STY105NM50N

STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh™ II Power MOSFET in a Max247 package Datasheet - production data Features Order code VDSS @TjMAX RDS(on) max ID STY105NM50N 550 V < 0.022 Ω 110 A • Max247 worldwide best RDS(on) 1 2 • 100% avalanche tested 3 • Low input capacitance and gate charge • Low gate input resistance Max247 Applications • Switching applications Figure 1. Internal schematic diagram Description ' This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. * 6 $0Y Table 1. Device summary Order code Marking Package Packaging STY105NM50N 105NM50N Max247 Tube July 2013 This is information on a product in full production. Doc ID 022226 Rev 3 1/13 www.st.com Contents STY105NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 022226 Rev 3 STY105NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 110 A ID Drain current (continuous) at TC = 100 °C 88 A IDM (1) Drain current (pulsed) 440 A PTOT Total dissipation at TC = 25 °C 625 W Peak diode recovery voltage slope 15 V/ns VGS dv/dt(2) Tstg Tj Parameter Storage temperature °C - 55 to 150 Max. operating junction temperature °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 110 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.2 °C/W Rthj-amb Thermal resistance junction-ambient max 30 °C/W Value Unit Table 4. Avalanche characteriscics Symbol Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 17 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=Iar, VDD=50) 809 mJ Doc ID 022226 Rev 3 3/13 13 Electrical characteristics 2 STY105NM50N Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. Unit 500 V IDSS Zero gate voltage VDS = 500 V drain current (VGS = 0) VDS = 500 V, TC=125 °C 10 150 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 3 4 V 0.019 0.022 Ω Min. Typ. Max. Unit - 9600 - pF - 500 - pF - 22 - pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 52 A resistance 2 Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss(eq)(1) Equivalent output capacitance VDS = 0 to 400 V VGS = 0 - 1675 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.3 - Ω Qg Total gate charge - 326 - nC Qgs Gate-source charge - 40 - nC Qgd Gate-drain charge VDD = 400 V, ID = 110 A, VGS = 10 V (see Figure 15) - 180 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/13 Doc ID 022226 Rev 3 STY105NM50N Electrical characteristics Table 7. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 250 V, ID = 55 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) (see Figure 19) Rise time Turn-off delay time Fall time Min. Typ. Max. Unit - 47 - ns - 88 - ns - 353 - ns - 70 - ns Table 8. Source drain diode Symbol Parameter Test conditions ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Min. Typ. Max. Unit - 110 440 A A ISD = 110 A, VGS = 0 - 1.6 V ISD = 55 A, di/dt = 100 A/µs VDD = 100 V (see Figure 16) - 552 ns - 13.2 µC - 48 A - 672 ns - 19.5 µC - 58 A ISD = 55 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022226 Rev 3 5/13 13 Electrical characteristics 2.1 STY105NM50N Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM14793v1 ID (A) AM09125v1 K δ=0.5 ea is ar S(on RD ax ) is 100 n in th m tio by ra pe ited m i L 10µs 0.2 100µs 0.1 O 10 0.05 1ms -1 10 0.02 10ms 0.01 Tj=150°C Tc=25°C 1 0.1 0.1 Single pulse Sinlge pulse -2 10 1 10 -4 10 VDS(V) 100 Figure 4. Output characteristics ID (A) VGS=10V 7V 6V tp (s) AM14795v1 VDS = 10 V 200 160 160 120 120 5V 80 80 40 0 0 10 ID (A) 240 200 -1 10 Figure 5. Transfer characteristics AM14794v1 240 -2 -3 10 40 4V 8 4 12 16 20 VDS(V) Figure 6. Normalized BVDSS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 0 0 1.06 4 6 8 VGS(V) Figure 7. Static drain-source on-resistance AM14797v1 RDS(on) (Ω) 0.0200 1.08 2 VGS=10V 0.0195 1.04 0.0190 1.02 1.00 0.0185 0.98 0.96 0.94 0.92 -50 -25 6/13 0.0180 0 25 50 75 100 TJ(°C) 0.0175 0 Doc ID 022226 Rev 3 20 40 60 80 100 ID(A) STY105NM50N Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM14798v1 VDS VGS (V) (V) VDD=400V 12 ID=110A 350 10 Figure 9. Capacitance variations AM14799v1 C (pF) 10000 Ciss 300 VDS 8 250 6 200 1000 Coss 150 4 100 2 100 50 0 0 0 Qg(nC) 50 100 150 200 250 300 Figure 10. Normalized gate threshold voltage vs temperature AM16400v1 VGS(th) (norm) Crss 10 0 20 VDS(V) Figure 11. Normalized on-resistance vs temperature AM16401v1 RDS(on) (norm) ID = 250 µA 1.10 60 40 ID= 55 A VGS= 10 V 2.0 1.00 1.5 0.90 1.0 0.80 0.70 -50 -25 25 0 50 TJ(°C) 75 100 Figure 12. Source-drain diode forward vs temperature AM16402v1 VSD (V) 1.2 TJ=-50°C 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 13. Output capacitance stored energy AM16403v1 Eoss (µJ) 50 40 TJ= 25°C 1.0 30 0.8 20 TJ=150°C 0.6 0.4 0 20 40 10 60 80 100 ISD(A) Doc ID 022226 Rev 3 0 0 100 200 300 400 500 VDS(V) 7/13 13 Test circuits 3 STY105NM50N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 022226 Rev 3 10% AM01473v1 STY105NM50N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 022226 Rev 3 9/13 13 Package mechanical data STY105NM50N Table 9. Max247 mechanical data mm Dim. Min. 10/13 Typ. Max. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 Doc ID 022226 Rev 3 STY105NM50N Package mechanical data Figure 20. Max247 drawing 0094330_Rev_D Doc ID 022226 Rev 3 11/13 13 Revision history 5 STY105NM50N Revision history Table 10. Document revision history 12/13 Date Revision Changes 14-Sep-2011 1 First release. 15-Nov-2012 2 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves). Minor text changes. 29-Jul-2013 3 – Updated V(BR)DSS in Table 5: On /off states. – Updated figures in Section 3: Test circuits. Doc ID 022226 Rev 3 STY105NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 022226 Rev 3 13/13 13