge VGS = 0 to 10 V - 26 - Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 61 - Qgd VDS = 100 V, f = 1 MHz, VGS = 0 V pF nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12726 - Rev 1 Parameter Test conditions Min. Typ. Max. Turn-on delay time VDD = 300 V, ID = 33 A, - 32 - Rise time RG = 4.7 Ω, VGS = 10 V - 67 - Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 112 - - 10.4 - Fall time Unit ns page 3/13 STWA72N60DM2AG Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM(1) (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 66 A Source-drain current (pulsed) - 220 A 1.6 V Forward on voltage VGS = 0 V, ISD = 66 A - trr Reverse recovery time ISD = 66 A, di/dt = 100 A/µs, - 150 ns Qrr Reverse recovery charge VDD = 480 V - 0.75 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 10.5 A trr Reverse recovery time ISD = 66 A, di/dt = 100 A/µs, - 250 ns Qrr Reverse recovery charge VDD = 480 V, Tj = 150 °C - 2.5 µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 20.7 A VSD IRRM 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS12726 - Rev 1 page 4/13 STWA72N60DM2AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) GADG060820181135SOA AM09125v1 K d=0.5 tp =1 µs 102 Operation in this area is limited by RDS(on) 0.2 tp =10 µs 101 0.1 0.05 tp =100 µs 10 -1 0.02 100 0.01 Single pulse, TC = 25 °C, TJ ≤ 150 °C 10-1 tp =10 ms 10-2 10-1 100 101 VDS (V) 102 Figure 3. Output characteristics ID (A) 160 t 10 -3 10 ID (A) V GS = 8 V -2 10 -1 t p (s) GIPG100415FQ69WTCH VDS = 15 V 160 V GS = 7 V 120 120 80 80 V GS = 6 V 40 40 V GS = 5 V 0 0 4 8 12 16 V DS (V) Figure 5. Gate charge vs gate-source voltage GIPG130415FQ69WQVG VDS VGS (V) 12 10 tp -2 10 -4 10 Figure 4. Transfer characteristics GIPG100415FQ69WOCH V GS = 9, 10 V Zth =k *Rthj-c d=t p /t Single pulse tp =1 ms VDS VDD = 480 V ID = 66 A 0 3 R DS(on) (mΩ) 600 45 8 400 6 300 4 200 2 100 5 6 7 8 VGS (V) Figure 6. Static drain-source on-resistance (V) 500 4 GIPG100415FQ69WRID 41 V GS = 10 V 37 0 0 DS12726 - Rev 1 20 40 60 80 100 120 0 Qg (nC) 33 29 25 0 10 20 30 40 50 60 I D (A) page 5/13 STWA72N60DM2AG Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations C (pF) GIPG100415FQ69WCVR 10 4 V GS(th) (norm.) GIPG100415FQ69WVGS 1.10 C ISS I D = 250 μA 1.00 10 3 C OSS 0.90 10 2 10 0.80 C RSS f = 1 MHz 1 0.70 10 0 10 -1 10 0 10 1 V DS (V) 10 2 Figure 9. Normalized on-resistance vs temperature R DS(on) (norm.) GIPG100415FQ69WRON 0.60 -75 25 V GS = 10 V I D = 33 A 1.8 V (BR)DSS (norm.) 1.00 1.0 0.96 0.6 0.92 25 75 125 T j (°C) Figure 11. Output capacitance stored energy E OSS (μJ) 125 T j (°C) GIPG100415FQ69WBDV I D = 1 mA 1.04 1.4 -25 75 Figure 10. Normalized V(BR)DSS vs temperature 1.08 2.2 0.2 -75 -25 GIPG100415FQ69WEOS 0.88 -75 -25 V SD (V) 125 T j (°C) GIPG180520151147SDF T j = -50 °C 0.9 24 75 Figure 12. Source- drain diode forward characteristics 1 32 25 T j = 25 °C 0.8 16 T j = 150 °C 0.7 8 0 0 DS12726 - Rev 1 0.6 100 200 300 400 500 600 V DS (V) 0.5 0 10 20 30 40 50 60 I SD (A) page 6/13 STWA72N60DM2AG Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12726 - Rev 1 page 7/13 STWA72N60DM2AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS12726 - Rev 1 page 8/13 STWA72N60DM2AG TO-247 long leads package information 4.1 TO-247 long leads package information Figure 19. TO-247 long leads package outline 8463846_2_F DS12726 - Rev 1 page 9/13 STWA72N60DM2AG TO-247 long leads package information Table 8. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS12726 - Rev 1 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 10/13 STWA72N60DM2AG Revision history Table 9. Document revision history DS12726 - Rev 1 Date Version 07-Aug-2018 1 Changes Initial release. The document status is production data. page 11/13 STWA72N60DM2AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 [Package name] package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS12726 - Rev 1 page 12/13 STWA72N60DM2AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12726 - Rev 1 page 13/13