STY139N65M5
Datasheet
N-channel 650 V, 14 mΩ typ., 130 A MDmesh M5 Power MOSFET
in a Max247 package
Features
1
2
3
Order code
VDS at TJ max.
RDS(on) max.
ID
STY139N65M5
710 V
17 mΩ
130 A
•
Extremely low RDS(on)
•
•
•
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Max247
Applications
D(2, TAB)
•
Switching applications
Description
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative
vertical process technology combined with the well-known PowerMESH horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
suitable for applications requiring high power and superior efficiency.
G(1)
S(3)
AM01475v1_noZen
Product status link
STY139N65M5
Product summary
Order code
STY139N65M5
Marking
139N65M5
Package
Max247
Packing
Tube
DS8904 - Rev 5 - July 2022
For further information contact your local STMicroelectronics sales office.
www.st.com
STY139N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Gate-source voltage
±25
V
Drain current (continuous) at TC = 25 °C
130
Drain current (continuous) at TC = 100 °C
78
IDM(1)
Drain current (pulsed)
520
A
PTOT
Total power dissipation at TC = 25 °C
625
W
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.)
12
A
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
2400
mJ
15
V/ns
VGS
ID
dv/dt(2)
Tstg
TJ
Parameter
Peak diode recovery voltage slope
Storage temperature range
Operating junction temperature range
-55 to 150
A
°C
°C
1. Pulse width is limited by safe operating area.
2. ISD ≤ 130 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 400 V.
Table 2. Thermal data
Symbol
DS8904 - Rev 5
Parameter
Value
Unit
RthJC
Thermal resistance, junction-to-case
0.2
°C/W
RthJA
Thermal resistance, junction-to-ambient
30
°C/W
page 2/12
STY139N65M5
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 3. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
Min.
VGS = 0 V, ID = 1 mA
Typ.
650
Zero gate voltage drain current
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 65 A
VGS = 0 V, VDS = 650 V, TC = 125
Unit
V
VGS = 0 V, VDS = 650 V
IDSS
Max.
10
°C(1)
100
3
µA
±100
nA
4
5
V
14
17
mΩ
1. Specified by design, not tested in production.
Table 4. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(tr)(1)
Equivalent capacitance time
related
Co(er)(2)
Equivalent capacitance energy
related
Test conditions
Min.
Typ.
Max.
Unit
-
15600
-
pF
-
365
-
pF
-
9
-
pF
-
1559
-
pF
-
360
-
pF
VDS = 100 V, f = 1 MHz, VGS = 0 V
VDS = 0 to 520 V, VGS = 0 V
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
1.2
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 65 A
-
363
-
nC
Qgs
Gate-source charge
VGS = 0 to 10 V
-
88
-
nC
Gate-drain charge
(see Figure 14. Test circuit for gate charge
behavior)
-
164
-
nC
Qgd
1. Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated
value.
2. Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated
value.
Table 5. Switching times
Symbol
Test conditions
Min.
Typ.
Max.
Unit
td(v)
Voltage delay time
VDD = 400 V, ID = 80 A,
-
295
-
ns
tr(v)
Voltage rise time
RG = 4.7 Ω, VGS = 10 V
-
56
-
ns
tf(i)
Current fall time
(see Figure 15. Test circuit for inductive
load switching and diode recovery times
and Figure 18. Switching time waveform)
-
37
-
ns
-
84
-
ns
tc(off)
DS8904 - Rev 5
Parameter
Crossing time
page 3/12
STY139N65M5
Electrical characteristics
Table 6. Source-drain diode
Symbol
ISD
ISDM
(1)
VSD(2)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
130
A
Source-drain current (pulsed)
-
520
A
1.5
V
Forward on voltage
ISD = 130 A, VGS = 0 V
-
trr
Reverse recovery time
ISD = 130 A, di/dt = 100 A/µs,
-
570
ns
Qrr
Reverse recovery charge
VDD = 100 V
-
15
µC
IRRM
Reverse recovery current
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
-
53
A
trr
Reverse recovery time
ISD = 130 A, di/dt = 100 A/µs,
-
720
ns
Qrr
Reverse recovery charge
VDD = 100 V, TJ = 150 °C
-
24
µC
Reverse recovery current
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
-
68
A
IRRM
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DS8904 - Rev 5
page 4/12
STY139N65M5
Electrical characteristics curves
2.1
Electrical characteristics (curves)
Figure 2. Normalized transient thermal impedance
Figure 1. Safe operating area
ID
(A)
AM12612v1
AM09125v1
K
δ=0.5
ea
ar
102
is n)
th S(o
in R D
n
y
tio b
ra ted
pe i
O s lim
i
101
tp =10µs
0.2
tp =100µs
0.1
tp =1ms
0.05
-1
10
0.02
tp =10ms
100
100
101
tp
Ƭ
-2
VDS (V)
102
Figure 3. Typical output characteristics
ID (A)
300
Zth = K *RthJC
δ = tp /Ƭ
Single pulse
V(BR)DSS
TJ = 150 °C,
TC = 25 °C,
Single pulse
10-1
10-1
0.01
AM08893v2
VGS=10V
10 -4
10
-2
-3
-1
10
10
tp (s)
10
Figure 4. Typical transfer characteristics
AM08894v2
ID
(A)
VDS=30V
300
8V
250
250
200
200
7V
150
150
100
100
6V
50
0
0
50
5V
5
10
VDS(V)
15
Figure 5. Normalized breakdown voltage vs temperature
AM10399v1
V(BR)DSS
(norm.)
1.08
ID = 1mA
1.06
0
3
5
6
7
8
9
VGS(V)
Figure 6. Typical drain-source on-resistance
RDS(on)
(mΩ)
16
1.04
4
AM12613v1
VGS=10V
15
1.02
14
1.00
13
0.98
0.96
12
0.94
0.92
-50 -25
DS8904 - Rev 5
0
25
50
75 100
TJ (°C)
11
0
40
60
80
100
ID (A)
page 5/12
STY139N65M5
Electrical characteristics curves
Figure 7. Typical gate charge characteristics
VGS
(V)
AM12614v1
12
VDS
VDD=520V
ID=65A
10
Figure 8. Typical capacitance characteristics
VDS
(V)
C
(pF)
500
105
400
104
300
103
200
102
100
101
AM12615v1
Ciss
8
6
4
2
0
100
0
200
300
400
Coss
0
Qg(nC)
Figure 9. Normalized gate threshold vs temperature
100
10-1
100
101
VDS (V)
102
Figure 10. Normalized on-resistance vs temperature
RDS(on)
(norm.)
2.1
AM08899v1
VGS(th)
Crss
(norm)
1.10
ID= 250µA
AM08900v1
ID = 65A
VGS= 10V
1.00
1.7
0.90
1.3
0.80
0.70
-50 -25
0
25
50
75 100
TJ (°C)
Figure 11. Typical output capacitance stored energy
8000
6000
50
5000
40
4000
30
3000
TJ (°C)
AM12617v1
ID=80A
VDD=400V
TJ =25°C
2000
20
1000
10
DS8904 - Rev 5
75 100
E (μJ)
60
0
0
50
Figure 12. Typical switching energy vs gate resistance
AM12616v1
Eoss
(µJ)
70
25
-25
0
100
200 300
400 500 600
VDS(V)
Note:
0
10
20
30
40
RG(Ω)
Eon including reverse recovery of a SiC diode.
page 6/12
STY139N65M5
Test circuits
3
Test circuits
Figure 14. Test circuit for gate charge behavior
Figure 13. Test circuit for resistive load switching times
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 16. Unclamped inductive load test circuit
Figure 15. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
A
B
B
B
L
100 µH
fast
diode
3.3
µF
D
G
+
RG
VD
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
_
D.U.T.
Vi
pulse width
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ID
V(BR)DSS
VDS
90%ID
90%VDS
VD
IDM
VGS
90%VGS
ID
VDD
VDD
10%VDS
10%ID
tr
VDS
td(V)
AM01472v1
DS8904 - Rev 5
tf
ID
tc(off)
AM05540v2
page 7/12
STY139N65M5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
Max247 package information
Figure 19. Max247 package outline
0094330_5
DS8904 - Rev 5
page 8/12
STY139N65M5
Max247 package information
Table 7. Max247 package mechanical data
Dim.
DS8904 - Rev 5
mm
Min.
Typ.
Max.
A
4.70
-
5.30
A1
2.20
-
2.60
b
1.00
-
1.40
b1
2.00
-
2.40
b2
3.00
-
3.40
c
0.40
-
0.80
D
19.70
-
20.30
e
5.35
-
5.55
E
15.30
-
15.90
L
14.20
-
15.20
L1
3.70
-
4.30
page 9/12
STY139N65M5
Revision history
Table 8. Document revision history
Date
Revision
09-Mar-2012
1
04-Apr-2012
2
19-Apr-2012
3
24-Jan-2013
4
18-Jul-2022
5
Changes
First release.
Inserted new Section 2.1: Electrical characteristics (curves).
Updated Section 4: Package mechanical data.
Document promoted from preliminary data to production data.
Updated Section 4: Package mechanical data.
– Minor text changes
– Modified: IAR EAS values on Table 2
Updated title, Internal schematic, Features and Description on cover page.
Updated IAR value in Table 1. Absolute maximum ratings and updated Table 2. Thermal data.
Minor text changes.
DS8904 - Rev 5
page 10/12
STY139N65M5
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
Max247 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS8904 - Rev 5
page 11/12
STY139N65M5
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DS8904 - Rev 5
page 12/12