STX616-AP

STX616 High voltage NPN power transistor Features ■ ■ ■ High voltage capability High DC current gain Minimum lot-to-lot spread for reliable operation Applications ■ ■ Switching mode power supply Battery charger TO-92 TO-92AP Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. The device is designed for use in SMPS and battery charger. Figure 1. Internal schematic diagram Table 1. Device summary Marking X616 X616 Package TO-92 TO-92AP Packaging Bulk Ammopack Order code STX616 STX616-AP October 2007 Rev 2 1/8 www.st.com 8 Electrical characteristics STX616 STX616-AP 1 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 980 500 12 1.5 2.4 0.8 1.2 2.8 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol Rthj-case Rthj-amb Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient __max __max Value 44.6 150 Unit °C/W °C/W 2/8 STX616 STX616-AP Electrical characteristics 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol ICES Electrical characteristics Parameter Collector cut-off current (VBE =0) Collector-emitter sustaining voltage (IB = 0) Emitter-base voltage (IC = 0) Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions VCE = 980V VCE = 980V IC = 10mA Tc = 125°C 500 Min. Typ. Max. 50 0.5 Unit µA mA VCE(sus) (1) V VEBO VCE(sat) (1) IE = 1mA IC = 0.2A IC = 1A IC = 0.2A IC = 1A IC = 500µA IB = 40mA IB = 200mA IB = 40mA IB = 200mA VCE = 2V V CE = 5V V CE = 5V VCE = 5V 12 0.5 1 1 1.4 17 25 12 4 V V V V V VBE(sat) (1) hFE (1) DC current gain IC = 200mA IC = 500mA IC = 1.5A ton ts tf ton ts tf ts tf ts tf RESISTIVE LOAD Turn-on time Storage time Fall time RESISTIVE LOAD Turn-on time Storage time Fall time INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time VCC = 250V IB1 = 65mA IC = 250mA IB2 = -130mA 0.2 5 0.65 µs µs µs µs µs µs µs µs µs µs VCC = 250V IC = 0.8A 1 2.5 0.35 IB1 = 160mA IB2 = -0.4A Vcl = 300V IB1 = 65mA L = 200µH Vcl = 300V IB1 = 160mA L = 200µH IC = 250mA IB2 = -130mA IC = 0.8A IB2 = -0.4A 2.5 0.25 5 0.5 Note (1) Pulsed duration = 300 µs, duty cycle ≤ 1.5% 3/8 Package mechanical data STX616 STX616-AP 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 4/8 STX616 STX616-AP Package mechanical data TO-92 BULK SHIPMENT MECHANICAL DATA DIM. mm. MIN. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5O TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 A b D E e e1 L R S1 W V 0102782 C 5/8 Package mechanical data STX616 STX616-AP TO-92 AMMOPACK SHIPMENT (Suffix”-AP”) MECHANICAL DATA mm. TYP DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P MIN. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80 12.70 6.35 2.54 18.00 6.00 9.00 16.00 4.00 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 3.00 -1.00 6/8 STX616 STX616-AP Revision history 4 Revision history Table 5. Date 06-Jun-2007 22-Oct-2007 Document revision history Revision 1 2 Initial release. Added TO-92AP package. Changes 7/8 STX616 STX616-AP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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