STX826

STX826 Low voltage PNP transistor Features ■ TO-92 package suitable for through-hole PCB assembly ) s ( ct Application ■ Voltage regulation ■ Relay driver ■ Generic switch u d o r P e t e l o Description The STX826 is a low voltage PNP transistor manufactured in planar technology with base island layout. )- s b O Figure 1. Internal schematic diagram (C) (2) s ( t c u d o e t e ol Pr TO-92 (3) (B) (E) bs (1) O Table 1. Device summary Order code Marking Package Packaging STX826 X826 TO-92 Bag April 2011 Doc ID 11747 Rev 3 1/9 www.st.com 9 Electrical ratings 1 STX826 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCBO Collector-base voltage (IE = 0) -60 V VCEO Collector-emitter voltage (IB = 0) -30 V VEBO Emitter-base voltage (IC = 0) -5 V Collector current -3 A Collector peak current (tP < 5 ms) -6 A Base current -1 IBM Base peak current (tP < 5 ms) -2 Ptot Total dissipation at Ta = 25 °C Tstg Storage temperature IC ICM IB TJ Table 3. 0.9 e t e ol Thermal data bs Parameter ) s ( ct u d o Max. operating junction temperature Symbol Pr A A W -65 to 150 °C 150 °C Value Unit Rthj-case Thermal resistance junction-case max 44.6 °C/W Rthj-amb Thermal resistance junction-ambient max 139 °C/W O ) s ( t c u d o r P e t e l o s b O 2/9 Value Doc ID 11747 Rev 3 STX826 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = -60 V -10 µA ICEO Collector cut-off current (IB = 0) VCE= -30 V -100 µA IEBO Emitter cut-off current (IC = 0) VEB= -5 V V(BR)CBO Collector-base breakdown IC = -100 µA voltage (IE = 0) V(BR)CEO(1) Collector-emitter I = -10 mA breakdown voltage (IB = 0) C Emitter-base breakdown voltage (IC = 0) IE = -100 µA VCE(sat)(1) Collector-emitter saturation voltage IC = -1 A IC = -2 A IC = -3 A VBE(sat)(1) Base-emitter saturation voltage O ) u d o hFE r P e fT bs DC current gain Transition frequency IC = -2 A µA V r P e -30 V -5 V IB = -50 mA IB = -100 mA IB = -150 mA -0.4 -0.7 -1.1 V V V IB = -100 mA -1.2 V IC = -100 mA VCE = -2 V IC = -1 A VCE = -2 V VCE = -2 V IC = -3 A VCE = -10 V u d o -60 t e l o V(BR)EBO s ( t c ) s ( ct -10 IC = -0.1 A 100 300 80 30 100 MHz t e l o 1. Pulse duration = 300 µs, duty cycle ≤ 1.5 % s b O Doc ID 11747 Rev 3 3/9 Electrical characteristics 2.1 STX826 Electrical characteristics (curves) Figure 2. DC current gain (VCE=2 V) Figure 3. DC Current Gain (VCE=5 V) ) s ( ct Figure 4. Collector-emitter saturation voltage ) (s u d o r P e Figure 5. t e l o Base-emitter saturation voltage s b O t c u d o r let P e Figure 6. o s b Resistive load switching time Figure 7. (OFF) O 4/9 Doc ID 11747 Rev 3 Resistive load switching time (ON) STX826 Electrical characteristics Figure 8. Reverse biased safe operating area ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 11747 Rev 3 5/9 Electrical characteristics Table 5. STX826 TO-92 mechanical data mm Dim. Min. Typ. Max. A 4.32 4.95 b 0.36 0.51 D 4.45 4.95 E 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 L 12.70 15.49 R 2.16 S1 0.92 W 0.41 ) s ( ct du 2.41 e t e ol V Figure 9. 5° TO-92 drawings ) (s o r P 1.52 0.56 s b O t c u d o r P e t e l o s b O 0102782_Rev_D 6/9 Doc ID 11747 Rev 3 STX826 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 11747 Rev 3 7/9 Revision history 4 STX826 Revision history Table 6. Document revision history Date Revision Changes 18-Oct-2005 2 Curves inserted 27-Apr-2011 3 Changed: Figure 1 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 8/9 Doc ID 11747 Rev 3 STX826 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. 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