T1210T-8T

T1210T-8T Datasheet 12 A 800 V logic level Triac in TO-220AB package Features A2 • • • G Medium current Triac Three quadrants ECOPACK2 compliant Applications A1 A2 G A2 A1 • • • • • • General purpose AC line load switching Motor control circuits Small home appliances Lighting Inrush current limiting circuits Overvoltage crowbar protection Description TO-220AB Available in through-hole package, the T1210T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven by a microcontroller due to its 10 mA gate current requirement. Product status link T1210T-8T Product summary Order code T1210T-8T Package TO-220AB IT(RMS) 12 A VDRM/VRRM 800 V VDSM/VRSM 900 V IGT 10 mA DS10320 - Rev 2 - September 2019 For further information contact your local STMicroelectronics sales office. www.st.com T1210T-8T Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Value Unit Tc = 131 °C 12 A F = 50 Hz t = 20 ms 90 F = 60 Hz t = 16.7 ms 95 tp = 10 ms 54 Tj = 150 °C 600 Tj = 125 °C 800 Non repetitive surge peak off-state voltage tp = 10 ms 900 V dl/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 100 A/µs IGM Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature soldering during 10 s 260 °C IT(RMS) ITSM I2t Parameter On-state RMS current (full sine wave) Non repetitive surge peak on-state current (Tj initial = 25 °C) I2t value for fusing, (Tj initial = 25 °C) VDRM/VRRM Repetitive surge peak off-state voltage VDSM/VRSM PG(AV) Tstg tp = 20 µs Average gate power dissipation A A2s V Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test conditions Value Min. 0.5 Max. 10 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 15 mA IGT(1) VD = 12 V, RL = 30 Ω I - II - III VGT VD = 12 V, RL = 30 Ω VGD VD = VDRM, RL = 3.3 kΩ , Tj = 150 °C (1) IH IL dV/dt(1) IT = 500 mA IG = 1.2 x IGT I - III II VD = VR = 536 V, gate open Tj = 125 °C VD = VR = 402 V, gate open Tj = 150 °C (dV/dt)c = 0.1 V/μs (dI/dt)c(1) (dV/dt)c = 10 V/μs Unit Max. Min. Tj = 125 °C Tj = 150 °C Tj = 125 °C Tj = 150 °C 20 25 250 170 mA mA V/µs 11.7 Min. 8.2 6.0 A/ms 2.7 1. For both polarities of A2 referenced to A1 DS10320 - Rev 2 page 2/11 T1210T-8T Characteristics Table 3. Static characteristics Symbol VT(1) Test conditions Value Unit ITM = 17 A, tp = 380 µs Tj = 25 °C Max. 1.55 VTO Threshold voltage Tj = 150 °C Max. 0.85 Rd(1) Dynamic resistance Tj = 150 °C Max. 37 mΩ 7.5 µA (1) IDRM, IRRM Tj = 25 °C VD = VR = 800 V Tj = 125 °C VD = VR = 600 V Tj = 150 °C V Max. Max. 1.0 2.7 mA 1. For both polarities of A2 referenced to A1 Table 4. Thermal parameters Symbol DS10320 - Rev 2 Parameter Value Unit Rth(j-c) Junction to case (AC) 1.3 °C/W Rth(j-a) Junction to ambient 60 °C/W page 3/11 T1210T-8T Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current IT(RMS)(A) P(W) 16 14 α = 180° 14 Figure 2. On-state RMS current versus case temperature 12 10 10 8 8 6 6 4 180 ° 4 2 α 2 0 α = 180° 12 α 0 2 4 IT(RMS)(A) 6 8 10 0 25 50 75 100 125 150 12 Figure 3. On-state RMS current versus ambient temperature (free air convection) 3.0 Tc(°C) 0 IT(RMS)(A) Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Z / R ] th th Zth(j-c) 2.5 Zth(j-a) 2.0 1.5 1.0E-01 1.0 0.5 Ta(°C) tP(s) 0.0 0 25 50 75 100 125 150 Figure 5. Relative variation of gate trigger voltage and current versus junction temperature (typical values) 3.0 1.0E-02 1.0E-03 I GT 2.0 Q3 IH, IL [ Tj ] / IH, IL [ Tj = 25 °C] 1.5 2.0 IGT Q1-Q2 1.5 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 Figure 6. Relative variation of holding current and latching current versus junction temperature (typical values) IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] 2.5 1.0E-02 VGT 1.0 I 1.0 L 0.5 0.5 Tj(°C) -50 -25 DS10320 - Rev 2 0 25 50 I Tj(°C) 0.0 75 100 125 150 H 0.0 -50 -25 0 25 50 75 100 125 150 page 4/11 T1210T-8T Characteristics (curves) Figure 7. Surge peak on-state current versus number of cycles Figure 8. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms ITSM(A) 100 90 1000 Non repetitive Tj initial = 25 °C 80 ITSM(A) Tj initial = 25 °C 20 ms 70 dl/dt limitation: 100 A/µs One cycle 60 ITSM 50 100 40 30 Repetitive Tc = 131 °C 20 10 0 Number of cycles 1 10 100 1000 Figure 9. On-state characteristics (maximum values) 100 Tp(ms) 10 0.01 0.10 1.00 10.00 Figure 10. Relative variation of critical rate of decrease of main voltage versus junction temperature ITM(A) 8 (dI/dt)c[Tj] / (dI/dt)c[Tj = 150 °C] (dV/dt)c = 10 V/µs 7 Tj max: V = 0.85 V to R = 37 mΩ d 6 5 10 4 3 2 Tj = 150 °C 1 0.0 0.5 Tj = 25 °C 1.0 1.5 2.0 VTM(V) 2.5 3.0 3.5 1 Figure 11. Relative variation of static dV/dt immunity versus junction temperature (maximum values) 3 0 25 4.0 (dI/dt)c [ (dV/dt)c ] / specified (dI/dt)c Tj(°C) 50 75 100 150 Figure 12. Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values) 5 dV/dt [Tj] / dV/dt [Tj= 150 °C] VD = VR = 402 V; 150 (°C) VD = VR = 536 V; 125 (°C) 4 2 125 3 Tj = 150 (°C) 2 1 Tj = 125 (°C) 1 Tj (°C) (dV/dt)c (V/µs) 0 0.1 DS10320 - Rev 2 0 1.0 10.0 100.0 25 50 75 100 125 150 page 5/11 T1210T-8T Characteristics (curves) Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage IDRM, IRRM [ Tj; VDRM, VRRM] / IDRM, IRRM 1.0E+00 V =V = 800 V DRM RRM 1.0E-01 V DRM =V = 600 V RRM 1.0E-02 V DRM 1.0E-03 DS10320 - Rev 2 25 50 75 RRM = 400 V [T = 125 °C; 800 V] j [T = 150 °C; 600 V] j Tj (°C) 1.0E-04 =V 100 125 150 page 6/11 T1210T-8T Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-220AB package information • • • Epoxy resin is halogen free and meets UL94 flammability standard, level V0 Lead-free plating package leads Recommended torque: 0.4 to 0.6 N·m Figure 14. TO-220AB package outline DS10320 - Rev 2 page 7/11 T1210T-8T TO-220AB package information Table 5. TO-220AB package mechanical data Dimensions Ref. Millimeters Min. A Typ. 15.20 a1 Inches Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 1. Inch dimensions are for reference only. DS10320 - Rev 2 page 8/11 T1210T-8T Ordering information 3 Ordering information Figure 15. Ordering information scheme T 12 10 T - 8 T Triac Current 12 = 12 A Gate sensitivity 10 = 10 mA Specific application T = Increased (dI/dt) and dV/dt producing reduced ITSM Voltage 8 = 800 V Package T = TO-220AB Table 6. Ordering information DS10320 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode T1210T-8T T1210T-8T TO-220AB 2.0 g 50 Tube page 9/11 T1210T-8T Revision history Table 7. Document revision history DS10320 - Rev 2 Date Version Changes 07-Nov-2014 1 Initial release. 18-Sep-2019 2 Updated Figure 14 and Table 5. page 10/11 T1210T-8T IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS10320 - Rev 2 page 11/11