STY100NM60N

STY100NM60N N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package Datasheet — production data Features Type VDSS @ TJmax RDS(on) max ID STY100NM60N 650 V < 0.029 Ω 98 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ 1 Low gate input resistance 2 3 Max247 Applications ■ Switching applications Figure 1. Internal schematic diagram Description $ This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STY100NM60N 100NM60N Max247 Tube November 2012 This is information on a product in full production. Doc ID 022225 Rev 2 1/13 www.st.com 13 Contents STY100NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 022225 Rev 2 STY100NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage 25 V ID Drain current (continuous) at TC = 25 °C 98 A ID Drain current (continuous) at TC = 100 °C 62 A IDM (1) Drain current (pulsed) 392 A PTOT Total dissipation at TC = 25 °C 625 W Peak diode recovery voltage slope 15 V/ns VGS dv/dt(2) Tstg Tj Parameter Storage temperature °C - 55 to 150 Max. operating junction temperature °C 1. Pulse width limited by safe operating area. 2. ISD ≤98 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V (BR)DSS. Table 3. Symbol Thermal data Value Unit Rthj-case Thermal resistance junction-case max 0.2 °C/W Rthj-amb Thermal resistance junction-ambient max 30 °C/W 300 °C Value Unit Tj Table 4. Symbol Parameter Maximum lead temperature for soldering purpose Avalanche characteristics Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 15 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=Iar, VDD=50) 757 mJ Doc ID 022225 Rev 2 3/13 Electrical characteristics 2 STY100NM60N Electrical characteristics (TC = 25 °C unless otherwise specified). Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. Unit 600 V IDSS Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 °C 10 150 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 3 4 V 0.028 0.029 Ω Min. Typ. Max. Unit - pF pF pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 49 A resistance Table 6. Symbol 2 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 9600 850 50 Equivalent output capacitance VDS = 0 to 480 V VGS = 0 - 1602 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.3 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 98 A, VGS = 10 V (see Figure 15) - 330 40 174 - nC nC nC Ciss Coss Crss Coss(eq)(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Table 7. Symbol td(on) tr td(off) tf 4/13 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 49 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) and (see Figure 19) Doc ID 022225 Rev 2 Min. Typ. - 45 52 372 81 Max. Unit - ns ns ns ns STY100NM60N Electrical characteristics Table 8. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Test conditions Min. Typ. Max. Unit - 98 392 A A ISD = 98 A, VGS = 0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 98 A, di/dt = 100 A/µs VDD = 60 V (see Figure 16) - 622 16.5 52.5 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 98 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 16) - 820 27 66 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022225 Rev 2 5/13 Electrical characteristics STY100NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM09125v1 AM15386v1 ID (A) K 10 0.2 10µs D S( on 100 ) O Li per m at ite io d ni by n m this ax a R rea is δ=0.5 0.1 100µs 0.05 -1 1ms 10 0.02 0.01 10ms Tj=150°C Tc=25°C 1 Single pulse Sinlge pulse 0.1 0.1 Figure 4. -2 10 1 10 -4 10 VDS(V) 100 Output characteristics Figure 5. AM15391v1 ID (A) VGS=10V 7V 240 200 -1 10 10 tp (s) Transfer characteristics AM15384v1 ID (A) 240 VDS=10 V 200 6V 160 160 120 120 80 -2 -3 10 80 5V 40 40 0 0 Figure 6. 8 4 12 16 4V 18 VDS(V) 0 0 Gate charge vs gate-source voltage Figure 7. AM15389v1 VDS VGS (V) VDD=480V ID=98A 12 (V) 500 VDS 10 RDS(on) (Ω) 0.0295 2 4 6 8 VGS(V) Static drain-source on-resistance AM15394v1 VGS= 10 V 0.0290 400 0.0285 8 300 0.0280 6 200 4 0.0270 100 2 0 0 6/13 0.0275 50 100 150 200 250 300 0 Qg(nC) 0.0265 0.0260 0 Doc ID 022225 Rev 2 20 40 60 80 100 ID(A) STY100NM60N Figure 8. Electrical characteristics Capacitance variations Figure 9. AM15385v1 C (pF) Normalized on-resistance vs temperature AM15387v1 RDS(on) (norm) 2.1 ID= 49 A 10000 Ciss 1.9 1.7 1.5 1000 1.3 Coss 100 0.9 Crss 10 1.1 0.1 100 10 1 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM15393v1 VGS(th) (norm) 0.7 0.5 -50 -25 25 50 100 TJ(°C) AM09028v1 VDS ID=1mA 1.10 ID =250 µA 75 Figure 11. Normalized BVDSS vs temperature (norm) 1.08 1.05 1.06 1.00 1.04 0.95 1.02 0.90 1.00 0.85 0.98 0.80 0.96 0.75 0.94 0.92 -50 -25 0.70 -50 -25 0 0 25 50 75 100 125 TJ(°C) Figure 12. Source-drain diode forward characteristics 25 50 75 100 TJ(°C) Figure 13. Output capacitance stored energy AM15391v1 VSD (V) 1.4 0 AM15390v1 Eoss (µJ) 60 TJ=-50°C 1.2 50 1 40 TJ=25°C 0.8 30 TJ=150°C 0.6 20 0.4 10 0.2 0 0 20 40 60 80 ISD(A) Doc ID 022225 Rev 2 0 0 100 200 300 400 500 600 VDS(V) 7/13 Test circuits 3 STY100NM60N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform AM01471v1 Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 022225 Rev 2 10% AM01473v1 STY100NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 022225 Rev 2 9/13 Package mechanical data Table 9. STY100NM60N Max247 mechanical data mm Dim. Min. 10/13 Typ. Max. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 Doc ID 022225 Rev 2 STY100NM60N Package mechanical data Figure 20. Max247 drawing 0094330_Rev_D Doc ID 022225 Rev 2 11/13 Revision history 5 STY100NM60N Revision history Table 10. 12/13 Document revision history Date Revision Changes 14-Sep-2011 1 First release. 05-Nov-2012 2 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves). Minor text changes. Doc ID 022225 Rev 2 STY100NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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