STX117-AP

STX112 STX117 Complementary power Darlington transistors Features . ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ TO-92 AP Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Figure 1. Internal schematic diagram R1 typ. = 15 kΩ Table 1. R2 typ. = 100 Ω Device summary Order codes Marking Polarity Package Packaging STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack April 2010 Doc ID 6881 Rev 4 1/9 www.st.com 9 Absolute maximum ratings 1 STX112, STX117 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Unit 100 V Collector-base voltage (IE = 0) VCEO Collector-emitter voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) 5 V Collector current 2 A Collector peak current 4 A Base current 0.05 A PTOT Total dissipation at Tamb = 25 °C 1.2 W TSTG Storage temperature -65 to 150 °C 150 °C ICM IB TJ Max. operating junction temperature For PNP types voltage and current values are negative. Table 3. Symbol RthJA 2/9 Value VCBO IC Note: Parameter Thermal data Parameter Thermal resistance junction-ambient max. Doc ID 6881 Rev 4 Value Unit 104 °C/W STX112, STX117 2 Electrical characteristics Electrical characteristics Tcase = 25 °C; unless otherwise specified. Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 100 V - 1 mA ICEO Collector cut-off current (IB = 0) VCE = 50 V - 2 mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 2 mA Collector-emitter sustaining voltage (IB = 0) IC = 30 mA VCEO(sus)(1) 100 - V Collector-emitter saturation IC = 2 A voltage IB = 8 mA - 2.5 V VBE(on) Base-emitter on voltage IC = 2 A VCE = 4 V - 2.8 V hFE(1) IC = 1 A_ _ VCE = 4 V 1000 - DC current gain IC = 2 A_ VCE = 4 V 500 - VCE(sat)(1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Note: For PNP types voltage and current values are negative. 2.1 Typical characteristic (curves) Figure 2. DC current gain (VCE = 3 V NPN) Figure 3. Doc ID 6881 Rev 4 DC current gain (VCE = - 3 V PNP) 3/9 Electrical characteristics 4/9 STX112, STX117 Figure 4. DC current gain (VCE = 5 V NPN) Figure 5. DC current gain (VCE = - 5 V PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) Figure 8. Base-emitter saturation voltage (NPN) Figure 9. Base-emitter saturation voltage (PNP) Doc ID 6881 Rev 4 STX112, STX117 Electrical characteristics Figure 10. Base-emitter on voltage (NPN) Figure 11. Base-emitter on voltage (PNP) Figure 12. Resistive load switching time Figure 13. Resistive load switching time (NPN, on) (PNP, on) Figure 14. Resistive load switching time Figure 15. Resistive load switching time (NPN, off) (PNP, off) Doc ID 6881 Rev 4 5/9 Package mechanical data 3 STX112, STX117 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 6/9 Doc ID 6881 Rev 4 STX112, STX117 Package mechanical data TO-92 ammopack shipment (suffix”-AP”) mechanical data Dim. A1 T T1 T2 d P0 P2 F1,F2 F3 delta H W W0 W1 W2 H H3 H0 H1 D0 t L I1 delta P mm. Typ. Min. 12.50 5.65 2.44 4.98 -2.00 17.50 5.70 8.50 12.70 6.35 2.54 5.08 18.00 6.00 9.00 18.50 0.5 15.50 1 16.00 3.80 4.00 3.00 -1.00 Max. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 5.48 2.00 19.00 6.30 9.25 0.50 20.50 1.5 16.50 25.00 4.20 0.90 11.00 1.00 0050910S Doc ID 6881 Rev 4 7/9 Revision history 4 STX112, STX117 Revision history Table 5. 8/9 Document revision history Date Revision 21-Jan-2008 3 07-Apr-2010 4 Changes Updated package mechanical data. Doc ID 6881 Rev 4 STX112, STX117 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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