STY130NF20D

STY130NF20D N-channel 200 V, 0.01 Ω typ., 130 A STripFET™ II with fast recovery diode Power MOSFET in a Max247 package Datasheet - production data Features Order code VDS RDS(on) max. STY130NF20D 200 V 0.012 Ω ID PTOT 130 A 450 W • Exceptional dv/dt capability Max247 2 1 • 100% avalanche tested 3 • Low gate charge Applications • Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is produced using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. The device offers extremely fast switching performance thanks to the intrinsic fast body diode, making the device ideal for hard switching topologies. ' * 6 $0Y Table 1. Device summary Order code Marking Packages Packaging STY130NF20D 130NF20D Max247 Tube May 2014 This is information on a product in full production. DocID15300 Rev 4 1/14 www.st.com Contents STY130NF20D Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 9 DocID15300 Rev 4 STY130NF20D 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 130 A ID Drain current (continuous) at TC=100 °C 82 A IDM(1) Drain current (pulsed) 520 A PTOT Total dissipation at TC = 25 °C 450 W 130 A 800 mJ 25 V/ns - 55 to 150 °C Value Unit 0.28 °C/W 30 °C/W VGS IAR (1) EAS dv/dt(3) TJ Tstg Parameter Avalanche current, repetitive or not repetitive Single pulse avalanche energy (2) Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by Tjmax 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V 3. ISD ≤ 130 A, di/dt ≤ 1000 A/μs, peak VDS ≤ V(BR)DSS Table 3. Thermal resistance Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient DocID15300 Rev 4 3/14 14 Electrical characteristics 2 STY130NF20D Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS= 0, ID = 1 mA Min. Typ. Max. 200 Unit V VGS = 0, VDS = 200 V 10 μA VGS = 0, VDS =200 V, TC=125 °C 100 μA Gate body leakage current VDS = 0, VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 μA 3 4 V RDS(on) Static drain-source on- resistance VGS= 10 V, ID= 65 A 0.01 0.012 Ω Min. Typ. Max. Unit - 11100 - pF - 2190 - pF - 334 - pF - 1525 - pF - 1139 - pF IDSS IGSS Zero gate voltage drain current 2 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Test conditions VGS=0, VDS = 25 V, f=1 MHz, Equivalent capacitance time related VGS=0, VDS = o to 160 Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance f=1 MHz, ID=0 - 1.4 - Ω Qg Total gate charge - 338 - nC Qgs Gate-source charge - 47 - nC Qgd Gate-drain charge VDD=160 V, ID = 130 A VGS= 10 V (see Figure 16) - 183 - nC 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/14 DocID15300 Rev 4 STY130NF20D Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 100 V, ID= 65 A, RG= 4.7 Ω, VGS =10 V (see Figure 15) Rise time td(off) tf Turn-off delay time Fall time Min. Typ. Max. Unit - 232 - ns - 218 - ns - 283 - ns - 250 - ns Min. Typ. Max. Unit Table 7. Source drain diode Symbol Parameter Test conditions Source-drain current - 130 A (1) Source-drain current (pulsed) - 520 A (2) Forward on voltage ISD = 130 A, VGS=0 - 1.6 V trr Reverse recovery time - 190 ns Qrr Reverse recovery charge - 1.4 μC IRRM Reverse recovery current ISD = 130 A, di/dt = 100 A/μs, VDD= 100 V - 14 A - 257 ns - 2.4 μC - 18 A ISD ISDM VSD trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 130 A, di/dt = 100 A/μs, VDD= 100 V, Tj=150 °C 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300μs, duty cycle 1.5% DocID15300 Rev 4 5/14 14 Electrical characteristics 2.1 STY130NF20D Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance $0Y  RQ 6  2S /LP HUD LWH WLRQ GĆ ĆLQ E\ ĆWK ĆP LV D[ ĆDU Ć5 HD Ć ' LV ,' $  —V —V 7M ƒ& 7F ƒ& PV PV 6LQJOH SXOVH      9'69 Figure 4. Output characteristics Figure 5. Transfer characteristics $0Y ,' $ 9*6 9  $0Y ,' $ 9'6 9   9    9      9     Figure 6. Gate charge vs gate-source voltage 9*6 9 $0Y 9'6 9 9'6  9'' 9 ,' $    9'69       9*69 Figure 7. Static drain-source on-resistance $0Y 5'6RQ 2KP  9*6 9               6/14        4JQ&     DocID15300 Rev 4        ,'$ STY130NF20D Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy $0Y & S) $0Y (RVV —-   &LVV     &RVV   &UVV         Figure 10. Normalized gate threshold voltage vs temperature $0Y 9*6WK QRUP   9'69 ,' Ɨ$    9'69 Figure 11. Normalized on-resistance vs temperature $0Y 5'6RQ QRUP 9*6 Ć9                           7-ƒ& Figure 12. Source-drain diode forward characteristics $0Y 96' 9 7- ƒ&         7-ƒ& Figure 13. Normalized V(BR)DSS vs temperature 9%5'66 QRUP $0Y ,' ĆP$      7- ƒ&     7- ƒ&         ,6'$            7-ƒ& DocID15300 Rev 4 7/14 14 Electrical characteristics STY130NF20D Figure 14. Maximum avalanche energy vs starting Tj $0Y ($6 P- ,' Ć$ 9'' Ć9           8/14        7-ƒ& DocID15300 Rev 4 STY130NF20D 3 Test circuit Test circuit Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID15300 Rev 4 10% AM01473v1 9/14 14 Package mechanical data 4 STY130NF20D Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/14 DocID15300 Rev 4 STY130NF20D Package mechanical data Figure 21. Max247 drawing 0094330_Rev_D DocID15300 Rev 4 11/14 14 Package mechanical data STY130NF20D Table 8. Max247 mechanical data mm Dim. Min. 12/14 Typ. Max. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 DocID15300 Rev 4 STY130NF20D 5 Revision history Revision history Table 9. Document revision history Date Revision 27-Jan-2009 1 First release 29-Oct-2009 2 Some values have been updated in Table 4, Table 5, Table 6 and Table 7 11-Jan-2010 3 Document status promoted from preliminary data to datasheet. 4 – Modified: title – Modified: Figure 5, 6, 10, 11 and 13 – Minor text changes in the cover page. 16-May-2014 Changes DocID15300 Rev 4 13/14 14 STY130NF20D Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2014 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 DocID15300 Rev 4