STX13005-AP

STX13005 STX13005-AP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code STX13005 STX13005-AP s s s Marking X13005 X13005 Shipment Bulk Ammopack s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED COMPACT FLUORESCENT LAMPS (CFLS) SWITCH MODE POWER SUPPLIES (AC / DC CONVERTERS) TO-92 APPLICATIONS: s s DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB < 1.5 A, tp < 10 ms) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 V(BR)EBO 3 6 1.5 3 2.8 –65 to 150 150 Unit V V V A A A A W °C °C November 2002 1/8 STX13005 / STX13005-AP THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 44.6 150 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol ICES ICEO V(BR)EBO Parameter Collector Cut-off Current (VBE = 0) Collector Cut-off Current (IB = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Sustaining Voltage (IB = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time VCE = 700 V VCE = 700 V VCE = 400 V IE = 10 mA 9 Test Conditions Tj = 100 °C Min. Typ. Max. 1 5 1 18 Unit mA mA mA V VCEO(sus)* IC = 10 mA 400 V VCE(sat)* IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A IC = 1 A IC = 2 A IC = 2 A IB1 = -IB2 = 400 mA (See Figure 1) IC = 1 A IB1 = 200 mA L = 50 mH (See Figure 2) IB = 200 mA IB = 500 mA IB = 750 mA IB = 200 mA IB = 500 mA VCE = 5 V VCE = 5 V VCC = 125 V tp = 30 µs Vclamp = 300 V VBE(off) = -5 V RBB = 0 10 8 1.65 260 0.8 150 0.5 0.6 5 1.2 1.6 30 24 V V V V V VBE(sat)* hFE* ts tf ts tf µs ns µs ns * Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %. 2/8 STX13005 / STX13005-AP Safe Operating Area Derating Curve Output Characteristics DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage 3/8 STX13005 / STX13005-AP Base-Emitter Saturation Voltage Resistive Load Storage Time Resistive Load Fall Time Inductive Load Storage Time Inductive Load Fall Time Reverse Biased Safe Operating Area 4/8 STX13005 / STX13005-AP Figure 1: Resistive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor Figure 2: Inductive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor 3) Fast Recovery Rectifier 5/8 STX13005 / STX13005-AP TO-92 BULK SHIPMENT MECHANICAL DATA mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5° TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.036 0.016 inch TYP. MAX. 0.195 0.020 0.195 0.155 0.105 0.055 0.610 0.095 0.060 0.022 5° 6/8 STX13005 / STX13005-AP TO-92 AMMOPACK SHIPMENT (Suffix “-AP”) MECHANICAL DATA mm. MIN. TYP. MAX. 4.80 3.80 1.60 2.30 0.48 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80 16.00 4.00 18.00 6.00 9.00 12.70 6.35 2.54 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 3.00 -1.00 1.00 0.118 -0.039 0.039 0.150 0.157 0.728 0.610 0.630 0.492 0.222 0.096 -0.079 0.689 0.224 0.335 0.709 0.236 0.354 0.500 0.250 0.100 MIN. inch TYP. MAX. 0.189 0.150 0.063 0.091 0.019 0.508 0.278 0.116 0.079 0.748 0.248 0.364 0.020 0.807 0.650 0.984 0.165 0.035 0.433 DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P 7/8 STX13005 / STX13005-AP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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