STX93003-AP

STX93003 ® HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR ■ ■ ■ ■ ■ ST93003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STX83003, its complementary NPN transistor. TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CES V CEO Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) (I C = 0, I B = -0.5 A, t p < 10µs, T j < 150 o C) Collector Current Value Unit -500 -400 V V V (BR)EBO V -1 A I CM IB Collector Peak Current (t p < 5 ms) Base Current -3 -0.5 A A I BM Base Peak Current (t p < 5 ms) -1.5 A IC P tot T stg Tj o Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature October 2002 1.5 -65 to 150 150 W C o o C 1/7 STX93003 THERMAL DATA R thj-case R t hj-Amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 83.3 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V (BR)EBO Parameter Test Conditions Min. Collector Cut-off Current (V BE = 0) V CE = -500V V CE = -500V Emitter Base Breakdown Voltage (I C = 0) I E = -10 mA -5 I C = -10 mA L = 25 mH -400 V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Typ. T j = 125 o C Max. Unit -1 -5 mA mA -10 V V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -0.5 A I C = -0.35 A I B = -0.1 A I B = -50 mA -0.5 -0.5 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -0.5 A I B = -0.1 A -1 V DC Current Gain I C = -10 mA I C = -0.35 A I C = -1 A V CE = -5 V V CE = -5 V V CE = -5 V 10 16 4 25 32 1.5 90 2.2 0.1 2.9 h FE ∗ tr ts tf RESISTIVE LOAD Rise Time Storage Time Fall Time I C = -0.35 A I B1 = -70 mA T p ≥ 25 µs V CC = 125 V I B2 = 70 mA (see Figure 2) ts tf INDUCTIVE LOAD Storage Time Fall Time I C = -0.5 A V BE(off) = 5 V V clamp = 300 V I B1 = -0.1 A L = 10 mH (see Figure 1) E sb Avalanche Energy L = 4 mH I BR ≤ 2.5 A ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %. 2/7 C = 1.8 nF 25 o C < T C < 125 o C 400 40 12 ns µs µs ns ns mJ STX93003 Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 STX93003 Resistive Load Fall Time Resistive Load Storage Time Inductive Load Fall Time Inductive Load Storage Time Reverse Biased SOA 4/7 STX93003 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 STX93003 TO-92 MECHANICAL DATA mm DIM. MIN. 6/7 TYP. inch MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 L 12.70 15.49 0.500 0.609 R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022 V 4 degree 6 degree 4 degree 6 degree STX93003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7