STY80NM60N

STY80NM60N N-channel 600 V, 0.030 Ω, 74 A, MDmesh™ II Power MOSFET Max247 Features Type VDSS @ TJmax RDS(on) max ID STY80NM60N 650 V < 0.035 Ω 74 A ■ The worldwide best RDS(on) in Max247 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3 1 Max247 Applications ■ Switching applications Figure 1. Description Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STY80NM60N 80NM60N Max247 Tube July 2011 Doc ID 14210 Rev 6 1/12 www.st.com 12 Contents STY80NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 5 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 14210 Rev 6 STY80NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 74 A ID Drain current (continuous) at TC = 100 °C 46 A Drain current (pulsed) 296 A Total dissipation at TC = 25 °C 447 W Peak diode recovery voltage slope 15 V/ns –55 to 150 °C 150 °C Value Unit 0.28 °C/W IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 74 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 30 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 25 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAS, VDD = 50 V) 2 J Doc ID 14210 Rev 6 3/12 Electrical characteristics 2 STY80NM60N Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS = 0) ID = 1 mA dv/dt (1) Drain source voltage slope VDD = 480 V, ID = 74 A, VGS = 10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, TC = 125 °C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 37 A 600 V 48 2 3 V/ns 0.030 0.035 Ω 1. Characteristic value at turn off on inductive load. Table 6. Symbol Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS=15 V, ID = 37 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Min. Typ. Max. Unit 12 S VDS = 50 V, f = 1 MHz, VGS = 0 10100 455 26 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 1300 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 74 A, VGS = 10 V, (see Figure 15) 360 85 160 nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain 2.0 Ω Coss eq. (2) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/12 Doc ID 14210 Rev 6 STY80NM60N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. Unit 50 65 440 200 VDD = 300 V, ID = 37 A RG = 4.7 Ω VGS = 10 V (see Figure 14) ns ns ns ns Source drain diode Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 74 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 74 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25 °C (see Figure 16) 700 25 65 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 74 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) 840 30 69 ns µC A trr Qrr IRRM trr Qrr IRRM 74 296 A A 1.5 V 1. Pulse width limited by safe operating area . 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 14210 Rev 6 5/12 Electrical characteristics STY80NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 Doc ID 14210 Rev 6 STY80NM60N Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations HV42890 HV42900 VGS(V) C(pF) Ciss 12 VGS=10V 10000 VDD=480V 10 ID=74A 1000 8 Coss f=1MHz VGS=0 6 100 Crss 4 10 2 1 0 0 100 200 300 400 Qg(nC) 1 10 100 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature Doc ID 14210 Rev 6 7/12 Test circuits 3 STY80NM60N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 Figure 19. Switching time waveform Doc ID 14210 Rev 6 STY80NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 14210 Rev 6 9/12 Package mechanical data Table 9. STY80NM60N Max247 mechanical data mm Dim. Min. Typ. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 Figure 20. Max247 drawing 0094330_Rev_D 10/12 Max. Doc ID 14210 Rev 6 STY80NM60N 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 29-Nov-2007 1 First release. 04-Dec-2007 2 Header has been corrected. 04-Aug-2008 3 Document status promoted: from preliminary data to datasheet. 14-Nov-2008 4 Figure 13: Normalized BVDSS vs temperature has been corrected. 04-Feb-2009 5 Figure 7: Static drain-source on resistance has been corrected. 06-Jul-2011 6 Modified IDSS value in Table 5: On/off states. Doc ID 14210 Rev 6 11/12 STY80NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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