T1235H-600G

® T1235H Series 12A TRIACS SNUBBERLESS™ HIGH TEMPERATURE MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 12 600 35 Unit A V G A2 A1 A2 mA A1 A2 G A2 DESCRIPTION Specifically designed for use in high temperature environment (found in hot appliances such as cookers, ovens, hobs, electric heaters, coffee machines...), the new 12 Amps T1235H triacs provide an enhanced performance in terms of power loss and thermal dissipation. This allows for optimization of the heatsinking dimensioning, leading to space and cost effectivness when compared to electro-mechnical solutions. Based on ST snubberless technology, they offer high commutation switching capabilities and high noise immunity levels. And, thanks to their clip assembly technique, they provide a superior performance in surge current handling. ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns A1 A2 G D2PAK (T1235-G) TO-220AB (T1235-T) Value Tc = 135°C F = 60 Hz F = 50 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 µs Tj = 150°C Tj = 25°C Tj = 150°C Tj = 150°C t = 16.7 ms t = 20 ms 12 145 140 112 50 700 4 1 - 40 to + 150 - 40 to + 150 Unit A A I ²t dI/dt A² s A/µs V A W °C VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range April 2002 - Ed: 5A 1/7 T1235H Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) VGT VGD IH (2) IL dV/dt (2) (dI/dt)c (2) VD = 12 V VD = VDRM IT = 100 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 150°C Without snubber Tj = 150°C I - III II MIN. MIN. Test Conditions RL = 33 Ω RL = 3.3 kΩ Tj = 150°C Quadrant I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. Value 35 1.3 0.15 35 50 80 300 5.3 V/µs A/ms Unit mA V V mA mA STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM ITM = 17 A tp = 380 µs Test Conditions Tj = 25°C Tj = 150°C Tj = 150°C Tj = 25°C Tj = 150°C VD/VR = 400 V (at mains peak voltage) Tj = 150°C MAX. MAX. MAX. MAX. Value 1.5 0.80 25 5 5.5 3.5 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM Note 1: minimum IGT is guaranted at 10% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient S = 1 cm² Parameter D²PAK TO-220AB D²PAK TO-220AB S: Copper surface under tab Value 1.2 45 60 Unit °C/W °C/W PRODUCT SELECTOR Part Number T1235H-600G T1235H-600T Voltage 600 V 600 V Sensitivity 35 mA 35 mA Type Snubberless Snubberless Package D²PAK TO-220AB 2/7 T1235H Series ORDERING INFORMATION T 12 35 TRIAC SERIES CURRENT: 12A H - 600 G PACKAGE: G: D2PAK T: TO-220AB VOLTAGE: 600: 600V (-TR) HIGH TEMPERATURE SENSITIVITY: 35: 35mA PACKING MODE: Blank: Tube (D2PAK) Blank: Bulk (TO-220AB) RG: Tube (TO-220AB) 2 -TR: Tape & Reel (D PAK) OTHER INFORMATION Part Number T1235H-600G T1235H-600G-TR T1235H-600T T1235H-600TRG Marking T1235H600G T1235H600G T1235H600T T1235H-600T Weight 1.5 g 1.5 g 2.3 g 2.3 g Base quantity 50 1000 250 50 Packing mode Tube Tape & reel Bulk Tube Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). P(W) Fig. 2-1: RMS on-state current versus case temperature (full cycle). IT(RMS)(A) 14 12 10 8 6 4 14 12 10 8 6 4 2 0 IT(RMS)(A) 0 2 4 6 8 10 12 2 0 0 25 50 Tc(°C) 75 100 125 150 Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35 µm), full cycle. IT(RMS)(A) D2PAK (S=1cm2) Fig. 3: Relative variation of thermal impedance versus pulse duration. 5 4 3 K=[Zth/Rth] 1.00 Zth(j-c) 0.10 Zth(j-a) 2 1 Tamb(°C) 0 0 25 50 75 100 125 150 0.01 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 3/7 T1235H Series Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C] 2.5 2.0 1.5 IH & IL IGT Fig. 5: Surge peak on-state current versus number of cycles. ITSM(A) 150 125 100 75 50 Repetitive Tc=135°C Non repetitive Tj initial=25°C t=20ms One cycle 1.0 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 160 25 Number of cycles 0 1 10 100 1000 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM(A),I²t(A²s) 2000 1000 dI/dt limitation: 50A/µs Fig. 7: values). On-state characteristics (maximum ITM(A) 200 Tj initial=25°C 100 Tj max. Vto = 0.80 V Rd = 25 mΩ Tj max. ITSM 10 Tj=25°C tp(ms) 100 0.01 0.10 1.00 I²t VTM(V) 10.00 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 8: Relative variation of critical rate of decrease of main current versus junction temperature (typical values). (dI/dt)c [Tj] / (dI/dt)c [Tj=150°C] 8 7 6 5 4 3 2 1 0 25 50 75 Fig. 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 6.0 5.0 4.0 3.0 2.0 1.0 Tj(°C) 100 125 150 0.0 0.1 1.0 (dV/dt)c (V/µs) 10.0 100.0 4/7 T1235H Series Fig. 10: Leakage current versus junction temperature for different values of blocking voltage (typical values). IDRM/IRRM(mA) 1E+1 VD=VR=600V Fig. 11: Acceptable repetitive peak off-state voltage versus case-ambient thermal resistance. VDRM/VRRM(V) 700 600 500 VD=VR=400V Tj=150°C Rth(j-c)=1.2°C/W 1E+0 1E-1 1E-2 Tj(°C) 1E-3 50 75 100 125 150 400 VD=VR=200V 300 200 100 0 0 2 4 6 Rth(c-a)(°C/W) 8 10 12 14 16 18 20 Fig. 12: D²PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm). Rth(j-a) (°C/W) D²PAK 80 70 60 50 40 30 20 10 0 S(cm²) 0 4 8 12 16 20 24 28 32 36 40 5/7 T1235H Series PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B C REF. Millimeters Min. Typ. 3.75 Max. Min. Inches Typ. 0.147 Max. 0.625 b2 L F I A l4 a1 c2 l3 l2 a2 b1 e M c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M 15.20 15.90 0.598 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 6/7 T1235H Series PACKAGE MECHANICAL DATA D²PAK (Plastic) DIMENSIONS A E L2 C2 REF. Millimeters Min. Typ. Max. 4.60 2.69 0.23 0.93 Min. Inches Typ. Max. D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R A A1 A2 B B2 C C2 D E G L L2 L3 R V2 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0° 1.40 0.40 0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8° 0° 8° FOOTPRINT DIMENSIONS (in millimeters) D²PAK (Plastic) 16.90 10.30 1.30 5.08 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7