STY145N65M5

STY145N65M5 N-channel 650 V, 0.012 Ω typ., 138 A MDmesh™ M5 Power MOSFET in a Max247 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID STY145N65M5 710 V 0.015 Ω 138 A • • • • 3 Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested 2 1 Applications Max247 • Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency. Table 1: Device summary Order code Marking Package Packaging STY145N65M5 145N65M5 Max247 Tube November 2015 DocID023718 Rev 3 This is information on a product in full production. 1/12 www.st.com Contents STY145N65M5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/12 Max247 package information ............................................................ 9 Revision history ............................................................................ 11 DocID023718 Rev 3 STY145N65M5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS Parameter Value Unit Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 138 A ID Drain current (continuous) at TC = 100 °C 87 A (1) IDM Drain current (pulsed) 552 A PTOT Total dissipation at TC = 25 °C 625 W IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 12 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 2420 mJ 15 V/ns dv/dt (2) Tstg Tj Peak diode recovery voltage slope Storage temperature - 55 to 150 Max. operating junction temperature 150 °C Notes: (1) (2) Pulse width limited by safe operating area. ISD ≤ 138 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.2 °C/W Rthj-amb Thermal resistance junction-ambient max 30 °C/W DocID023718 Rev 3 3/12 Electrical characteristics 2 STY145N65M5 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 650 Unit V VGS = 0 V, VDS = 650 V 10 µA VGS = 0 V, VDS = 650 V, TC = 125 °C 100 µA Gate-body leakage current VDS = 0 V, VGS = ±25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 69 A 0.012 0.015 Ω Min. Typ. Max. Unit - 18500 - pF - 413 - pF - 11 - pF - 415 - pF - 1950 - pF IDSS Zero gate voltage drain current IGSS 3 Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS= 100 V, f = 1 MHz, VGS = 0 V Co(er) Equivalent output capacitance energy related (2) Co(tr) Equivalent output capacitance time related RG Intrinsic gate resistance f = 1 MHz, open drain - 0.7 - Ω Qg Total gate charge - 414 - nC Qgs Gate-source charge - 114 - nC Qgd Gate-drain charge VDD = 520 V, ID = 69 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 164 - nC (1) VGS = 0, VDS = 0 to 520 V Notes: (1) Co(er) is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS (2) Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 DocID023718 Rev 3 STY145N65M5 Electrical characteristics Table 6: Switching times Symbol Parameter td(V) Voltage delay time tr(V) Voltage rise time tf(i) Current fall time tC(off) Crossing time Test conditions Min. Typ. Max. Unit VDD = 400 V, ID = 85 A RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times" and Figure 19: "Switching time waveform") - 255 - ns - 11 - ns - 82 - ns - 88 - ns Min. Typ. Max. Unit Table 7: Source drain diode Symbol ISD Test conditions Source-drain current - 138 A (1) Source-drain current (pulsed) - 552 A (2) Forward on voltage VGS = 0 V, ISD = 138 A - 1.5 V ISD = 138 A, di/dt = 100 A/µs, VDD = 100 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") ISDM, VSD Parameter trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 138 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 568 ns - 14.5 µC - 51 A - 728 ns - 24.5 µC - 67 A Notes: (1) (2) Pulse width is limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID023718 Rev 3 5/12 Electrical characteristics 2.2 STY145N65M5 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance AM09125v1 K δ=0.5 0.2 0.1 0.05 10 -1 0.02 0.01 Zth=k Rthj-c d=tp/t Single pulse tp t -2 10 -4 10 AM17901v1 VGS=10V 10 -2 10 tp(s) -1 Figure 5: Transfer characteristics Figure 4: Output characteristics ID (A) 10 -3 AM17902v1 ID (A) 9V VDS=30V 300 300 8V 250 250 200 200 150 150 7V 100 100 50 50 6V 0 0 5 10 15 20 25 Figure 6: Gate charge vs gate-source voltage 6/12 0 VDS(V) 0 1 2 3 4 5 6 7 8 VGS(V) Figure 7: Static drain-source on-resistance DocID023718 Rev 3 STY145N65M5 Electrical characteristics Figure 9: Normalized gate threshold voltage vs temperature Figure 8: Capacitance variations AM15553v1 C (pF) AM08899v1 VGS(th) (norm) 1.10 ID= 250µA VDS= VGS 100000 Ciss 10000 1.00 1000 0.90 Coss f=1 MHz 100 0.80 10 Crss 0.70 -50 -25 1 0.1 1 10 100 VDS(V) Figure 10: Normalized on-resistance vs temperature 25 50 TJ(°C) 75 100 Figure 11: Normalized V(BR)DSS vs temperature AM08900v1 RDS(on) 0 AM10399v1 V(BR)DSS (norm) (norm) 1.08 2.1 ID = 69A VGS= 10V ID = 1mA 1.06 1.7 1.04 1.02 1.3 1.00 0.98 0.9 0.96 0.94 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 12: Output capacitance stored energy 0.92 -50 -25 0 25 50 75 100 TJ(°C) Figure 13: Switching losses vs gate resistance AM15555v1 E (µJ) Eon VDD=400 V VGS=10 V ID=85 A 9000 8000 7000 6000 5000 Eoff 4000 3000 2000 1000 0 0 10 20 30 40 RG(W) The previous figure Eon includes reverse recovery of a SiC diode. DocID023718 Rev 3 7/12 Test circuits 3 STY145N65M5 Test circuits Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform Con cept waveform for Indu ctive Load Turn-off Id 90%Vds 90%Id Tdelay -off Vgs 90%Vgs on Vgs(I(t )) 10%Id 10%Vds Vds Trise Tfall Tcross --over 8/12 DocID023718 Rev 3 AM05540v2_for_M5 STY145N65M5 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 4.1 Max247 package information Figure 20: Max247 package outline 0094330_Rev_D DocID023718 Rev 3 9/12 Package information STY145N65M5 Table 8: Max247 package mechanical data mm Dim. 10/12 Min. Typ. Max. A 4.70 - 5.30 A1 2.20 - 2.60 b 1.00 - 1.40 b1 2.00 - 2.40 b2 3.00 - 3.40 c 0.40 - 0.80 D 19.70 - 20.30 e 5.35 - 5.55 E 15.30 - 15.90 L 14.20 - 15.20 L1 3.70 - 4.30 DocID023718 Rev 3 STY145N65M5 5 Revision history Revision history Table 9: Document revision history Date Revision 25-Sep-2012 1 First release. 17-Jan-2013 2 Modified: IAR and EAS values Modified: typical values on Table 5, 6 and 7 3 Updated title, features and description on cover page. Document status promoted from preliminary to production data. Modified: Table 2: "Absolute maximum ratings" and Table 3: "Thermal data" Updated: Figure 4: "Output characteristics" and Figure 5: "Transfer characteristics" Minor text changes. 13-Nov-2015 Changes DocID023718 Rev 3 11/12 STY145N65M5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 12/12 DocID023718 Rev 3