T1030-600W

T1020-600W T1030-600W ® SNUBBERLESS TRIAC FEATURES ■ ■ ■ ■ ■ ITRMS = 10 A VDRM = VRRM = 600V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 A2 A1 G DESCRIPTION The T1020-600W and 1030-600W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM ) s ( ct Non repetitive surge peak on-state current (Tj initial = 25°C ) r P e I2t Value (half-cycle, 50 Hz) t e l o dI/dt s b O Tstg Tj Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs. Storage temperature range Operating junction temperature range Symbol VDRM VRRM r P e t le Parameter Repetitive peak off-state voltage Tj = 125°C September 2001 - Ed: 1A od A1 A2 ISOWATT220AB (Plastic) o s b O - u d o I2t G Parameter RMS on-state current (360° conduction angle) uc ) s t( Value Unit Tc= 90°C 10 A tp = 16.7 ms (1 cycle, 60 Hz) 110 A tp = 10 ms (1/2 cycle, 50 Hz) 125 tp = 10 ms 78 A2s Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 - 40 to + 150 - 40 to + 125 °C Value Unit 600 V 1/5 T1020-600W / 1030-600W THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 50 °C/W Rth(j-c) Junction to case for A.C (360° conduction angle) 3.0 °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 100 mW PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions Quadrant VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX T1020 T1030 Unit 20 30 mA VGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.5 VGD VD=VDRM RL=3.3kΩ Tj= 125°C I-II-III MIN 0.2 tgt IG=500mA VD=VDRM dlG/dt= 3Aµs Tj= 25°C I-II-III TYP 2 IH * IT= 100mA Tj= 25°C MAX MAX d o r 1.5 V MAX 10 µA MAX 2 mA Gate open VTM * ITM= 14A tp= 380µs Tj= 25°C IDRM IRRM VDRM rated VRRM rated Tj= 25°C dV/dt * Linear slope up to Gate open VD=67%VDRM (dV/dt)c * (dI/dt)c = 5.3 A/ms (see note) (s) t c u b O - Tj= 125°C Tj= 125°C P e let so Tj= 125°C 35 V ) s t( V uc µs 50 MIN 200 300 V/µs MIN 10 20 V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a snuber R-C network accross T1020W / T1030W triacs. d o r P e t e l o s b O 2/5 T1020-600W / 1030-600W Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. 180 O = 180 12 = 120 10 = 60 6 = 30 14 o Rth = 0 o C/W o 2.5 C/W o 5 C/W 7 o C/W 12 o 10 o = 90 8 -105 2 2 3 4 5 6 7 8 9 10 Fig.3 : RMS on-state current versus case temperature. I T(RMS) -115 2 I T(RMS) (A) 1 -95 6 o 4 0 0 -85 8 o 4 o Tamb ( C) -125 0 0 ) s t( 10 20 30 40 50 60 70 80 90 100 110 120 130 c u d Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. Zth/Rth (A) e t le 1 12 o r P Zth(j-c) 10 o 6 (s) 4 2 t c u o Tcase( C) 0 10 20 30 40 50 60 o s b O 0.1 = 180 8 0 Tcase (oC) P (W) P(W) 14 od 70 r P e 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. t e l o Igt[Tj] o Igt[Tj=25 C] Ih[Tj] Ih[Tj=25 o C] bs 2.6 Zth(j-a) 0.01 tp(s) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 120 o Tj initial = 25 C 2.4 O 100 2.2 2.0 80 Igt 1.8 1.6 1.4 60 Ih 1.2 40 1.0 0.8 20 0.6 0.4 Number of cycles Tj(oC) -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 T1020-600W / 1030-600W Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp  10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A2 s) I TM (A) 1000 1000 Tj initial = 25 oC I TSM Tj initial o 25 C I2 t 100 100 10 10 Tj max Vto =0.9V Rt =0.038 Tj max VTM (V) tp(ms) 1 1 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 c u d e t le ) s ( ct u d o r P e t e l o s b O 4/5 o s b O - o r P 5 5.5 ) s t( 6 T1020-600W / 1030-600W PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.40 2.70 0.094 H 10.00 10.40 0.394 L2 28.60 L4 9.80 L6 15.90 e t le L7 so Diam ■ ■ ■ ■ Cooling method: C Marking: Type number Weight: 2.1 g Recommended torque value: 0.55 m.N. Maximum torque value: 0.70 m.N. ) s ( ct c u d 16.00 typ. L3 ■ Inches 9.00 3.00 30.60 ) s t( 0.106 0.409 0.630 typ. o r P 1.125 9.30 0.354 0.366 3.20 0.118 0.126 10.60 1.205 0.386 0.417 16.40 0.626 0.646 b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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