STX112-AP

® STX112 SILICON NPN POWER DARLINGTON TRANSISTOR s s MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-92 plastic package. It is intented for use in linear and switching applications. Ordering codes: STX112 STX112-AP TO-92 (shipment in bulk) (shipment in ammopack) INTERNAL SCHEMATIC DIAGRAM R 1 T yp.= 7K Ω R 2 T yp.= 230 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T amb = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 100 100 5 2 4 50 1.2 -65 to 150 150 Unit V V V A A mA W o o C C October 2000 1/5 STX112 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max 104 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO I CBO I EBO Parameter Collector Cut-off Current (I B = 0 ) Collector Cut-off Current (I E = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 5 0 V V CB = 1 00 V V EB = 5 V I C = 3 0 mA 100 Min. Typ. Max. 2 1 2 Unit mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain IC = 2 A IC = 2 A IC = 1 A IC = 2 A IB = 8 mA V CE = 4 V V CE = 4 V V CE = 4 V 1000 500 2.5 2 .8 V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curve 2/5 STX112 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Freewheel Diode Forward Voltage 3/5 STX112 TO-92 MECHANICAL DATA mm DIM. MIN. TYP. MAX. MIN. inch TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 0.500 E 1.27 0.050 F 0.4 0.51 0.016 0.020 G 0.35 0.14 4/5 STX112 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5