T1210T-6I

T12T Snubberless™, logic level and standard 12 A Triacs Datasheet - production data Features A2 • Medium current Triac • High static and dynamic commutation G • Low thermal resistance with clip bonding A1 • Packages is RoHS (2002/95/EC) compliant • 600 V VRM A1 A2 • UL certified (ref. file E81734) G Applications TO-220AB insulated (T12xxT-6I) • Value sensitive application • General purpose ac line load switching • Motor control circuits in power tools Table 1. Device summary Part number Symbol Value T1210T-6I IGT 3Q logic level 10 mA T1220T-6I T1235T-6I IGT 3Q Snubberless 20 / 35 mA T1225T-6I IGT 4Q standard 25 mA • Small home appliances, lighting • Inrush current limiting circuits • Overvoltage crowbar protection Description Available in through-hole, the T12T series of Triacs can be used as on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This series can be designed in many value sensitive appliances thanks to the parameters guidance provided in the following pages. Provides insulation rated at 2500 V rms (TO-220AB insulated package). TM: Snubberless is a trademark of STMicroelectronics October 2013 This is information on a product in full production. DocID16487 Rev3 1/8 www.st.com Characteristics 1 T12T Characteristics Table 2. Absolute maximum ratings (limiting values; Tj = 25 °C, unless otherwise specified) Symbol IT(RMS) ITSM I ²t dI/dt VDSM, VRSM IGM PG(AV) Tstg Tj 2/8 Parameter On-state rms current (full sine wave) Value Unit Tc = 88 °C 12 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz tp = 20 ms 90 F = 60 Hz tp = 16.7 ms 95 I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT tr ≤ 100 ns F = 60 Hz Non repetitive surge peak off-state voltage Peak gate current A 54 A ²s Tj = 125 °C 50 A/µs tp = 10 ms Tj = 25 °C VDRM, VRRM + 100 V tp = 20 µs Tj = 125 °C 4 A Tj = 125 °C 1 W Storage junction temperature range - 40 to + 150 °C Operating junction temperature range - 40 to + 125 °C Average gate power dissipation DocID16487 Rev3 T12T Characteristics Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) T12xxT Symbol Test conditions Quadrant Unit T1210T T1220T T1225T T1235T IGT (1) VGT I - II - III VD = 12 V RL = 30 Ω Tj = 25 °C VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C IH (2) IT = 500 mA mA MAX. 1.3 V ALL MIN. 0.2 V MAX. IV IG = 1.2 IGT Tj = 150 15 20 30 20 35 40 50 MAX. Tj = 125 °C VD = 67% VDRM, gate open 10 °C(3) 40 40 60 80 100 1000 100 2000 50 500 50 1000 MIN. V/µs Tj = 125 °C (dV/dt)c = 10 V/µs 7 7 3 3 Without snubber 6 12 MIN. (dV/dt)c = 0.1 V/µs Tj = 150 °C(3) (dV/dt)c = 10 V/µs mA mA 30 (dV/dt)c = 0.1 V/µs (dI/dt)c (2) 35 ALL II dV/dt (2) 25 40 I - III IL 20 IV VD = VDRM, RL = 3.3 kΩ, VGD 10 MAX. A/ms 3 3 1 1 Without snubber 3 10 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1. 3. Derating information for excess temperature above Tj max. Table 4. Static characteristics Symbol VT (1) Test conditions Value Unit ITM = 17 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V Threshold voltage Tj = 125 °C MAX. 0.85 V RD (1) Dynamic resistance Tj = 125 °C MAX. 35 mΩ 5 µA IDRM IRRM VDRM = VRRM VTO (1) Tj = 25 °C MAX. Tj = 125 °C Tj = 150 °C(2) VD = 0.9 x VDRM 1 mA TYP. 1.9 1. For both polarities of A2 referenced to A1. 2. Derating information for excess temperature above Tj max. DocID16487 Rev3 3/8 8 Characteristics T12T Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 2.6 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1. Maximum power dissipation versus rms on-state current (full cycle) Figure 2. On-state rms current versus case temperature (full cycle) P(W) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IT(RMS) (A) 13 12 α=180° α=180° 11 10 9 8 7 6 5 180° 4 3 2 1 IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 10 11 Figure 3. On-state rms current versus ambient temperature IT(RMS) (A) 3.0 TC(°C) 0 12 0 25 50 75 100 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K=[Zth/Rth] Zth(j-c) Zth(j-a) α=180° 2.5 125 2.0 1.0E -01 1.5 1.0 0.5 0.0 tP(s) Ta (°C) 0 25 50 75 100 125 Figure 5. On state characteristics (maximum values) 100 1.0E -02 1.0E -03 1.0E -02 1.0E -01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6. Surge peak on state current versus number of cycles ITM (A) 100 ITSM (A) 90 80 t=20ms 70 One cycle Non repetitive Tj initial=25°C 60 10 50 40 Repetitive TC=88 °C 30 Tj=125 °C 20 Tj=25 °C 1 0 4/8 1 Tj max : Vto = 0.85 V Rd = 35 mΩ VTM (V) 2 10 Number of cycles 0 3 4 5 1 DocID16487 Rev3 10 100 1000 T12T Characteristics Figure 7. Non repetitive surge peak on state current for a sinusoidal Figure 8. Relative variation of gate trigger current and gate trigger voltage versus junction temperature ITSM (A), I²t (A²s) 1000 3.0 Tj initial=25°C IGT, VGT [Tj] / IGT, VGT [Tj=25 °C] typical values ITSM 2.5 dI/dt limitation: 50 A/µs IGT Q3 2.0 IGT Q1-Q2 1.5 100 I²t VGT Q1-Q2-Q3 1.0 0.5 2 tP(ms) pulse with width tp < 10 ms and corresponding value of I T 10 0.01 0.10 1.00 10.00 Figure 9. Relative variation of holding current and latching current versus junction temperature 2.5 IH, IL [T j] / IH, IL [T j=25 °C] Tj(°C) 0.0 - 50 -25 0 25 50 75 100 125 Figure 10. Relative variation of critical rate of decrease of main current versus (dV/dt)c 7 dV/dt [T j] / dV/dt [T j=125 °C] typical values VD=VR=402 V typical values Logic Level and Snubberless types 6 2.0 5 1.5 4 3 1.0 IL 2 IH 0.5 1 Tj(°C) 0.0 -50 -25 0 25 50 75 100 125 Figure 11. Relative variation of critical rate of decrease of main current versus junction temperature 8 (dI/dt) C [T j] / (dI/dt) c [T j=125 °C] T j(°C) 0 25 50 75 100 125 Figure 12. Leakage current versus junction temperature for different values of blocking voltage (typical values) 1.0E+00 IDRM/IRRM [Tj;V DRM/ VRRM]/IDRM/IRRM [Tj=125°C;7 00V] VDRM=VRRM =600 V 7 VDRM=VRRM =400 V 6 1.0E-01 5 4 3 VDRM=VRRM =200 V 1.0E-02 2 1 0 25 T j(°C) 50 75 100 125 1.0E-03 25 DocID16487 Rev3 T j(°C) 50 75 100 125 5/8 8 Package information 2 T12T Package information • Epoxy meets UL94, V0 • Lead-free packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-220AB insulated dimensions Dimensions Ref. Millimeters Min. A 15.20 a1 C B ØI Typ. Max. Inches Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 b2 L F A I4 l3 c2 a1 l2 a2 M b1 c1 e M 6/8 DocID16487 Rev3 2.60 0.102 T12T 3 Ordering information Ordering information Figure 13. Ordering information scheme T 12 10 T - 6 I Triac Current 12 = 12 A Sensitivity 10 = 10 mA 20 = 20 mA 25 = 25 mA 35 = 35 mA Application specific Voltage 6 = 600 V Package I = TO-220AB-Ins. Table 7. Ordering information 4 Order code Marking T1210T-6I T1210T-6I T1220T-6I T1220T-6I T1225T-6I T1225T-6I T1235T-6I T1235T-6I Package Weight Base qty Delivery mode TO-220AB-ins. 2.3 g 50 Tube Revision history Table 8. Document revision history Date Revision Changes 03-Dec-2009 1 Initial release. 18-Jan-2010 2 Updated pag.1. 16-Sep-2013 3 Updated: Features. Replaced order codes with part numbers in Table 1. DocID16487 Rev3 7/8 8 T12T Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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