STZT5401

STZT5401 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Collector Current Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value -180 -160 -5 -0.6 -1.5 -65 to 150 150 Unit V V V A W o o C C 1/4 October 1997 STZT5401 THERMAL DATA R t hj-amb • R thj-tab • T hermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0 ) Emitter Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions V CB = - 120 V V EB = -3 V I C = - 100 µ A -160 Min. Typ. Max. -50 -50 Unit nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = - 1 mA -150 V I C = - 10 µ A -5 V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = - 10 mA I C = - 50 mA I C = - 10 mA I C = - 50 mA I C = - 1 mA I C = - 10 mA I C = - 50 mA I C = - 1 mA I B = - 1 mA I B = - 5 mA I B = - 1 mA I B = - 5 mA V CE = -5 V V CE = -5 V V CE = -5 V V CE = - 10 V f = 1 KHz f = 1 MHz f = 1 MHz 5 50 60 50 40 100 -0.2 -0.5 -1 -1 240 200 400 6 V V V V hfe fT C CBO F Small Signal Current Gain Transition Frequency Collector-Base Capacitance Noise Figure I C = - 10 mA V CE = - 10 V IE = 0 V CB = - 10 V MHz pF dB f = 1 KHz ∆F = 200 Hz R G = 1 K Ω I C = - 0.25 mA V CE = - 5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 STZT5401 SOT-223 MECHANICAL DATA mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8 DIM. L l2 e1 a b f d c e4 C l1 B C E g P008B 3/4 STZT5401 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4