STX25NM60ND

STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 TO-220FP D2PAK 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 12 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. I2PAK TO-247 Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Marking 25NM60ND 25NM60ND 25NM60ND 25NM60ND 25NM60ND Rev 4 Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube 1/18 www.st.com 18 Order codes STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND March 2009 Contents STx25NM60ND Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STx25NM60ND Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220, D2PAK I2PAK, TO-247 600 ±25 21 13 84 160 40 2500 –55 to 150 150 21 (1) Unit TO-220FP V V A A A W V/ns V °C °C VDS VGS ID ID IDM (2) Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Max. operating junction temperature 13(1) 84(1) 40 PTOT dv/dt(3) Viso Tstg TJ 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 21 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 300 62.5 TO-220 I²PAK 0.78 50 30 TO-247 D²PAK TO-220FP 3.1 62.5 Unit °C/W °C/W °C/W Tl °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) Max value 10 850 Unit A mJ 3/18 Electrical characteristics STx25NM60ND 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol On/off states Value Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. V 48 1 100 100 3 4 0.13 5 0.16 V/ns µA µA nA V Ω Unit V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on) ID = 1 mA, VGS = 0 VDD= 480 V, ID= 21 A, VGS= 10 V VDS = Max rating VDS = Max rating @125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 10.5 A 600 1. Characteristic value at turn off on inductive load Table 6. Symbol gfs (1) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS = 15 V, ID = 10.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 17 2400 150 15 320 60 30 50 40 80 15 40 1.6 Max. Unit S pF pF pF Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd Rg VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 10.5 A RG = 4.7 Ω VGS = 10 V (see Figure 23), (see Figure 18) VDD = 480 V, ID = 21 A, VGS = 10 V, (see Figure 19) f=1 MHz Gate DC Bias=0 Test signal level = 20 mV Open drain pF ns ns ns ns nC nC nC Ω 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STx25NM60ND Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, VGS = 0 ISD = 21 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) ISD = 21 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) 160 1 15 230 2 19 Test conditions Min. Typ. Max. 21 84 1.3 Unit A A V ns µC A ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 5/18 Electrical characteristics STx25NM60ND 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220, D²PAK, I²PAK Figure 3. Thermal impedance for TO-220, D²PAK, I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/18 STx25NM60ND Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/18 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STx25NM60ND Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STx25NM60ND Test circuits 3 Test circuits Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data STx25NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/18 STx25NM60ND Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/18 Package mechanical data STx25NM60ND TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J 12/18 STx25NM60ND Package mechanical data TO-262 (I2PAK) mechanical data mm. DIM. Min. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ. Max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ. Max. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 13/18 Package mechanical data STx25NM60ND D²PAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 0° 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 14/18 STx25NM60ND Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 15/18 Packing mechanical data STx25NM60ND 5 Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 16/18 STx25NM60ND Revision history 6 Revision history Table 8. Date 15-Nov-2007 22-Jan-2008 Document revision history Revision 1 2 First release. Document status promoted from target specification to preliminary data. – Updated Table 3: Thermal data on page 3; – Document status promoted from preliminary data to datasheet. Qg value has been updated. Changes 08-Apr-2008 03-Mar-2009 3 4 17/18 STx25NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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