STY112N65M5

STY112N65M5 Datasheet N-channel 650 V, 19 mΩ typ., 96 A MDmesh M5 Power MOSFET in a Max247 package Features 1 2 3 Order code VDS at TJ max. RDS(on) max. ID STY112N65M5 710 V 22 mΩ 96 A • Extremely low RDS(on) • • • Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Max247 Applications D(2, TAB) • Switching applications Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. G(1) S(3) AM01475v1_noZen Product status link STY112N65M5 Product summary Order code STY112N65M5 Marking 112N65M5 Package Max247 Packing Tube DS6035 - Rev 4 - July 2022 For further information contact your local STMicroelectronics sales office. www.st.com STY112N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 96 Drain current (continuous) at TC = 100 °C 61 IDM(1) Drain current (pulsed) 384 A PTOT Total power dissipation at TC = 25 °C 625 W IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.) 12 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 2400 mJ 15 V/ns VGS ID dv/dt(2) Tstg TJ Parameter Peak diode recovery voltage slope Storage temperature range Operating junction temperature range -55 to 150 A °C °C 1. Pulse width is limited by safe operating area. 2. ISD ≤ 96 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 400 V. Table 2. Thermal data Symbol DS6035 - Rev 4 Parameter Value Unit RthJC Thermal resistance, junction-to-case 0.2 °C/W RthJA Thermal resistance, junction-to-ambient 30 °C/W page 2/12 STY112N65M5 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 650 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 48 A VGS = 0 V, VDS = 650 V, TC = 125 Unit V VGS = 0 V, VDS = 650 V IDSS Max. 10 °C(1) 100 3 µA ±100 nA 4 5 V 19 22 mΩ 1. Specified by design, not tested in production. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions Min. Typ. Max. Unit - 16870 - pF - 365 - pF - 7 - pF - 1333 - pF - 350 - pF VDS = 100 V, f = 1 MHz, VGS = 0 V VDS = 0 to 520 V, VGS = 0 V RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.26 - Ω Qg Total gate charge VDD = 520 V, ID = 48 A - 350 - nC Qgs Gate-source charge VGS = 0 to 10 V - 97 - nC Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 118 - nC Qgd 1. Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated value. 2. Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated value. Table 5. Switching times Symbol Test conditions Min. Typ. Max. Unit td(v) Voltage delay time VDD = 400 V, ID = 64 A, - 267 - ns tr(v) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 79 - ns tf(i) Current fall time (see Figure 15. Test circuit for inductive load switching and diode recovery times and Figure 18. Switching time waveform) - 53 - ns - 140 - ns tc(off) DS6035 - Rev 4 Parameter Crossing time page 3/12 STY112N65M5 Electrical characteristics Table 6. Source-drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 96 A Source-drain current (pulsed) - 384 A 1.5 V Forward on voltage ISD = 96 A, VGS = 0 V - trr Reverse recovery time ISD = 96 A, di/dt = 100 A/µs, - 570 ns Qrr Reverse recovery charge VDD = 100 V - 17 µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 60 A trr Reverse recovery time ISD = 96 A, di/dt = 100 A/µs, - 695 ns Qrr Reverse recovery charge VDD = 100 V, TJ = 150 °C - 26 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 73 A IRRM 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS6035 - Rev 4 page 4/12 STY112N65M5 Electrical characteristics curves 2.1 Electrical characteristics (curves) Figure 2. Normalized transient thermal impedance Figure 1. Safe operating area ID (A) AM08892v1 AM09125v1 K S( on ) 0.2 D O is pe lim rat ite ion d in by t R his 102 ar ea δ=0.5 0.1 tp =100µs 0.05 -1 101 tp =1ms 10 0.02 0.01 tp =10ms 100 10-1 10-1 TJ = 150 °C, TC = 25 °C, Single pulse 100 101 tp Ƭ -2 VDS (V) 102 Figure 3. Typical output characteristics ID (A) Zth = K *RthJC δ = tp /Ƭ Single pulse V(BR)DSS AM08893v1 VGS=10V 10 -4 10 -2 -3 -1 10 10 tp (s) 10 Figure 4. Typical transfer characteristics AM08894v1 ID (A) 300 VGS (V) VDS (V) Figure 5. Normalized breakdown voltage vs temperature AM10399v1 V(BR)DSS (norm.) 1.08 ID = 1mA 1.06 Figure 6. Typical drain-source on-resistance 22 1.04 AM08896v1 RDS(on) (mΩ) VGS=10V 20 1.02 1.00 18 0.98 0.96 16 0.94 0.92 -50 -25 DS6035 - Rev 4 0 25 50 75 100 TJ (°C) 14 0 40 60 80 ID (A) page 5/12 STY112N65M5 Electrical characteristics curves Figure 7. Typical gate charge characteristics AM08897v1 VGS (V) VDS 12 VDD=520V ID=48A 10 Figure 8. Typical capacitance characteristics VDS (V) C (pF) 500 105 400 104 300 103 200 102 100 101 AM08898v1 Ciss 8 6 Coss 4 2 0 0 200 100 300 400 VGS(th) 100 10-1 0 Qg(nC) Figure 9. Normalized gate threshold vs temperature Crss RDS(on) (norm.) 2.1 AM08899v1 D=250µA 1.00 1.7 0.90 1.3 0.80 0.9 0 VGS=10V 0 25 50 75 100 TJ (°C) Figure 12. Typical switching energy vs gate resistance AM08902v1 E (μJ) AM08901v1 Eoss (µJ) 70 VDS (V) 102 AM08900v1 0.5 -50 -25 TJ (°C) Figure 11. Typical output capacitance stored energy 101 Figure 10. Normalized on-resistance vs temperature (norm) 0.70 -50 100 6000 60 5000 50 4000 40 3000 30 ID = 64 A Eon VDD = 400 V Eoff 2000 20 1000 10 0 0 DS6035 - Rev 4 0 100 200 300 400 500 600 VDS(V) Note: 0 10 20 30 40 RG(Ω) Eon including reverse recovery of a SiC diode. page 6/12 STY112N65M5 Test circuits 3 Test circuits Figure 14. Test circuit for gate charge behavior Figure 13. Test circuit for resistive load switching times VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 16. Unclamped inductive load test circuit Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A B B B L 100 µH fast diode 3.3 µF D G + RG VD 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ID V(BR)DSS VDS 90%ID 90%VDS VD IDM VGS 90%VGS ID VDD VDD 10%VDS 10%ID tr VDS td(V) AM01472v1 DS6035 - Rev 4 tf ID tc(off) AM05540v2 page 7/12 STY112N65M5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 Max247 package information Figure 19. Max247 package outline 0094330_5 DS6035 - Rev 4 page 8/12 STY112N65M5 Max247 package information Table 7. Max247 package mechanical data Dim. DS6035 - Rev 4 mm Min. Typ. Max. A 4.70 - 5.30 A1 2.20 - 2.60 b 1.00 - 1.40 b1 2.00 - 2.40 b2 3.00 - 3.40 c 0.40 - 0.80 D 19.70 - 20.30 e 5.35 - 5.55 E 15.30 - 15.90 L 14.20 - 15.20 L1 3.70 - 4.30 page 9/12 STY112N65M5 Revision history Table 8. Document revision history Date Revision Changes 20-Jan-2009 1 First release. 20-May-2011 2 Document status pomoted from preliminary data to datasheet. 03-May-2012 3 Section 4: Package mechanical data has been updated. Updated title, Internal schematic, Features and Description on cover page. 18-Jul-2022 4 Updated IAR value in Table 1. Absolute maximum ratings and updated Table 2. Thermal data. Minor text changes. DS6035 - Rev 4 page 10/12 STY112N65M5 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 Max247 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS6035 - Rev 4 page 11/12 STY112N65M5 IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS6035 - Rev 4 page 12/12