STZT2907A

STZT2907 STZT2907A MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE STZT2222 AND STZT2222A RESPECTIVELY 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter STZT2907 Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Collector Current Total Dissipation at T c = 2 5 C Storage Temperature Max. Operating Junction Temperature o Value STZT2907A -60 -60 -5 -0.8 -1.5 -65 to 150 150 -60 -40 Unit V V V A W o o C C 1/4 October 1995 STZT2907/STZT2907A THERMAL DATA R thj-amb • R thj-tab • T hermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 83.3 10 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEX IBEX V (BR)CBO Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (V BE = 0 .5V) Base Cut-off Current (V BE = 0 .5V) Collector-Base Breakdown Voltage (I E = 0 ) Test Conditions V CB = r ated V CBO V CB = r ated V CBO V CE = - 30 V V CE = - 30 V I C = - 10 µ A T amb = 1 25 C o Min. Typ. Max. -20 -10 -50 -50 Unit nA µA nA nA V for STZT2222A for STZT2222A -60 V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0 ) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = - 10 mA for S TZT2907 for S TZT2907A I E = -10 µ A -40 -60 -5 V V V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = - 150 mA I C = - 500 mA I C = - 150 mA I C = - 500 mA I B = - 15 mA I B = - 50 mA I B = - 15 mA I B = - 50 mA - 10 V 35 75 - 10 V 50 100 - 10 V 75 100 100 10 50 200 -0.4 -1.6 -1.3 -2.6 V V V V I C = - 0.1 mA V CE = for S TZT2907 for S TZT2907A I C = - 1 mA V CE = for S TZT2907 for S TZT2907A I C = - 10 mA V CE = for S TZT2907 for S TZT2907A I C = - 150 mA V CE = I C = - 500 mA V CE = for S TZT2907 for S TZT2907A -10 V -10 V 300 fT C CBO C EBO td tr t on ts tf t off Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-off Time I C = - 10 mA V CE = - 10 V f = 100 MHz IE = 0 IC = 0 V CB = - 10 V V EB = - 2 V f = 1 MHz f = 1 MHz MHz 8 30 10 40 45 pF pF ns ns ns ns ns ns I C = - 150 mA V CC = -30 V I B1 = - 15 mA I C = - 150 mA V CC = -30 V I B1 = - I B1 = -15 mA 80 30 100 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 STZT2907/STZT2907A SOT223 MECHANICAL DATA mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8 DIM. L l2 e1 a b f d c e4 C l1 B C E g P008B 3/4 STZT2907/STZT2907A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4